Image sensor including grooves

ABSTRACT

The present technology relates to techniques of preventing intrusion of moisture into a chip. 
     Various illustrative embodiments include image sensors that include: a substrate; a plurality of layers stacked on the substrate; the plurality of layers including a photodiode layer having a plurality of photodiodes formed on a surface of the photodiode layer; the plurality of layers including at least one layer having a groove formed such that a portion of the at least one layer is excavated; and a transparent resin layer formed above the photodiode layer and formed in the groove. The present technology can be applied to, for example, an image sensor.

CROSS REFERENCE TO RELATED APPLICATIONS

The present application is a continuation of U.S. patent applicationSer. No. 16/045,973 filed Jul. 26, 2018 which is a continuation of U.S.patent application Ser. No. 15/476,629, filed Mar. 31, 2017, now U.S.Pat. No. 10,038,021, which is a continuation of U.S. patent applicationSer. No. 15/111,003, filed Jul. 12, 2016, now U.S. Pat. No. 9,991,301,which is a national stage application under 35 U.S.C. 371 and claims thebenefit of PCT Application No. PCT/JP2015/000329 having an internationalfiling date of Jan. 26, 2015, which designated the United States, whichPCT application claimed the benefit of Japanese Patent Application No.2014-012628 filed Jan. 27, 2014, and Japanese Patent Application No.2014-258939 filed Dec. 22, 2014, the entire disclosures of which arehereby incorporated herein by reference in their entirety.

TECHNICAL FIELD

The present technology relates to an image sensor, a manufacturingapparatus, and a manufacturing method. More particularly, the presenttechnology relates to an image sensor, a manufacturing apparatus, and amanufacturing method, which are capable of improving moisture-proofperformance.

BACKGROUND ART

In recent years, imaging devices in which a plurality of charge coupleddevice (CCD) sensors or a plurality of complementary metal-oxidesemiconductor (CMOS) sensors are arranged in a two-dimensional form havebeen used in digital video cameras, digital still cameras, or the like.

In a CMOS image sensor, a global shutter structure with a structure oftemporarily holding signals in a memory is employed as one of methods ofimplementing simultaneous charge accumulation. The global shutterstructure is configured such that a memory is arranged in a pixel,charges accumulated in light receiving units are collectivelytransferred to memories in all pixels, and the charges are held until aread operation is performed in units of rows, so that all pixels havethe same light exposure time (see Patent Literatures 1 and 2).

CITATION LIST Patent Literature

PTL 1: JP 2012-129797 A

PTL 2: JP 2013-21533 A

SUMMARY OF INVENTION Technical Problem

Meanwhile, the image sensor is manufactured such that a plurality ofimage sensors are formed on a substrate and diced along the time ofmanufacturing. At the time of dicing, film peeling, a crack, or the likeis likely to occur. Further, when film peeling, a crack, or the likeoccur, moisture intrudes into the image sensor, condensation occurs, andthus image quality deterioration is likely to occur.

It is desirable to maintain and improve moisture-proof performance whenor after an image sensor is manufactured.

The present technology was made in light of the foregoing, and it isdesirable to improve the moisture-proof performance.

Solution to Problem

Various illustrative embodiments include image sensors that include: asubstrate; a plurality of layers stacked on the substrate; the pluralityof layers including a photodiode layer having a plurality of photodiodesformed on a surface of the photodiode layer; the plurality of layersincluding at least one layer having a groove formed such that a portionof the at least one layer is excavated; and a transparent resin layerformed above the photodiode layer and formed in the groove.

Additional illustrative embodiments include image sensors that include:a plurality of layers that are stacked; the plurality of layersincluding a photodiode layer having a plurality of photodiodes formed ona surface of the photodiode layer; a transparent resin layer formedabove the photodiode layer; a rib formed in the transparent resin layer;and a moisture resistant film formed between a bottom surface of the riband the transparent resin.

Further illustrative embodiments include imaging devices that include animage sensor and support circuits, the image sensor including: asubstrate; a plurality of layers stacked on the substrate; the pluralityof layers including a photodiode layer having a plurality of photodiodesformed on a surface of the photodiode layer; the plurality of layersincluding at least one layer having a groove formed such that a portionof the at least one layer is excavated; and a transparent resin layerformed above the photodiode layer and formed in the groove.

A first image sensor according to an embodiment of the presenttechnology includes a substrate on which a plurality of layers arestacked, the plurality of layers including a layer in which a pluralityof photodiodes are formed on a surface and a groove formed such that atleast one or more layers are excavated in a direction vertical to thesurface.

A transparent resin layer may be formed on a layer above the layer inwhich the photodiodes are formed, and the transparent resin layer may beformed in the groove.

The groove may be a part of a groove that is formed in a region to bescribed to have a width larger than a width of a blade used at the timeof scribing at a point in time before the scribing. The groove may beformed such that up to a part of a silicon substrate in which thephotodiodes are formed is excavated. The groove may be formed such thatup to a part of a support substrate among the plurality of layers isexcavated.

A passivation film may be formed in the groove. The passivation film maybe formed even on a microlens layer formed above the layer in which thephotodiodes are formed.

A rib may be formed in the transparent resin layer.

A passivation film may be formed in the groove and the rib.

The groove may be formed by two processes of a process of forming afirst through electrode and a process of forming a second throughelectrode. The groove may be filled with a material for forming thesecond through electrode in the process of forming the second throughelectrode.

A transparent resin layer may be formed on a layer above the layer inwhich the photodiodes are formed, a plate-like transparent member may bestacked on the transparent resin layer, the groove may be formed suchthat at least the transparent member layer is excavated, and a moistureresistant film may be formed in the groove.

A transparent resin layer may be formed on a layer above the layer inwhich the photodiodes are formed, a plate-like transparent member may bestacked on the transparent resin layer, the groove may be extended up toa bottom surface of the substrate, a side surface of the groove may becovered with the transparent member, and the transparent resin layer maybe formed between the transparent member and a side surface of thesubstrate.

A hydrophobic film may be formed in the groove.

A second image sensor according to an embodiment of the presenttechnology includes a plurality of layers being stacked and including alayer in which a plurality of photodiodes are formed on a surface, atransparent resin layer formed on a layer above the layer in which thephotodiodes are formed, a rib formed in the transparent resin layer, anda moisture resistant film formed between a bottom surface of the rib andthe transparent resin.

A plate-like transparent member may be stacked on the transparent resinlayer, and the moisture resistant film may be formed even between theplate-like transparent member and the transparent resin.

The moisture resistant film may be a stacked film in which a pluralityof films having different refractive indices are stacked.

The rib may be made of a material absorbing certain light.

Still further embodiments include methods that include forming aplurality of layers stacked on a substrate, the plurality of layersincluding a photodiode layer having a plurality of photodiodes formed ona surface of the photodiode layer; forming a groove in at least onelayer in the plurality of layers, the groove being formed such that theat least one layer is excavated; and a transparent resin layer formedabove the photodiode layer and formed in the groove.

An additional manufacturing apparatus according to embodiments of thepresent technology manufactures an image sensor including a substrate onwhich a plurality of layers are stacked, the plurality of layersincluding a layer in which a plurality of photodiodes are formed on asurface and a groove formed such that at least one or more layers areexcavated in a direction vertical to the surface.

A manufacturing method according to an embodiment of the presenttechnology includes steps of manufacturing a substrate on which aplurality of layers are stacked, the plurality of layers including alayer in which a plurality of photodiodes are formed on a surface andmanufacturing a groove formed such that at least one or more layers areexcavated in a direction vertical to the surface.

In the first image sensor according to an embodiment of the presenttechnology, a groove is formed such that at least one or more layers areexcavated in a direction vertical to a substrate on which a plurality oflayers are stacked, the plurality of layers including a layer in which aplurality of photodiodes are formed on a surface.

In the second image sensor according to an embodiment of the presenttechnology, a plurality of layers including a layer in which a pluralityof photodiodes are formed on a surface are stacked, a transparent resinlayer is formed on a layer above the layer in which the photodiodes areformed, a rib formed in the transparent resin layer, and a moistureresistant film is formed between a bottom surface of the rib and thetransparent resin.

In the manufacturing apparatus and the manufacturing method according toan embodiment of the present technology, an image sensor in which agroove is formed such that at least one or more layers are excavated ina direction vertical to a substrate on which a plurality of layers arestacked, the plurality of layers including a layer in which a pluralityof photodiodes are formed on a surface is manufactured.

Advantageous Effects of Invention

According to an embodiment of the present technology, it is possible toimprove moisture-proof performance of an image sensor or the like.

The effects of the present technology are not necessarily limited to theeffect described herein and may include effects described in the presentdisclosure.

BRIEF DESCRIPTION OF DRAWINGS

FIG. 1 is a block diagram illustrating an exemplary configuration of aCMOS image sensor.

FIG. 2 is a diagram illustrating a configuration of a unit pixel.

FIG. 3 is a diagram illustrating a configuration of a unit pixel.

FIG. 4 is a diagram illustrating a configuration of a chip according toa first embodiment.

FIG. 5 is a diagram illustrating a configuration of a chip according tothe first embodiment.

FIG. 6 is a diagram illustrating a configuration of a chip according tothe first embodiment.

FIG. 7 is a diagram illustrating a configuration of a chip according tothe first embodiment.

FIG. 8 is a diagram illustrating a configuration of a chip according tothe first embodiment.

FIG. 9 is a diagram illustrating a configuration of a chip according tothe first embodiment.

FIG. 10 is a diagram illustrating a configuration of a chip according tothe first embodiment.

FIG. 11 is a diagram illustrating a configuration of a chip according tothe first embodiment.

FIG. 12 is a diagram illustrating a configuration of a chip according tothe first embodiment.

FIG. 13 is a diagram illustrating a configuration of a chip according tothe first embodiment.

FIG. 14 is a diagram illustrating a configuration of a chip according tothe first embodiment.

FIG. 15 is a diagram for describing a process of manufacturing a chipaccording to the first embodiment.

FIG. 16 is a diagram illustrating a configuration of a chip according toa second embodiment.

FIG. 17 is a diagram illustrating a configuration of a chip according tothe second embodiment.

FIG. 18 is a diagram illustrating a configuration of a chip according tothe second embodiment.

FIG. 19 is a diagram illustrating a configuration of a chip according tothe second embodiment.

FIG. 20 is a diagram illustrating a configuration of a chip according tothe second embodiment.

FIG. 21 is a diagram illustrating a configuration of a chip according tothe second embodiment.

FIG. 22 is a diagram illustrating a configuration of a chip according tothe second embodiment.

FIG. 23 is a diagram illustrating a configuration of a chip according tothe second embodiment.

FIG. 24 is a diagram illustrating a configuration of a chip according tothe second embodiment.

FIG. 25 is a diagram illustrating a configuration of a chip according tothe second embodiment.

FIG. 26 is a diagram for describing a process of manufacturing a chipaccording to the second embodiment.

FIG. 27 is a diagram illustrating a configuration of a chip according toa third embodiment.

FIG. 28 is a diagram illustrating a configuration of a chip according tothe third embodiment.

FIG. 29 is a diagram illustrating a configuration of a chip according tothe third embodiment.

FIG. 30 is a diagram illustrating a configuration of a chip according tothe third embodiment.

FIG. 31 is a diagram illustrating a configuration of a chip according tothe third embodiment.

FIG. 32 is a diagram illustrating a configuration of a chip according tothe third embodiment.

FIG. 33 is a diagram illustrating a configuration of a chip according tothe third embodiment.

FIGS. 34A and 34B are diagrams illustrating a configuration of a chipaccording to the third embodiment.

FIG. 35 is a diagram for describing a process of manufacturing a chipaccording to the third embodiment.

FIG. 36 is a diagram for describing a process of manufacturing a chipaccording to the third embodiment.

FIG. 37 is a diagram illustrating a configuration of a chip according toa fourth embodiment.

FIG. 38 is a diagram illustrating a configuration of a chip according tothe fourth embodiment.

FIG. 39 is a diagram for describing a process of manufacturing a chipaccording to the fourth embodiment.

FIG. 40 is a diagram for describing a process of manufacturing a chipaccording to the fourth embodiment.

FIG. 41 is a diagram for describing a process of manufacturing a chipaccording to the fourth embodiment.

FIG. 42 is a diagram for describing a process of manufacturing a chipaccording to the fourth embodiment.

FIG. 43 is a diagram for describing a process of manufacturing a chipaccording to the fourth embodiment.

FIG. 44 is a diagram for describing a process of manufacturing a chipaccording to the fourth embodiment.

FIG. 45 is a diagram illustrating a configuration of a chip according toa fifth embodiment.

FIG. 46 is a diagram illustrating a configuration of a chip according tothe fifth embodiment.

FIG. 47 is a diagram illustrating a configuration of a chip according tothe fifth embodiment.

FIG. 48 is a diagram for describing a process of manufacturing a chipaccording to the fifth embodiment.

FIG. 49 is a diagram illustrating a configuration of a chip according tothe fifth embodiment.

FIG. 50 is a diagram illustrating a configuration of a chip according tothe fifth embodiment.

FIG. 51 is a diagram illustrating a configuration of a chip according tothe fifth embodiment.

FIG. 52 is a diagram for describing a process of manufacturing a chipaccording to the fifth embodiment.

FIG. 53 is a diagram illustrating a configuration of a chip according toa sixth embodiment.

FIG. 54 is a diagram illustrating a configuration of a chip according tothe sixth embodiment.

FIG. 55 is a diagram for describing a process of manufacturing a chipaccording to the sixth embodiment.

FIG. 56 is a diagram illustrating a configuration of a chip according tothe sixth embodiment.

FIG. 57 is a diagram illustrating a configuration of a chip according tothe sixth embodiment.

FIG. 58 is a diagram for describing a process of manufacturing a chipaccording to the sixth embodiment.

FIG. 59 is a diagram illustrating a configuration of a chip according tothe sixth embodiment.

FIG. 60 is a diagram illustrating a configuration of a chip according tothe sixth embodiment.

FIG. 61 is a diagram for describing a process of manufacturing a chipaccording to the sixth embodiment.

FIG. 62 is a diagram illustrating a configuration of a chip according toa seventh embodiment.

FIG. 63 is a diagram illustrating a configuration of a chip according tothe seventh embodiment.

FIG. 64 is a diagram for describing a process of manufacturing a chipaccording to the seventh embodiment.

FIG. 65 is a diagram illustrating a configuration of a chip according tothe seventh embodiment.

FIG. 66 is a diagram illustrating a configuration of a chip according tothe seventh embodiment.

FIG. 67 is a diagram for describing a process of manufacturing a chipaccording to the seventh embodiment.

FIG. 68 is a diagram illustrating a configuration of a chip according tothe seventh embodiment.

FIG. 69 is a diagram illustrating a configuration of a chip according tothe seventh embodiment.

FIG. 70 is a diagram illustrating a configuration of a chip according tothe seventh embodiment.

FIG. 71 is a diagram illustrating a configuration of a chip according tothe seventh embodiment.

FIG. 72 is a diagram illustrating a configuration of a chip according tothe seventh embodiment.

FIG. 73 is a diagram illustrating a configuration of a chip according tothe seventh embodiment.

FIG. 74 is a diagram illustrating a configuration of a chip according tothe seventh embodiment.

FIG. 75 is a diagram illustrating a configuration of a chip according tothe seventh embodiment.

FIG. 76 is a diagram illustrating a configuration of a chip according tothe seventh embodiment.

FIG. 77 is a diagram illustrating a configuration of a chip according tothe seventh embodiment.

FIG. 78 is a diagram illustrating a configuration of a chip according tothe seventh embodiment.

FIG. 79 is a diagram illustrating a configuration of a chip according tothe seventh embodiment.

FIG. 80 is a diagram illustrating a configuration of a chip according tothe seventh embodiment.

FIG. 81 is a diagram illustrating a configuration of a chip according tothe seventh embodiment.

FIG. 82 is a diagram illustrating a configuration of a chip according tothe seventh embodiment.

FIG. 83 is a diagram illustrating a configuration of a chip according tothe seventh embodiment.

FIG. 84 is a diagram illustrating a configuration of a chip according tothe seventh embodiment.

FIG. 85 is a diagram illustrating a configuration of a chip according tothe seventh embodiment.

FIG. 86 is a diagram illustrating a configuration of a chip according tothe seventh embodiment.

FIG. 87 is a diagram illustrating a configuration of a chip according tothe seventh embodiment.

FIG. 88 is a diagram illustrating a configuration of a chip according tothe seventh embodiment.

FIG. 89 is a diagram illustrating a configuration of a chip according tothe seventh embodiment.

FIG. 90 is a diagram illustrating a configuration of a chip according tothe seventh embodiment.

FIG. 91 is a diagram illustrating a configuration of a chip according tothe seventh embodiment.

FIG. 92 is a diagram illustrating a configuration of a chip according tothe seventh embodiment.

FIG. 93 is a diagram illustrating a configuration of a chip according tothe seventh embodiment.

FIG. 94 is a diagram illustrating a configuration of a chip according tothe seventh embodiment.

FIG. 95 is a diagram illustrating a configuration of a chip according tothe seventh embodiment.

FIG. 96 is a diagram illustrating a configuration of a chip according tothe seventh embodiment.

FIG. 97 is a diagram illustrating a configuration of a chip according tothe seventh embodiment.

FIG. 98 is a diagram illustrating a configuration of a chip according tothe seventh embodiment.

FIG. 99 is a diagram illustrating a configuration of a chip according tothe seventh embodiment.

FIG. 100 is a diagram illustrating a configuration of a chip accordingto the seventh embodiment.

FIG. 101 is a diagram illustrating a configuration of a chip accordingto the seventh embodiment.

FIG. 102 is a diagram illustrating a configuration of a chip accordingto the seventh embodiment.

FIG. 103 is a diagram illustrating a configuration of a chip accordingto the seventh embodiment.

FIG. 104 is a diagram illustrating a configuration of a chip accordingto the seventh embodiment.

FIG. 105 is a diagram illustrating a configuration of a chip accordingto an eighth embodiment.

FIG. 106 is a diagram illustrating a configuration of a chip accordingto the eighth embodiment.

FIG. 107 is a diagram for describing a process of manufacturing a chipaccording to the eighth embodiment.

FIG. 108 is a diagram illustrating a configuration of an electronicdevice.

DESCRIPTION OF EMBODIMENTS

Hereinafter, modes (hereinafter, referred to as “embodiments”) forcarrying out the present technology will be described. The descriptionwill proceed in the following order.

1. Configuration of solid-state image sensor

2. Structure of chip

3. First Embodiment

4. Second Embodiment

5. Third Embodiment

6. Fourth Embodiment

7. Fifth Embodiment

8. Sixth Embodiment

9. Seventh Embodiment

10. Eighth Embodiment

11. Electronic device

<Configuration of Solid-State Image Sensor>

FIG. 1 is a block diagram illustrating an exemplary configuration of aCMOS (Complementary Metal Oxide Semiconductor) image sensor as asolid-state image sensor according to an embodiment of the presenttechnology.

A CMOS image sensor 30 includes a pixel array unit 41, a verticaldriving unit 42, a column processing unit 43, a horizontal driving unit44, and a system control unit 45. The pixel array unit 41, the verticaldriving unit 42, the column processing unit 43, the horizontal drivingunit 44, and the system control unit 45 are formed on a semiconductorsubstrate (chip) (not illustrated).

In the pixel array unit 41, unit pixels each of which includes aphotoelectric conversion element that generates and accumulates lightcharges of a charge amount corresponding to a quantity of incident lightherein are two-dimensionally arranged in a matrix form. Hereinafter,light charges of a charge amount according to a quantity of incidentlight are also referred to as simply as “charges,” and a unit pixel isalso referred to as a “pixel.”

Further, in the pixel array unit 41, in the pixel array of the matrixform, a pixel driving line 46 is formed for each row in a horizontaldirection (a direction in which a row of pixels are arranged) in FIG. 1,and a vertical signal line 47 is formed for each column in a verticaldirection (a direction in which a column of pixels are arranged) inFIG. 1. One end of the pixel driving line 46 is connected to an outputterminal corresponding to each row of the vertical driving unit 42.

The CMOS image sensor 30 further includes a signal processing unit 48and a data storage unit 49. The signal processing unit 48 and the datastorage unit 49 may be implemented by an external signal processing unitsuch as a digital signal processor (DSP) formed on a substrate differentfrom the CMOS image sensor 30 or software, and may be mounted on thesame substrate as the CMOS image sensor 30.

The vertical driving unit 42 is a pixel driving unit that is configuredwith a shift register, an address decoder, or the like, and drives thepixels of the pixel array unit 41 at the same time or in units of rows.Although a concrete configuration is not illustrated, the verticaldriving unit 42 is configured to include a read scanning system and adischarge scanning system or collective discharge and collectivetransfer.

The read scanning system selectively scans the unit pixels of the pixelarray unit 41 in order in units of rows in order to read signals fromthe unit pixels. In the case of row driving (a rolling shutteroperation), for discharging, discharge scanning is performed on readingrows on which read scanning is performed by the read scanning systemprior to read scanning by a time of a shutter speed. Further, in thecase of global exposure (a global shutter operation), collectivedischarge is performed prior to collective transfer by a time of ashutter speed.

Through the discharging, unnecessary charges are discharged (reset) fromphotoelectric conversion elements of unit pixels in reading rows.Further, a so-called electronic shutter operation is performed bydischarging (resetting) of unnecessary charges. Here, the electronicshutter operation refers to an operation for discarding light charges ofthe photoelectric conversion elements and newly starting light exposure(starting light charge accumulation).

A signal read by a read operation performed by the read scanning systemcorresponds to a quantity of light incident after an immediatelyprevious read operation or electronic shutter operation. In the case ofrow driving, a period of time from a read timing by an immediatelyprevious read operation or a discharge timing by the electronic shutteroperation to a read timing by a current read operation is anaccumulation period of time (an exposure period of time) of lightcharges in the unit pixels. In the case of global exposure, a period oftime from the collective discharge to collective transfer is anaccumulation period of time (an exposure period of time).

Pixel signals output from the unit pixels of the pixel row selectivelyscanned by the vertical driving unit 42 are supplied to the columnprocessing unit 43 through each of the vertical signal lines 47. Thecolumn processing unit 43 performs certain signal processing on thepixel signals output from the unit pixels of the selected row throughthe vertical signal line 47 for each pixel row of the pixel array unit41, and temporarily holds the pixel signals that have been subjected tosignal processing.

Specifically, the column processing unit 43 performs at least a noisereduction process such as a correlated double sampling (CDS) as signalprocessing. Through the CDS performed by the column processing unit 43,a reset noise or a fixed pattern noise specific to a pixel such as avariation in a threshold value of an amplifying transistor is removed.Further, in addition to the noise reduction process, for example, thecolumn processing unit 43 may have an analog-to-digital (AD) conversionfunction and output a signal level using a digital signal as well.

The horizontal driving unit 44 is configured with a shift register, anaddress decoder, or the like, and sequentially selects unit circuitscorresponding to pixel columns of the column processing unit 43. Throughthe selective scanning by the horizontal driving unit 44, the pixelsignals that have been subjected to signal processing by the columnprocessing unit 43 are sequentially output to the signal processing unit48.

The system control unit 45 is configured with a timing generator thatgenerates various kinds of timing signals or the like, and performsdrive control on the vertical driving unit 42, the column processingunit 43, and the horizontal driving unit 44 based on various kinds oftiming signals generated by the timing generator.

The signal processing unit 48 has at least an addition process function,and performs various kinds of signal processing such as an additionprocess on the pixel signals output from the column processing unit 43.The data storage unit 49 temporarily stores data necessary for signalprocessing when signal processing is performed by the signal processingunit 48.

<Structure of Chip>

Next, a concrete structure of unit pixels arranged in the pixel arrayunit 41 of FIG. 1 in the matrix form will be described. Through a pixelto which the present technology is applied, it is possible to improvethe moisture-proof performance and sensor performance. In order todescribe that there are the above effects, a pixel to which the presenttechnology is not applied is first described before a pixel to which thepresent technology is applied.

FIG. 2 illustrates an exemplary configuration of a chip in which aplurality of unit pixels are arranged. The chip of FIG. 2 configures abackside-illumination type CMOS image sensor before dicing is performed.

A configuration illustrated in FIG. 2 described below is an example, andthe present technology described below can be applied even to any otherconfiguration such as a configuration in which another layer is added inaddition to layers described below or a configuration in which any oneof layers described below is deleted.

In a chip 70 illustrated in FIG. 2, an insulating layer and aninterconnection layer 72 made of metal are arranged on a supportsubstrate 71, and a silicon substrate 73 is arranged on theinterconnection layer 72. The support substrate 71 is made of silicon,glass epoxy, glass, plastic, or the like. In the silicon substrate 73, aplurality of photodiodes 74 (optical elements) serving as photoelectricconversion units of pixels are formed at certain intervals.

A planarization film 75 made of an insulating material is formed on thesilicon substrate 73 and the photodiode 74. In the planarization film75, a light shielding film 76 for preventing light from leaking into aneighboring pixel is performed between the neighboring photodiodes 74.

A color filter layer 77 is formed on the planarization film 75 and thelight shielding film 76. In the color filter layer 77, a plurality ofcolor filters are formed in units of pixels, and, for example, colors ofthe color filters are arranged according to a Bayer array.

A planarization film 78 is formed on the color filter layer 77. Amicrolens layer 79 is formed on the planarization film 78. As describedabove, the microlens layer 79 is formed on the substrate including aplurality of layers having the photodiode 74. In the microlens layer 79,a microlens layer for collecting light onto the photodiode 74 of eachpixel is formed for each pixel. The microlens layer 79 is an inorganicmaterial layer and made of SiN, SiO, or SiOxNy

(here, 0<x≤1, 0<y≤1).

A cover glass 81 is bonded onto the microlens layer 79 through anadhesive layer 80. The cover glass 81 is not limited to glass, and atransparent plate made of resin or the like may be used. The adhesivelayer 80 is made of an acrylic-based resin material, a styrene-basedresin material, an epoxy-based resin material, or the like.

The chip 70 illustrated in FIG. 2 is a state in which there are aplurality of chips. FIG. 2 illustrates a state in which there are threechips in a horizontal direction, and a wafer is not diced yet. In thewafer illustrated in FIG. 2, a chip positioned at the center is referredto as a “chip 70-1,” a chip positioned at the left is referred to as a“chip 70-2,” and a chip positioned at the right is referred to as a“chip 70-3.”

There is a scribe section 91-1 between the chip 70-1 and the chip 70-2,and there is a scribe section 91-2 between the chip 70-1 and the chip70-3. The three chips illustrated in FIG. 2 are diced into three chipsby dicing along the scribe section 91-1 and the scribe section 91-2.

FIG. 3 illustrates the diced chip 70-1. The chip 70-1 illustrated inFIG. 3 is a chip positioned at the center of the chip illustrated inFIG. 2, and indicates the chip 70-1 obtained as a result of dicing alongthe scribe section 91-1 and the scribe section 91-2.

At the time of dicing, an edge portion is likely to be peeled off byphysical force applied to the chip 70-1 at the time of dicing. Further,after dicing, moisture is likely to intrude into the side of the chip70-1 or the like as illustrated in FIG. 3. For example, a seal resinportion is more likely to absorb moisture than any other portion.Further, moisture is likely to intrude into an interface portion betweenseal resin and glass or the like.

If moisture intrudes into the chip 70-1, depending on the intrusionlocation, a metallic material or a disconnection is likely to corrode,and thus a normal operation may not be performed. Further, an irregularimage or a display defect may occur. Thus, it is necessary to performdicing so that damage such as peeling does not occur at the time ofdicing, or a mechanism of preventing moisture from intruding into thechip 70-1 is necessary.

Hereinafter, a structure and a manufacturing process of suppressing theoccurrence of damage such as peeling at the time of dicing andpreventing moisture from intruding into the chip 70 will be described asfirst to seventh embodiments. Further, in each embodiment, a chipbasically has the configuration illustrated in FIGS. 2 and 3, andportions necessary for describing each embodiment are appropriatelyillustrated and described.

First Embodiment

In a first embodiment, a groove is formed in a certain layer in a chipto prevent damage at the time of dicing and intrusion of moisture into achip.

(1-1)-St Embodiment

FIG. 4 illustrates a configuration of a chip according to the firstembodiment. FIG. 4 illustrates a wafer that includes a plurality ofchips (three chips in FIG. 4) and is not diced yet, similarly to FIG. 2.

Here, a chip positioned at the center is referred to as a “chip 100-1,”a chip positioned at the left is referred to as a “chip 100-2,” and achip positioned at the right is referred to as a “chip 100-3.” In thefollowing description, when the chips 100-1 to 100-3 need not bedistinguished from one another, the chips are referred to as simply a“chip 100.”

Each chip 100 has the same configuration as the chip 70 described abovewith reference to FIGS. 2 and 3. In other words, the chip 100 isconfigured such that an interconnection layer 72 is arranged on asupport substrate 71, and a silicon substrate 73 is arranged on theinterconnection layer 72. In the silicon substrate 73, a plurality ofphotodiodes 74 (optical elements) serving as photoelectric conversionunits of pixels are formed at certain intervals.

The planarization film 75 is formed on the silicon substrate 73, and alight shielding film 76 for preventing light from leaking into aneighboring pixel is formed in a portion of the planarization film 75corresponding to a position between the photodiodes 74. A color filterlayer 77 is formed on the planarization film 75. A planarization film 78is formed on the color filter layer 77. A microlens layer 79 is formedon the planarization film 78. A cover glass 81 is bonded onto themicrolens layer 79 through an adhesive layer 80.

The adhesive layer 80 is made of transparent resin, and is preferably amember capable of fixing the cover glass 81. The cover glass 81 may be aplate-like transparent member instead of glass.

In the wafer illustrated in FIG. 4, a groove 101 is formed between thechips 100. A groove 101-1 is formed between the chip 100-1 and the chip100-2, and the groove 101-2 is formed between the chip 100-1 and thechip 100-3.

There is a scribe section 91-1 between the chip 100-1 and the chip100-2, and the groove 101-1 is formed in the scribe section 91-1.Similarly, there is a scribe section 91-2 between the chip 100-1 and thechip 100-3, and the groove 101-2 is formed in the scribe section 91-2.

In the other drawings subsequent to FIG. 4, in order to help withviewing the groove 101-2, the description will proceed in a state inwhich the scribe section 91-2 is not illustrated.

In the chip 100 illustrated in FIG. 4, the groove 101 is formed suchthat the microlens layer 79, the planarization film 78, the color filterlayer 77, and the planarization film 75 are excavated up to an upperportion of the silicon substrate 73.

As will be described later, at the time of manufacturing, since thegroove 101 is formed before the adhesive layer 80 is formed, and theadhesive layer 80 is formed after the groove 101 is formed, the groove101 is filled with the same material as the adhesive layer 80.Transparent resin may be used as a material for forming the adhesivelayer 80. The groove 101 may be filled with the transparent resin.

When the wafer in which the groove 101 is formed between the chips 100is diced along the scribe section 91, the chip 100-1 illustrated in FIG.5 is cut out. In the chip 100-1 illustrated in FIG. 5, the microlenslayer 79, the planarization film 78, the color filter layer 77, and theplanarization film 75 are surrounded by the adhesive layer 80 and thusnot exposed on the surface.

In other words, the side surfaces of the microlens layer 79, theplanarization film 78, the color filter layer 77, and the planarizationfilm 75 are covered with the same material as the adhesive layer 80.

As described above, the diced chip 100-1 has a structure in which partsof the stacked layers of the chip 100 are covered with the groove 101-1′and the groove 101-2′ (a dash is added to the grooves after dicing inorder to be distinguished from the groove 101-1 and the groove 101-2before dicing illustrated in FIG. 4).

Since the diced chip 100-1 is configured such that the groove 101-1′ andthe groove 101-2′ remain, and the same material as the adhesive layer 80remains in the portions of the groove 101-1′ and the groove 101-2′ asdescribed above, a width of the groove 101-1 or the groove 101-2 betweenthe chips 100 before dicing is preferably larger than a width of a bladeused in the dicing process.

As the dicing is performed in a state in which the groove 101 is formedand filled with the same material as the adhesive layer 80 as describedabove, force applied to an interface between films at the time of dicingcan be mitigated, and a possibility that film peeling or a crack willoccur can be reduced. Further, since film peeling or a crack does notoccur, the moisture-proof performance of the chip can be improved.

The groove 101 (the groove 101′) illustrated in FIGS. 4 and 5 areillustrated to reach up to the upper portion of the silicon substrate73, but may be formed such that the silicon substrate 73 is alsoexcavated. In other words, a groove 111-1 and a groove 111-2 may beformed such that a part of the silicon substrate 73 is excavated asillustrated in FIG. 6.

As the groove 111 is formed as described above, the interface sides ofthe silicon substrate 73 and the planarization film 75 are covered withthe same material as the adhesive layer 80, and thus force applied to aninterface between films at the time of dicing can be mitigated, and apossibility that film peeling or a crack will occur can be reduced.Further, since film peeling or a crack does not occur, themoisture-proof performance of the chip can be improved.

The first embodiment has been described in connection with the examplein which the groove is formed such that up to a part of a neighboringfilm (layer) is excavated as in the chip 110 illustrated in FIG. 6.

(1-2)-Nd Embodiment

FIG. 7 illustrates another configuration of the chip in the firstembodiment. FIG. 7 illustrates a wafer that includes a plurality ofchips (three chips in FIG. 7) and is not diced yet, similarly to FIG. 4.The same parts as in FIG. 4 are denoted by the same reference numerals,and a description thereof is omitted.

In a wafer illustrated in FIG. 7, a chip positioned at the center isreferred to as a “chip 120-1,” a chip positioned at the left is referredto as a “chip 120-2,” and a chip positioned at the right is referred toas a “chip 120-3.”

In the wafer illustrated in FIG. 7, a groove 121 is formed between thechips 120. The groove 121-1 is formed between the chip 120-1 and thechip 120-2, and the groove 121-2 is formed between the chip 120-1 andthe chip 120-3.

There is a scribe section 91-1 between the chip 120-1 and the chip120-2, and the groove 121-1 is formed in the scribe section 91-1.Similarly, there is a scribe section 91-2 between the chip 120-1 and thechip 120-3, and the groove 121-2 is formed in the scribe section 91-2.

A method of forming the groove 121 is the same as in the chip 110described above with reference to FIG. 6. In the chip 120 illustrated inFIG. 7, a space 122-1 and a space 122-2 are further formed. The space122-1 is formed between the chip 120-1 and the chip 120-2, and the space122-2 is formed between the chip 120-1 and the chip 120-3.

The chip 120 illustrated in FIG. 7 has a configuration in which thegroove 121 is formed such that the microlens layer 79, the planarizationfilm 78, the color filter layer 77, the planarization film 75, and apart of the silicon substrate 73 are excavated, and the space 122 isalso formed in the adhesive layer 80.

As described above, the space 122 is formed to penetrate the adhesivelayer 80 from the groove 121. Since the scribe section 91 is cut bydicing, when the scribe section 91 is positioned in the space 122 inadvance, force applied to the layers of the chip 120 at the time ofdicing can be reduced.

The groove 121 and the space 122 are formed, for example, such that thegroove 121 is formed before the adhesive layer 80 is formed, theadhesive layer 80 is formed after the groove 121 is formed, andthereafter the space 122 is formed.

Alternatively, although not illustrated, the groove 121 and the space122 may be formed to be integrated into each other. A configuration inwhich the same material as the adhesive layer 80 does not remain at theside of the groove 121 (the side of the groove 121 such as the colorfilter layer 77) may be provided, and the space 122 may be positioned atthe side of the color filter layer 77 or the like to serve as the groove121.

In this configuration, after up to the adhesive layer 80 is stacked, thespace 122 is formed. In this case, since the space 122 is formed insteadof the groove 121, a process of forming the space 122 may be performedinstead of a process of forming the groove 121.

When the wafer illustrated in FIG. 7 in which the groove 121 and thespace 122 are formed between the chips 120 is diced along the scribesection 91, the chip 120 having almost the same structure as the chip100 illustrated in FIG. 5 is cut out.

In other words, the chip 120 in which the microlens layer 79, theplanarization film 78, the color filter layer 77, the planarization film75, and a part of the silicon substrate 73 are surrounded by theadhesive layer 80 and thus not exposed on the surface is cut out.

As dicing is performed in the state in which the groove 121 and thespace 122 are formed, and the groove 121 is filled with the samematerial as the adhesive layer 80 as described above, force applied toan interface between films at the time of dicing can be mitigated, and apossibility that film peeling or a crack will occur can be reduced.Further, since film peeling or a crack does not occur, themoisture-proof performance of the chip can be improved.

The space 122 may remain as a space or may be filled with a materialhaving high moisture-proof performance or a material different from amaterial for forming the adhesive layer 80.

(1-3)-Rd Embodiment

FIG. 8 illustrates another configuration of the chip in the firstembodiment. FIG. 8 illustrates a wafer that includes a plurality ofchips (three chips in FIG. 8) and is not diced yet, similarly to FIG. 6.The same parts as in FIG. 6 are denoted by the same reference numerals,and a description thereof is omitted.

In a wafer illustrated in FIG. 8, a chip positioned at the center isreferred to as a “chip 130-1,” a chip positioned at the left is referredto as a “chip 130-2,” and a chip positioned at the right is referred toas a “chip 130-3.”

In the wafer illustrated in FIG. 8, a groove 131 is formed between thechips 130. The groove 131-1 is formed between the chip 130-1 and thechip 130-2, and the groove 131-2 is formed between the chip 130-1 andthe chip 130-3.

The chip 130 illustrated in FIG. 8 having the groove 131 is similar tothe chip 110 illustrated in FIG. 6 except that an interconnection layer72 and a support substrate 71 are added in a lower portion of the chip110 illustrated in FIG. 6, and thus a description thereof is omitted. Inother words, the present embodiment can be applied even to the chip 130with a signal processing circuit substrate including the interconnectionlayer 72 and the support substrate 71 as illustrated in FIG. 8.

As dicing is performed in the state in which the groove 131 is formedand filled with the same material as the adhesive layer 80 as describedabove, force applied to an interface between films at the time of dicingcan be mitigated, and a possibility that film peeling or a crack willoccur can be reduced. Further, since film peeling or a crack does notoccur, the moisture-proof performance of the chip can be improved.

Further, the (1-2)-nd embodiment may be applied to the (1-3)-rdembodiment such that the space 122 is formed in the adhesive layer 80and the groove 131. When the space 122 is formed, the space 122 may befilled with transparent resin or a member having high moisture-proofperformance.

(1-4)-Th Embodiment

FIG. 9 illustrates another configuration of the chip in the firstembodiment. FIG. 9 illustrates a wafer that includes a plurality ofchips (three chips in FIG. 9) and is not diced yet, similarly to FIG. 8.The same parts as in FIG. 8 are denoted by the same reference numerals,and a description thereof is omitted.

In a wafer illustrated in FIG. 9, a chip positioned at the center isreferred to as a “chip 140-1,” a chip positioned at the left is referredto as a “chip 140-2,” and a chip positioned at the right is referred toas a “chip 140-3.”

In the wafer illustrated in FIG. 9, a groove 141 is formed between thechips 140. The groove 141-1 is formed between the chip 140-1 and thechip 140-2, and the groove 141-2 is formed between the chip 140-1 andthe chip 140-3.

In the chip 140 illustrated in FIG. 9, similarly to the chip 130illustrated in FIG. 8, a signal processing circuit substrate includingan interconnection layer 72 and a support substrate 71 is stacked, andthe groove 141 is formed up to the signal processing circuit substrate.In the example illustrated in FIG. 9, the groove 141 is formed such thatup to the support substrate 71 is excavated.

In the chip 140 illustrated in FIG. 9, the groove 141 is formed suchthat the microlens layer 79, the planarization film 78, the color filterlayer 77, the planarization film 75, the silicon substrate 73, theinterconnection layer 72, and a part of the support substrate 71 areexcavated.

As will be described later, at the time of manufacturing, the groove 141is formed before the adhesive layer 80, and the adhesive layer 80 isformed after the groove 141 is formed, and thus the groove 141 is filledwith the same adhesive as the adhesive layer 80.

As the wafer in which the groove 141 is formed between the chips 140 isdiced along the scribe section 91, the chip 140-1 illustrated in FIG. 10is cut out. In the chip 140-1 illustrated in FIG. 10, the microlenslayer 79, the planarization film 78, the color filter layer 77, theplanarization film 75, the silicon substrate 73, the interconnectionlayer 72, and a part of the support substrate 71 are surrounded by theadhesive layer 80 and thus not to exposed on the surface.

In other words, the side surfaces of the microlens layer 79, theplanarization film 78, the color filter layer 77, the planarization film75, the silicon substrate 73, the interconnection layer 72, and a partof the support substrate 71 are covered with the same material as theadhesive layer 80. As described above, the diced chip 140-1 has thestructure in which parts of the stacked layers of the chip 140-1 arecovered with the groove 141-1′ and the groove 141-2′.

As dicing is performed in the state in which the groove 141 is formedand filled with the same material as the adhesive layer 80 as describedabove, force applied to an interface between films at the time of dicingcan be mitigated, and a possibility that film peeling or a crack willoccur can be reduced. Further, since film peeling or a crack does notoccur, the moisture-proof performance of the chip can be improved.

The (1-2)-nd embodiment may be applied to the (1-4)-th embodiment, andthe space 122 may be formed in the adhesive layer 80 and the groove 141.When the space 122 is formed, the space 122 may be filled withtransparent resin or a member having high moisture-proof performance.

(1-5)-Th Embodiment

FIG. 11 illustrates another configuration of the chip in the firstembodiment. FIG. 11 illustrates a wafer that includes a plurality ofchips (three chips in FIG. 11) and is not diced yet, similarly to FIG.6. The same parts as in FIG. 6 are denoted by the same referencenumerals, and a description thereof is omitted.

In a wafer illustrated in FIG. 11, a chip positioned at the center isreferred to as a “chip 150-1,” a chip positioned at the left is referredto as a “chip 150-2,” and a chip positioned at the right is referred toas a “chip 150-3.”

In the wafer illustrated in FIG. 11, a groove 151 is formed between thechips 150. The groove 151-1 is formed between the chip 150-1 and thechip 150-2, and the groove 151-2 is formed between the chip 150-1 andthe chip 150-3.

The chip 150 illustrated in FIG. 11 having the groove 151 is similar tothe chip 110 illustrated in FIG. 6 except that a transparent resin layer152 is formed between the adhesive layer 80 and the cover glass 81 ofthe chip 110 illustrated in FIG. 6, and thus a description thereof isomitted.

As dicing is performed in the state in which the groove 151 is formedand filled with the same material as the adhesive layer 80 as describedabove, force applied to an interface between films at the time of dicingcan be mitigated, and a possibility that film peeling or a crack willoccur can be reduced. Further, since film peeling or a crack does notoccur, the moisture-proof performance of the chip can be improved.

Further, the (1-2)-nd embodiment may be applied to the (1-5)-thembodiment such that the space 122 is formed in the adhesive layer 80and the groove 131. When the space 122 is formed, the space 122 may befilled with transparent resin or a member having high moisture-proofperformance.

Further, the (1-3)-rd embodiment or the (1-4)-th embodiment may beapplied to provide a configuration in which the signal processingcircuit substrate including the interconnection layer 72 and the supportsubstrate 71 is stacked.

(1-6)-Th Embodiment

FIG. 12 illustrates another configuration of the chip in the firstembodiment. FIG. 12 illustrates a wafer that includes a plurality ofchips (three chips in FIG. 12) and is not diced yet, similarly to FIG.6. The same parts as in FIG. 6 are denoted by the same referencenumerals, and a description thereof is omitted.

In a wafer illustrated in FIG. 12, a chip positioned at the center isreferred to as a “chip 160-1,” a chip positioned at the left is referredto as a “chip 160-2,” and a chip positioned at the right is referred toas a “chip 160-3.”

In the wafer illustrated in FIG. 11, a groove 161 is formed between thechips 160. The groove 161-1 is formed between the chip 160-1 and thechip 160-2, and the groove 161-2 is formed between the chip 160-1 andthe chip 160-3.

The chip 160 illustrated in FIG. 12 having the groove 161 is similar tothe chip 110 illustrated in FIG. 6 except that an absorbing film 162 isformed between the adhesive layer 80 and the cover glass 81 of the chip110 illustrated in FIG. 6, and thus a description thereof is omitted.The absorbing film 162 is a film made of a material absorbing light of acertain wavelength.

As dicing is performed in the state in which the groove 161 is formedand filled with the same material as the adhesive layer 80 as describedabove, force applied to an interface between films at the time of dicingcan be mitigated, and a possibility that film peeling or a crack willoccur can be reduced. Further, since film peeling or a crack does notoccur, the moisture-proof performance of the chip can be improved.

Further, the (1-2)-nd embodiment may be applied to the (1-6)-thembodiment such that the space 122 is formed in the adhesive layer 80and the groove 131. When the space 122 is formed, the space 122 may befilled with transparent resin or a member having high moisture-proofperformance.

Further, the (1-3)-rd embodiment or the (1-4)-th embodiment may beapplied to provide a configuration in which the signal processingcircuit substrate including the interconnection layer 72 and the supportsubstrate 71 is stacked.

(1-7)-Th Embodiment

FIG. 13 illustrates another configuration of the chip in the firstembodiment. FIG. 13 illustrates a wafer that includes a plurality ofchips (three chips in FIG. 13) and a signal processing circuit substratestacked thereon, and is not diced yet, similarly to FIG. 8. The sameparts as in FIG. 8 are denoted by the same reference numerals, and adescription thereof is omitted.

In a wafer illustrated in FIG. 13, a chip positioned at the center isreferred to as a “chip 170-1,” a chip positioned at the left is referredto as a “chip 170-2,” and a chip positioned at the right is referred toas a “chip 170-3.”

In the wafer illustrated in FIG. 13, a groove 171 is formed between thechips 170. The groove 171-1 is formed between the chip 170-1 and thechip 170-2, and the groove 171-2 is formed between the chip 170-1 andthe chip 170-3.

The chip 170 illustrated in FIG. 13 having the groove 171 is similar tothe chip 130 illustrated in FIG. 8 except that a low refractive indexfilm 172 is formed between the adhesive layer 80 and the microlens layer79 of the chip 130 illustrated in FIG. 8, and thus a description thereofis omitted. The low refractive index film 172 is a film that is formedon the microlens layer 79 and made of a material having a refractiveindex lower than a material for forming the microlens layer 79.

As dicing is performed in the state in which the groove 171 is formedand filled with the same material as the adhesive layer 80 as describedabove, force applied to an interface between films at the time of dicingcan be mitigated, and a possibility that film peeling or a crack willoccur can be reduced. Further, since film peeling or a crack does notoccur, the moisture-proof performance of the chip can be improved.

Further, the (1-2)-nd embodiment may be applied to the (1-7)-thembodiment such that the space 122 is formed in the adhesive layer 80and the groove 131. When the space 122 is formed, the space 122 may befilled with transparent resin or a member having high moisture-proofperformance.

(1-8)-Th Embodiment

FIG. 14 illustrates another configuration of the chip in the firstembodiment. FIG. 14 illustrates a wafer that includes a plurality ofchips (three chips in FIG. 14) and a signal processing circuit substratestacked thereon, and is not diced yet, similarly to FIG. 9. The sameparts as in FIG. 9 are denoted by the same reference numerals, and adescription thereof is omitted.

In a wafer illustrated in FIG. 14, a chip positioned at the center isreferred to as a “chip 180-1,” a chip positioned at the left is referredto as a “chip 180-2,” and a chip positioned at the right is referred toas a “chip 180-3.”

In the wafer illustrated in FIG. 14, a groove 181 is formed between thechips 180. The groove 181-1 is formed between the chip 180-1 and thechip 180-2, and the groove 181-2 is formed between the chip 180-1 andthe chip 180-3.

The chip 180 illustrated in FIG. 14 having the groove 181 is similar tothe chip 140 illustrated in FIG. 9 except that a low refractive indexfilm 182 is formed between the adhesive layer 80 and the microlens layer79 of the chip 140 illustrated in FIG. 9, and thus a description thereofis omitted. The low refractive index film 182 is a film that is formedon the microlens layer 79 and made of a material having a refractiveindex lower than a material for forming the microlens layer 79.

As dicing is performed in the state in which the groove 181 is formedand filled with the same material as the adhesive layer 80 as describedabove, force applied to an interface between films at the time of dicingcan be mitigated, and a possibility that film peeling or a crack willoccur can be reduced. Further, since film peeling or a crack does notoccur, the moisture-proof performance of the chip can be improved.

Further, the (1-2)-nd embodiment may be applied to the (1-8)-thembodiment such that the space 122 is formed in the adhesive layer 80and the groove 131. When the space 122 is formed, the space 122 may befilled with transparent resin or a member having high moisture-proofperformance.

As described above with reference to the (1-1)-st to the (1-8)-thembodiments, as a groove is formed between chips in a wafer state beforea chip is diced, force applied to an interface between films at the timeof dicing can be mitigated, and a possibility that film peeling or acrack will occur can be reduced. Further, since film peeling or a crackdoes not occur, the moisture-proof performance of the chip can beimproved.

Manufacturing of Chip According to First Embodiment

A process of manufacturing a chip (wafer) having such a groove will bedescribed. FIG. 15 is a diagram for describing a process ofmanufacturing a chip prior to dicing.

The manufacturing process described with reference to FIG. 15 will focuson manufacturing of a groove serving as one of characteristic componentsof the present technology, and a manufacturing method of a related artcan be applied to manufacturing of other parts such as forming oflayers, and thus a description thereof will be appropriately omitted.Here, the description will proceed with an example in which the chip 110of FIG. 6 according to the (1-1)-st embodiment is manufactured.

In step S101, a wafer in which a silicon substrate 73, a planarizationfilm 75, a color filter layer 77, a planarization film 78, and amicrolens layer 79 are stacked, a photodiode 74 is formed in the siliconsubstrate 73, and a light shielding film 76 is formed in theplanarization film 75 is prepared. Further, although not illustrated, awafer in which the interconnection layer 72 and the support substrate 71are stacked may be prepared.

In step S102, a groove 111-1 and a groove 111-2 are formed. For example,the groove 111 is formed by performing dry etching after patterning.Further, when the groove 141 is formed such that up to the supportsubstrate 71 is excavated as in the (1-4)-th embodiment illustrated inFIG. 9, in step S102, the groove 141 is formed to reach the supportsubstrate 71 of the wafer in which the interconnection layer 72 and thesupport substrate 71 are stacked.

In step S103, the adhesive layer 80 is formed. When the adhesive layer80 is formed, the groove 111 is filled with a transparent member forforming the adhesive layer 80. Further, when the space 122 is formed asin the (1-2)-nd embodiment illustrated in FIG. 7, in step S103, theadhesive layer 80 is formed, and then the space 122 is formed byperforming dry-etching, for example, similarly to step S102.

Alternatively, in the case of a configuration in which there is only thespace 122 without the same material as the adhesive layer 80 formed onthe side of the groove 121, in step S103, the space 122 may be formedwithout performing a process of forming a groove in step S102.

In step S104, the cover glass 81 is stacked. After the cover glass 81 isstacked, dicing is performed along the scribe section 91-1 and thescribe section 91-2, and thus the diced chip 110 is manufactured.

As step S102 of forming a groove is performed as described above, forceapplied to an interface between films at the time of dicing can bemitigated, and a possibility that film peeling or a crack will occur canbe reduced.

Second Embodiment

In the second embodiment, a groove is formed in a certain layer in achip to prevent damage at the time of dicing and intrusion of moistureinto a chip.

(2-1)-St Embodiment

FIG. 16 illustrates a configuration of a chip according to the secondembodiment. FIG. 16 illustrates a wafer that includes a plurality ofchips (three chips in FIG. 16) and is not diced yet, similarly to FIG.2.

Here, a chip positioned at the center is referred to as a “chip 200-1,”a chip positioned at the left is referred to as a “chip 200-2,” and achip positioned at the right is referred to as a “chip 200-3.” In thefollowing description, when the chips 200-1 to 200-3 need not bedistinguished from one another, the chips are referred to as simply a“chip 200.”

Each chip 200 has the same configuration as the chip 70 described abovewith reference to FIGS. 2 and 3. In other words, the chip 200 isconfigured such that an interconnection layer 72 is arranged on asupport substrate 71, and a silicon substrate 73 is arranged on theinterconnection layer 72. In the silicon substrate 73, a plurality ofphotodiodes 74 (optical elements) serving as photoelectric conversionunits of pixels are formed at certain intervals.

The planarization film 75 is formed on the silicon substrate 73, and alight shielding film 76 for preventing light from leaking into aneighboring pixel is formed in a portion of the planarization film 75corresponding to a position between the photodiodes 74. A color filterlayer 77 is formed on the planarization film 75. A planarization film 78is formed on the color filter layer 77. A microlens layer 79 is formedon the planarization film 78. A cover glass 81 is bonded onto themicrolens layer 79 through an adhesive layer 80.

In the wafer illustrated in FIG. 16, a groove 201 is formed between thechips 200. The groove 201-1 is formed between the chip 200-1 and thechip 200-2, and the groove 201-2 is formed between the chip 200-1 andthe chip 200-3.

A passivation film 202-1 is formed in the groove 201-1, and apassivation film 202-2 is formed in the groove 201-2. The passivationfilm 202 is preferably a film with a high moisture-proof property madeof an inorganic material such as a SiN film. Since moisture is likely tointrude into a light receiving device (chip) to cause a problem such asimage quality deterioration depending on conditions of humidity,temperature, or the like, the passivation film 202 is formed to protectthe end face of the light receiving device.

The passivation film 202 has a function of preventing moisture fromintruding into the chip 200 and protecting the end face of the chip atthe time of dicing as described above.

There is a scribe section 91-1 between the chip 200-1 and the chip200-2, and the groove 201-1 is formed in the scribe section 91-1.Similarly, there is a scribe section 91-2 between the chip 200-1 and thechip 200-3, and the groove 201-2 is formed in the scribe section 91-2.

In the other drawings subsequent to FIG. 16, in order to help withviewing the groove 201-2, the description will proceed in a state inwhich the scribe section 91-2 is not illustrated.

In the chip 200 illustrated in FIG. 16, the groove 201 is formed suchthat the microlens layer 79, the planarization film 78, the color filterlayer 77, and the planarization film 75 are excavated up to an upperportion of the silicon substrate 73.

Further, since the passivation film 202 is formed in the groove 201, thepassivation film 202 is formed on the side surfaces of the microlenslayer 79, the planarization film 78, the color filter layer 77, and theplanarization film 75 and the upper portion of the silicon substrate 73.

As will be described later, at the time of manufacturing, since thegroove 201 is formed before the adhesive layer 80 is formed, thepassivation film 202 is formed after the groove 201 is formed, and theadhesive layer 80 is formed after the passivation film 202 is formed,the groove 201 (the inside of the rectangle formed by the passivationfilm 202) is filled with the same material as the adhesive layer 80.Transparent resin may be used as a material for forming the adhesivelayer 80. The groove 201 may be filled with the transparent resin.

Here, the description proceeds with the example in which the passivationfilm 202 is formed, and the inside of the passivation film 202 is filledwith the same material as the adhesive layer 80, but the groove 201 maybe filled with only the material of the passivation film 202.

When the wafer in which the groove 201 is formed between the chips 200is diced along the scribe section 91, the chip 200-1 illustrated in FIG.17 is cut out. In the chip 200-1 illustrated in FIG. 17, thecross-sectional surfaces of the microlens layer 79, the planarizationfilm 78, the color filter layer 77, and the planarization film 75 arecovered with the passivation film 202 and thus not exposed on thesurface. Further, the microlens layer 79, the planarization film 78, thecolor filter layer 77, and the planarization film 75 are covered withthe same material as the adhesive layer 80.

As described above, the diced chip 200-1 has a structure in which partsof the stacked layers of the chip 200-1 are covered with the groove201-1′ and the groove 201-2′ (a dash is added to the grooves afterdicing in order to be distinguished from the groove 201-1 and the groove201-2 before dicing illustrated in FIG. 16).

Since the diced chip 200-1 is configured such that the groove 201-1′ andthe groove 201-2′ remain, and the passivation film 202 remains in theportions of the groove 201-1′ and the groove 201-2′ as described above,a width of the groove 201-1 or the groove 201-2 between the chips 200before dicing is preferably larger than a width of a blade used in thedicing process.

As the dicing is performed in a state in which the groove 201 is formed,and the passivation film 202 is formed on the inner side of the groove201 as described above, force applied to an interface between films atthe time of dicing can be mitigated, and a possibility that film peelingor a crack will occur can be reduced. Further, since film peeling or acrack does not occur, the moisture-proof performance of the chip can beimproved. Further, as the passivation film 202 is formed, themoisture-proof performance can be further improved.

(2-2)-Nd Embodiment

FIG. 18 illustrates another configuration of a chip according to thesecond embodiment. FIG. 18 illustrates a wafer that includes a pluralityof chips (three chips in FIG. 18) and is not diced yet, similarly toFIG. 16. The same parts as in FIG. 16 are denoted by the same referencenumerals, and a description thereof is omitted.

In a wafer illustrated in FIG. 18, a chip positioned at the center isreferred to as a “chip 210-1,” a chip positioned at the left is referredto as a “chip 210-2,” and a chip positioned at the right is referred toas a “chip 210-3.”

In the wafer illustrated in FIG. 18, a groove 211 is formed between thechips 210. The groove 211-1 is formed between the chip 210-1 and thechip 210-2, and the groove 211-2 is formed between the chip 210-1 andthe chip 210-3.

In the wafer illustrated in FIG. 18, the groove 211 is formed such thatup to a part of the silicon substrate 73 is excavated. In other words,in the chip 210 illustrated in FIG. 18, the groove 211 is formed suchthat the microlens layer 79, the planarization film 78, the color filterlayer 77, the planarization film 75, and a part of the silicon substrate73 are excavated.

Further, a passivation film 212 is formed in the groove 211, and thusthe passivation film 212 is formed to cover the respective layers of themicrolens layer 79, the planarization film 78, the color filter layer77, the planarization film 75, and a part of the silicon substrate 73.

The groove 211 (the inside of the rectangle formed by the passivationfilm 212) is filled with the same material as the adhesive layer 80.Transparent resin may be used as a material for forming the adhesivelayer 80. The groove 211 may be filled with the transparent resin.

Here, the description proceeds with the example in which the passivationfilm 212 is formed, and the inside of the passivation film 212 is filledwith the same material as the adhesive layer 80, but the groove 211 maybe filled with only the material of the passivation film 212.

When the wafer in which the groove 211 is formed between the chips 210is diced along the scribe section 91, the cross-sectional surfaces ofthe microlens layer 79, the planarization film 78, the color filterlayer 77, the planarization film 75, and the part of the siliconsubstrate 73 are covered with the passivation film 212 and thus notexposed on the surface. Further, the microlens layer 79, theplanarization film 78, the color filter layer 77, the planarization film75, and the part of the silicon substrate 73 are covered with the samematerial as the adhesive layer 80.

As the dicing is performed in a state in which the groove 211 is formedand the passivation film 212 is formed on the inner side of the groove211 as described above, force applied to an interface between films atthe time of dicing can be mitigated, and a possibility that film peelingor a crack will occur can be reduced. Further, since film peeling or acrack does not occur, the moisture-proof performance of the chip can beimproved. Further, as the passivation film 212 is formed, themoisture-proof performance can be further improved.

(2-3)-Rd Embodiment

FIG. 19 illustrates another configuration of a chip according to thesecond embodiment. FIG. 19 illustrates a wafer that includes a pluralityof chips (three chips in FIG. 19) and is not diced yet, similarly toFIG. 2.

Here, a chip positioned at the center is referred to as a “chip 220-1,”a chip positioned at the left is referred to as a “chip 220-2,” and achip positioned at the right is referred to as a “chip 220-3.”

In the wafer illustrated in FIG. 19, a groove 221 is formed between thechips 220. The groove 221-1 is formed between the chip 220-1 and thechip 220-2, and the groove 221-2 is formed between the chip 220-1 andthe chip 220-3. A passivation film 222 is formed in the groove 221-1 andthe groove 221-2, and the passivation film 222 is formed above themicrolens layer 79 as well.

There is a scribe section 91-1 between the chip 220-1 and the chip220-2, and the groove 221-1 is formed in the scribe section 91-1.Similarly, there is a scribe section 91-2 between the chip 220-1 and thechip 220-3, and the groove 221-2 is formed in the scribe section 91-2.

In the chip 220 illustrated in FIG. 19, the groove 221 is formed suchthat the microlens layer 79, the planarization film 78, the color filterlayer 77, and the planarization film 75 are excavated up to an upperportion of the silicon substrate 73.

Further, since the passivation film 222 is formed in the groove 221, thepassivation film 222 is formed on the side surfaces of the microlenslayer 79, the planarization film 78, the color filter layer 77, and theplanarization film 75 and above the silicon substrate 73 and themicrolens layer 79.

Since the passivation film 222 is formed even above the microlens layer79, a material having characteristic transparency N in a visible regionis equal to or larger than 1.55 is preferably used. Alternatively, amaterial of absorbing a certain wavelength may be used.

The chip 220 illustrated in FIG. 19 is the same as the chip 200illustrated in FIG. 16 according to the (2-1)-st embodiment except thatthe passivation film 222 is formed even above the microlens layer 79,and thus a description thereof is omitted.

When the wafer in which the groove 221 is formed between the chips 220is diced along the scribe section 91, the cross-sectional surfaces ofthe microlens layer 79, the planarization film 78, the color filterlayer 77, and the planarization film 75 are covered with the passivationfilm 222 and thus not exposed on the surface. Further, the microlenslayer 79, the planarization film 78, the color filter layer 77, and theplanarization film 75 are covered with the same material as the adhesivelayer 80.

Further, since the passivation film 222 is formed even above themicrolens layer 79, for example, even when moisture intrudes from theadhesive layer 80, the passivation film 222 can prevent moisture fromintruding into the microlens layer 79 side. Thus, the moisture-proofperformance of the chip 220 can be further improved.

As the dicing is performed in a state in which the groove 221 is formedand the passivation film 222 is formed on the inner side of the groove221 as described above, force applied to an interface between films atthe time of dicing can be mitigated, and a possibility that film peelingor a crack will occur can be reduced. Further, since film peeling or acrack does not occur, the moisture-proof performance of the chip can beimproved. Further, as the passivation film 222 is formed, themoisture-proof performance can be further improved.

(2-4)-Th Embodiment

FIG. 20 illustrates another configuration of a chip according to thesecond embodiment. FIG. 20 illustrates a wafer that includes a pluralityof chips (three chips in FIG. 20) and is not diced yet, similarly toFIG. 18. The same parts as in FIG. 18 are denoted by the same referencenumerals, and a description thereof is omitted.

In a wafer illustrated in FIG. 20, a chip positioned at the center isreferred to as a “chip 230-1,” a chip positioned at the left is referredto as a “chip 230-2,” and a chip positioned at the right is referred toas a “chip 230-3.”

In the wafer illustrated in FIG. 20, a groove 231 is formed between thechips 230. The groove 231-1 is formed between the chip 230-1 and thechip 230-2, and the groove 231-2 is formed between the chip 230-1 andthe chip 230-3.

In the wafer illustrated in FIG. 20, the groove 231 is formed such thatup to a part of the silicon substrate 73 is excavated. In other words,in the chip 230 illustrated in FIG. 20, the groove 231 is formed suchthat the microlens layer 79, the planarization film 78, the color filterlayer 77, the planarization film 75, and a part of the silicon substrate73 are excavated.

Further, a passivation film 232 is formed in the groove 231, and thepassivation film 232 is also formed to cover the respective layers ofthe microlens layer 79, the planarization film 78, the color filterlayer 77, the planarization film 75, and a part of the silicon substrate73.

This configuration is the same as that of the chip 210 illustrated inFIG. 18 according to the (2-2)-nd embodiment. Further, the chip 230illustrated in FIG. 20 is different from the chip 210 illustrated inFIG. 18 the passivation film 232 is formed even above the microlenslayer 79.

Since the passivation film 232 is formed even above the microlens layer79, a material having characteristic transparency N in a visible regionis equal to or larger than 1.55 is preferably used. Alternatively, amaterial of absorbing a certain wavelength may be used.

When the wafer in which the groove 231 is formed between the chips 230is diced along the scribe section 91, the cross-sectional surfaces ofthe microlens layer 79, the planarization film 78, the color filterlayer 77, the planarization film 75, and the part of the siliconsubstrate 73 are covered with the passivation film 232 and thus notexposed on the surface. Further, the microlens layer 79, theplanarization film 78, the color filter layer 77, the planarization film75, and the part of the silicon substrate 73 are covered with the samematerial as the adhesive layer 80.

Further, since the passivation film 232 is formed even on the microlenslayer 79, for example, even when moisture intrudes from the adhesivelayer 80, the passivation film 232 can prevent moisture from intrudinginto the microlens layer 79 side. Thus, the moisture-proof performanceof the chip 230 can be further improved.

As the dicing is performed in a state in which the groove 231 is formedand the passivation film 232 is formed on the inner side of the groove231 as described above, force applied to an interface between films atthe time of dicing can be mitigated, and a possibility that film peelingor a crack will occur can be reduced. Further, since film peeling or acrack does not occur, the moisture-proof performance of the chip can beimproved. Further, as the passivation film 232 is formed, themoisture-proof performance can be further improved.

(2-5)-Th Embodiment

FIG. 21 illustrates another configuration of a chip according to thesecond embodiment. FIG. 21 illustrates a wafer that includes a pluralityof chips (three chips in FIG. 21) and is not diced yet, similarly toFIG. 2.

Here, a chip positioned at the center is referred to as a “chip 240-1,”a chip positioned at the left is referred to as a “chip 240-2,” a chippositioned at the right is referred to as a “chip 240-3.”

In a wafer illustrated in FIG. 21, a groove 241 is formed between thechips 240. The groove 241-1 is formed between the chip 240-1 and thechip 240-2, and the groove 241-2 is formed between the chip 240-1 andthe chip 240-3.

There is a scribe section 91-1 between the chip 240-1 and the chip240-2, and the groove 241-1 is formed in the scribe section 91-1.Similarly, there is a scribe section 91-2 between the chip 240-1 and thechip 240-3, and the groove 241-2 is formed in the scribe section 91-2.

In the chip 240 illustrated in FIG. 21, the groove 241 is formed suchthat the microlens layer 79, the planarization film 78, the color filterlayer 77, and the planarization film 75 are excavated up to an upperportion of the silicon substrate 73. A passivation film 242 is formed onthe side of the groove 241. The passivation film 242-2 is formed on theside of the groove 241-1, and the passivation film 242-5 is formed onthe side of the groove 241-2.

A rib 243-1 is formed on at the left side of the passivation film 242-2in FIG. 21, and the passivation film 242-1 is formed on the left side ofthe rib 243-1. The rib 243-1 is configured to include the passivationfilm 242 at the left and right sides thereof. Similarly, the rib 243-2is formed on the right side of the passivation film 242-2 in FIG. 21,and the passivation film 242-3 is formed at the right side of the rib243-2. The rib 243-2 is configured to include the passivation film 242at the left and right sides thereof.

Further, similarly, the rib 243-2 is formed on the left side of thepassivation film 242-5 in FIG. 21, and the passivation film 242-4 isformed at the left side of the rib 243-2. The rib 243-2 is configured toinclude the passivation film 242 at the left and right sides thereof.Similarly, the rib 243-4 is formed on the right side of the passivationfilm 242-5 in FIG. 21, and the passivation film 242-6 is formed at theright side of the rib 243-4. The rib 243-2 is configured to include thepassivation film 242 at the left and right sides thereof.

As described above, the rib 243 is formed on a sensor substrate, forexample, using a lithography technique, and the passivation film 242 isformed on the side of the rib 243.

When the wafer in which the groove 241 is formed between the chips 240is diced along the scribe section 91, the cross-sectional surfaces ofthe adhesive layer 80, the microlens layer 79, the planarization film78, the color filter layer 77, and the planarization film 75 are coveredwith the passivation film 242 and thus not exposed on the surface as inthe chip 240-1 illustrated in FIG. 22.

Further, the adhesive layer 80, the microlens layer 79, theplanarization film 78, the color filter layer 77, and the planarizationfilm 75 are covered with the same material as the adhesive layer 80.Further, the groove 241 is formed by filling it with the passivationfilm 242, the groove 241 is covered with only the passivation film 242.

Further, since the rib 243 is formed in the adhesive layer 80, and thepassivation film 242 is formed in the rib 243, for example, the rib 243and the passivation film 242 can prevent moisture from intruding intothe adhesive layer 80. Thus, the moisture-proof performance of the chip240 can be further improved.

As the dicing is performed in the state in which the groove 241 isformed, the passivation film 242 is formed in the inner side of thegroove 241, the rib 243 is formed, and the passivation film 242 isformed even in the rib 243, force applied to an interface between filmsat the time of dicing can be mitigated, and a possibility that filmpeeling or a crack will occur can be reduced. Further, since filmpeeling or a crack does not occur, the moisture-proof performance of thechip can be improved.

Further, as the passivation film 242 and the rib 243 are formed, themoisture-proof performance can be further improved. Further, as the rib243 is formed, it is possible to block or reduce a stray light componentfrom the side of the chip 240, and there is an effect of preventing aflare or the like.

(2-6)-Th Embodiment

FIG. 23 illustrates another configuration of a chip according to thesecond embodiment. A chip 250 illustrated in FIG. 23 has a configurationin which the configuration of the chip 240 having the rib illustrated inFIG. 21 according to the (2-5)-th embodiment is applied to the chip 210illustrated in FIG. 18 according to the (2-2)-nd embodiment.

A wafer illustrated in FIG. 23 is also a wafer that includes a pluralityof chips (three chips in FIG. 23) and is not diced yet.

Here, a chip positioned at the center is referred to as a “chip 250-1,”a chip positioned at the left is referred to as a “chip 250-2,” and achip positioned at the right is referred to as a “chip 250-3.”

In the wafer illustrated in FIG. 23, a groove 251 is formed between thechips 250. The groove 251-1 is formed between the chip 250-1 and thechip 250-2, and the groove 251-2 is formed between the chip 250-1 andthe chip 250-3.

There is a scribe section 91-1 between the chip 250-1 and the chip250-2, and the groove 251-1 is formed in the scribe section 91-1.Similarly, there is a scribe section 91-2 between the chip 250-1 and thechip 250-3, and the groove 251-2 is formed in the scribe section 91-2.

In the wafer illustrated in FIG. 23, the groove 251 is formed such thatup to a part of the silicon substrate 73 is excavated. In other words,in the chip 250 illustrated in FIG. 23, the groove 251 is formed suchthat the microlens layer 79, the planarization film 78, the color filterlayer 77, the planarization film 75, and a part of the silicon substrate73 are excavated.

A passivation film 252 is formed on the side of the groove 251. Thepassivation film 252-2 is formed on the side of the groove 251-1, andthe passivation film 252-5 is formed on the side of the groove 251-2. Arib 253-1 is formed on the left side of the passivation film 252-2 inFIG. 23, and the passivation film 252-1 is formed on the side of the rib253-1. The rib 253-1 is configured to include the passivation film 252at the left and right side thereof.

Similarly, a rib 253-2 is formed on the right side of the passivationfilm 252-2 in FIG. 23, and the passivation film 252-3 is formed on theright side of the rib 253-2. The rib 253-2 is configured to include thepassivation film 252 at the left and right side thereof.

Further, similarly, the rib 253-3 is formed on the left side of thepassivation film 252-5 in FIG. 23, and the passivation film 252-4 isformed on the left side of the rib 253-3. The rib 253-3 is configured toinclude the passivation film 252 at the left and right side thereof.Similarly, a rib 253-4 is formed on the right side of the passivationfilm 252-5 in FIG. 23, and the passivation film 252-6 is formed on theright side of the rib 253-4. The rib 253-4 is configured to include thepassivation film 252 at the left and right side thereof.

As described above, the rib 253 is formed on a sensor substrate, forexample, using a lithography technique, and the passivation film 252 isformed on the side of the rib 253.

When the wafer in which the groove 251 is formed between the chips 250is diced along the scribe section 91, the cross-sectional surfaces ofthe adhesive layer 80, the microlens layer 79, the planarization film78, the color filter layer 77, the planarization film 75, and the partof the silicon substrate 73 are covered with the passivation film 252and thus not exposed on the surface.

Further, the adhesive layer 80, the microlens layer 79, theplanarization film 78, the color filter layer 77, the planarization film75, and the part of the silicon substrate 73 are covered with the samematerial as the adhesive layer 80. Further, when the groove 251 isfilled with the passivation film 252, the groove 251 is covered withonly the passivation film 252.

Further, since the rib 253 is formed in the adhesive layer 80, and thepassivation film 252 is formed in the rib 253, for example, the rib 253and the passivation film 252 can prevent moisture from intruding intothe adhesive layer 80. Thus, the moisture-proof performance of the chip250 can be further improved.

As the dicing is performed in the state in which the groove 251 isformed, the passivation film 252 is formed in the inner side of thegroove 251, the rib 253 is formed, and the passivation film 252 isformed even in the rib 253, force applied to an interface between filmsat the time of dicing can be mitigated, and a possibility that filmpeeling or a crack will occur can be reduced. Further, since filmpeeling or a crack does not occur, the moisture-proof performance of thechip can be improved.

Further, as the passivation film 252 and the rib 253 are formed, themoisture-proof performance can be further improved. Further, as the rib253 is formed, it is possible to block or reduce a stray light componentfrom the side of the chip 250, and there is an effect of preventing aflare or the like.

(2-7)-Th Embodiment

FIG. 24 illustrates another configuration of a chip according to thesecond embodiment. A chip 260 illustrated in FIG. 24 has a configurationin which the configuration of the chip 240 having the rib illustrated inFIG. 21 according to the (2-5)-th embodiment is applied to the chip 220illustrated in FIG. 19 according to the (2-3)-rd embodiment.

A wafer illustrated in FIG. 24 is also a wafer that includes a pluralityof chips (three chips in FIG. 24) and is not diced yet.

Here, a chip positioned at the center is referred to as a “chip 260-1,”a chip positioned at the left is referred to as a “chip 260-2,” and achip positioned at the right is referred to as a “chip 260-3.”

In the wafer illustrated in FIG. 24, a groove 261 is formed between thechips 260. The groove 261-1 is formed between the chip 260-1 and thechip 260-2, and the groove 261-2 is formed between the chip 260-1 andthe chip 260-3.

There is a scribe section 91-1 between the chip 260-1 and the chip260-2, and the groove 261-1 is formed in the scribe section 91-1.Similarly, there is a scribe section 91-2 between the chip 260-1 and thechip 260-3, and the groove 261-2 is formed in the scribe section 91-2.

In the chip 260 illustrated in FIG. 24, the groove 261 is formed suchthat the microlens layer 79, the planarization film 78, the color filterlayer 77, and the planarization film 75 are excavated up to the upperportion of the silicon substrate 73. Further, since a passivation film262 is formed in the groove 261, the passivation film 262 is also formedon the side surfaces of the microlens layer 79, the planarization film78, the color filter layer 77, and the planarization film 75 and abovethe silicon substrate 73 and the microlens layer 79.

Since the passivation film 262 is also formed even above the microlenslayer 79, a material having characteristic transparency N in a visibleregion is equal to or larger than 1.55 is preferably used.Alternatively, a material of absorbing a certain wavelength may be used.

Further, a rib 263 is also formed in each chip 260 of the waferillustrated in FIG. 24. The rib 263-1 is formed on the left side of thegroove 261-1, and the rib 263-2 is formed on the right side of thegroove 261-1. Further, the rib 263-3 is formed on the left side of thegroove 261-2, and the rib 263-4 is formed on the right side of thegroove 261-2. The sides and the upper portion of the rib 263 are alsocovered with the passivation film 262 as illustrated in FIG. 24.

When the wafer in which the groove 261 is formed between the chips 260is diced along the scribe section 91, the cross-sectional surfaces ofthe adhesive layer 80, the microlens layer 79, the planarization film78, the color filter layer 77, and the planarization film 75 are coveredwith the passivation film 262 and thus not exposed on the surface.

Further, the adhesive layer 80, the microlens layer 79, theplanarization film 78, the color filter layer 77, and the planarizationfilm 75 are covered with the same material as the adhesive layer 80.Further, when the groove 261 is formed by filling it with thepassivation film 262, the groove 261 is covered with only thepassivation film 262.

Further, since the rib 263 is formed in the adhesive layer 80, and thepassivation film 262 is formed in the rib 263, for example, the rib 263and the passivation film 262 can prevent moisture from intruding intothe adhesive layer 80. Thus, the moisture-proof performance of the chip260 can be further improved.

As the dicing is performed in a state in which the groove 261 is formed,the passivation film 262 is formed on the inner side of the groove 261,the rib 263 is formed, and the passivation film 262 is formed even inthe rib 263 as described above, force applied to an interface betweenfilms at the time of dicing can be mitigated, and a possibility thatfilm peeling or a crack will occur can be reduced. Further, since filmpeeling or a crack does not occur, the moisture-proof performance of thechip can be improved.

Further, as the passivation film 262 and the rib 263 are formed, themoisture-proof performance can be further improved. Further, as the rib263 is formed, it is possible to block or reduce a stray light componentfrom the side of the chip 260, and there is an effect of preventing aflare or the like.

(2-8)-Th Embodiment

FIG. 25 illustrates another configuration of a chip according to thesecond embodiment. A chip 270 illustrated in FIG. 25 has a configurationin which the configuration of the chip 240 having the rib illustrated inFIG. 21 according to the (2-5)-th embodiment is applied to the chip 230illustrated in FIG. 20 according to the (2-4)-th embodiment.

A wafer illustrated in FIG. 25 is also a wafer that includes a pluralityof chips (three chips in FIG. 25) and is not diced yet.

Here, a chip positioned at the center is referred to as a “chip 270-1,”a chip positioned at the left is referred to as a “chip 270-2,” and achip positioned at the right is referred to as a “chip 270-3.”

In the wafer illustrated in FIG. 25, a groove 271 is formed between thechips 270. The groove 271-1 is formed between the chip 270-1 and thechip 270-2, and the groove 271-2 is formed between the chip 270-1 andthe chip 270-3.

In the wafer illustrated in FIG. 25, the groove 271 is formed such thatup to a part of the silicon substrate 73 is excavated. In other words,in the chip 270 illustrated in FIG. 25, the groove 271 is formed suchthat the microlens layer 79, the planarization film 78, the color filterlayer 77, the planarization film 75, and a part of the silicon substrate73 are excavated.

Further, since a passivation film 272 is formed in the groove 271, thepassivation film 272 is also formed to cover the microlens layer 79, theplanarization film 78, the color filter layer 77, the planarization film75, and the part of the silicon substrate 73.

Further, in the chip 270 illustrated in FIG. 25, the passivation film272 is formed even above the microlens layer 79. Since the passivationfilm 272 is formed even above the microlens layer 79, a material havingcharacteristic transparency N in a visible region is equal to or largerthan 1.55 is preferably used. Alternatively, a material of absorbing acertain wavelength may be used.

Further, a rib 273 is also formed in each chip 270 of the waferillustrated in FIG. 25. The rib 273-1 is formed on the left side of thegroove 271-1, and the rib 273-2 is formed on the right side of thegroove 271-1. Further, the rib 273-3 is formed on the left side of thegroove 271-2, and the rib 273-4 is formed on the right side of thegroove 271-2. The sides and the upper portion of the rib 273 are alsocovered with the passivation film 272 as illustrated in FIG. 25.

When the wafer in which the groove 271 is formed between the chips 270is diced along the scribe section 91, the cross-sectional surfaces ofthe adhesive layer 80, the microlens layer 79, the planarization film78, the color filter layer 77, the planarization film 75, and the partof the silicon substrate 73 are covered with the passivation film 272and thus not exposed on the surface.

Further, the adhesive layer 80, the microlens layer 79, theplanarization film 78, the color filter layer 77, the planarization film75, and the part of the silicon substrate 73 are covered with the samematerial as the adhesive layer 80. Further, when the groove 271 isformed by filling it with the passivation film 272, the groove 271 iscovered with only the passivation film 272.

Further, since the rib 273 is formed in the adhesive layer 80, and thepassivation film 272 is formed in the rib 273, for example, the rib 273and the passivation film 272 can prevent moisture from intruding intothe adhesive layer 80. Thus, the moisture-proof performance of the chip270 can be further improved.

As the dicing is performed in a state in which the groove 271 is formedthe passivation film 272 is formed on the inner side of the groove 271,the rib 273 is formed, and the passivation film 272 is formed even inthe rib 273 as described above, force applied to an interface betweenfilms at the time of dicing can be mitigated, and a possibility thatfilm peeling or a crack will occur can be reduced. Further, since filmpeeling or a crack does not occur, the moisture-proof performance of thechip can be improved.

Further, as the passivation film 272 and the rib 273 are formed, themoisture-proof performance can be further improved. Further, as the rib273 is formed, it is possible to block or reduce a stray light componentfrom the side of the chip 270, and there is an effect of preventing aflare or the like.

Manufacturing of Chip According to Second Embodiment

A process of manufacturing a chip (wafer) having such a groove will bedescribed. FIG. 26 is a diagram for describing a process ofmanufacturing a chip prior to dicing.

The manufacturing process described with reference to FIG. 26 will focuson manufacturing of a groove serving as one of characteristic componentsof the present technology, and a manufacturing method of a related artcan be applied to manufacturing of other parts such as forming oflayers, and thus a description thereof will be appropriately omitted.Here, the description will proceed with an example in which the chip 200of FIG. 16 according to the (2-1)-st embodiment is manufactured.

In step S201, a wafer in which a silicon substrate 73, a planarizationfilm 75, a color filter layer 77, a planarization film 78, and amicrolens layer 79 are stacked, a photodiode 74 is formed in the siliconsubstrate 73, and a light shielding film 76 is formed in theplanarization film 75 is prepared. Further, although not illustrated, awafer in which the interconnection layer 72 and the support substrate 71are stacked may be prepared.

In step S202, a groove 201-1 and a groove 201-2 are formed. For example,the groove 201 is formed by performing dry etching after patterning.Further, when the groove 141 is formed such that up to the siliconsubstrate 73 is excavated as in the (2-2)-nd embodiment illustrated inFIG. 18, in step S202, the groove 141 is formed to reach the siliconsubstrate 73.

In step S203, a passivation film 202-1 and a passivation film 202-2 areformed. The passivation film 202 of the chip 200 illustrated in FIG. 16is formed by forming the passivation film 202 and removing thepassivation film on the microlens layer 79. When a subsequent process isperformed without removing the passivation film on the microlens layer79 after the passivation film 202 is formed in step S203, for example,the passivation film 222 of the chip 220 illustrated in FIG. 19 can beformed.

For example, when the rib 243 is formed in order to provide theconfiguration of the chip 240 illustrated in FIG. 21, in a processbetween step S202 and step S203, the rib 243 is formed, and thereafterthe passivation film 242 is formed.

In step S204, the adhesive layer 80 is formed. When the adhesive layer80 is formed, the groove 201 (the inner side of the passivation film202) is also filled with a transparent member configuring the adhesivelayer 80.

In step S205, the cover glass 81 is stacked. After the cover glass 81 isstacked, dicing is performed along the scribe section 91-1 and thescribe section 91-2, and thus the diced chip 200 is manufactured.

As step S202 of forming the groove or step S203 of forming thepassivation film is performed as described above, force applied to aninterface between films at the time of dicing can be mitigated, and apossibility that film peeling or a crack will occur can be reduced.

Third Embodiment

In the third embodiment, intrusion of moisture into a chip is preventedsuch that a rib is formed in a certain layer in a chip, and a moistureresistant film is formed around the rib.

(3-1)-St Embodiment

FIG. 27 illustrates a configuration of a chip according to the thirdembodiment. FIG. 27 illustrates a wafer that includes a plurality ofchips (three chips in FIG. 27) and is not diced yet, similarly to FIG.2.

Here, a chip positioned at the center is referred to as a “chip 300-1,”a chip positioned at the left is referred to as a “chip 300-2,” and achip positioned at the right is referred to as a “chip 300-3.” In thefollowing description, when the chips 300-1 to 300-3 need not bedistinguished from one another, the chips are referred to as simply a“chip 300.”

Each chip 300 has the same configuration as the chip 70 described abovewith reference to FIGS. 2 and 3. In other words, the chip 300 isconfigured such that an interconnection layer 72 is arranged on asupport substrate 71, and a silicon substrate 73 is arranged on theinterconnection layer 72. In the silicon substrate 73, a plurality ofphotodiodes 74 (optical elements) serving as photoelectric conversionunits of pixels are formed at certain intervals.

The planarization film 75 is formed on the silicon substrate 73, and alight shielding film 76 for preventing light from leaking into aneighboring pixel is formed in a portion of the planarization film 75corresponding to a position between the photodiodes 74. A color filterlayer 77 is formed on the planarization film 75. A planarization film 78is formed on the color filter layer 77. A microlens layer 79 is formedon the planarization film 78. A cover glass 81 is bonded onto themicrolens layer 79 through an adhesive layer 80.

In the wafer illustrated in FIG. 27, a rib 301 is formed between thechips 300. The rib 301-1 is formed between the chip 300-1 and the chip300-2, and the rib 301-2 is formed between the chip 300-1 and the chip300-3. The rib 301 is formed in a square form.

There is a scribe section 91-1 between the chip 300-1 and the chip300-2, and the rib 301-1 is formed in the scribe section 91-1.Similarly, there is a scribe section 91-2 between the chip 300-1 and thechip 300-3, and the rib 301-2 is formed in the scribe section 91-2.

The rib 301 is preferably made of a photosensitive resin material thathas tolerance such as heat resistance, is used to form a patterning orthe like, and has low in elastic modulus.

A side and a lower portion of the rib 301 are surrounded by the moistureresistant film 302. The moisture resistant film 302-1 is formed on theside of the rib 301-1 at the adhesive layer 80 side and the bottom faceof the rib 301-1 at the microlens layer 79 side. The moisture resistantfilm 302-2 is formed on the side of the rib 301-2 at the adhesive layer80 side and the bottom face of the rib 301-2 at the microlens layer 79side.

For example, the moisture resistant film 302 is a film that is made of amaterial having a function of preventing moisture from intruding intothe chip 300 such as a silicon nitride film. Here, the moistureresistant film 302 is described not to be formed on the top surface ofthe rib 301 at the cover glass 81 side, but the moisture resistant film302 may be formed on the top surface of the rib 301 at the cover glass81 side.

When the wafer in which the rib 301 is formed between the chips 300 isdiced along the scribe section 91, the chip 300 illustrated in FIG. 28is cut out. Here, the description proceeds with the example in which thechip 300-1 is cut out.

In the chip 300-1 illustrated in FIG. 28, the rib 301-1′ and the rib301-2′ (a dash is added to the rib after dicing in order to bedistinguished from the rib 301-1 and the rib 301-2 before dicingillustrated in FIG. 27) are formed on the cross-sectional surface of theadhesive layer 80, and thus the adhesive layer 80 does not come intocontact with the outside.

Further, the moisture resistant film 302-1′ is formed between the rib301-1′ and the microlens layer 79, the moisture resistant film 302-1′ isformed even between the rib 301-1′ and the adhesive layer 80, and theadhesive layer 80 does not come into contact with the outside.

Similarly, the moisture resistant film 302-2′ is formed between the rib301-2′ and the microlens layer 79, the moisture resistant film 302-2′ isformed even between the rib 301-2′ and the adhesive layer 80, and theadhesive layer 80 does not come into contact with the outside.

As the rib 301 and the moisture resistant film 302 are formed at bothends of the adhesive layer 80 of the chip 300 as described above,moisture can be prevented from intruding into the adhesive layer 80.Further, as the rib 301 is formed, tolerance to an external shock or thelike is enhanced.

In other words, when force is applied to the chip 300, the rib 301 canserve as a shock absorber and absorb a shock, and thus tolerance to anexternal shock on the chip 300 or the like can be enhanced.

Further, even when a crack or the like occurs, the crack can be stoppedby the rib 301, and it is possible to prevent the moisture resistantfilm 302 from being broken. The moisture resistant film 302 can bemaintained without being broken, and thus improve moisture-resistanceperformance can be improved. Further, the moisture resistant film 302can be formed at a thin thickness, film stress-induced influence can bereduced, and thus sufficient moisture-resistance performance can beobtained.

(3-2)-Nd Embodiment

FIG. 29 illustrates another configuration of a chip according to thethird embodiment. FIG. 29 illustrates a state of a diced chip afterdicing, similarly to FIG. 28. A configuration of a chip 310 illustratedin FIG. 29 is basically the same as the configuration of the chip 300illustrated in FIG. 28 except a shape of a rib.

In the chip 310 illustrated in FIG. 29, a rib 311-1 and a rib 311-2 areformed on the cross-sectional surface of the adhesive layer 80, and theadhesive layer 80 does not come into contact with the outside. Further,a moisture resistant film 312-1 is formed between the rib 311-1 and themicrolens layer 79, the moisture resistant film 312-1 is formed evenbetween the rib 311-1 and the adhesive layer 80, and the adhesive layer80 does not come into contact with the outside.

Similarly, a moisture resistant film 312-2 is formed between the rib311-2 and the microlens layer 79, the moisture resistant film 312-2 isformed even between the rib 311-2 and the adhesive layer 80, and theadhesive layer 80 does not come into contact with the outside.

The rib 311 has a shape obtained by cutting a trapezoidal shape in half.Although not illustrated, in a wafer state before dicing, a chippositioned at the center is referred to as a “chip 310-1,” a chippositioned at the left is referred to as a “chip 310-2,” and a chippositioned at the right is referred to as a “chip 310-3,” and the rib311 is formed in the wafer state as follows.

The rib 311-1 of the trapezoidal shape is formed between the chip 310-1and the chip 310-2, and the rib 311-2 of the trapezoidal shape is formedbetween the chip 310-1 and the chip 310-3. A moisture resistant film 312is formed on the surface of the rib 311 of the trapezoidal shape at theadhesive layer 80 side and the surface of the rib 311 at the microlenslayer 79 side.

A portion in which there is the rib 311 of the trapezoidal shape, thatis, a portion between the chip 310-1 and the chip 310-2 and a portionbetween the chip 310-1 and the chip 310-3 serve as a scribe section, andthe chip 310 illustrated in FIG. 29 is cut out as dicing is performedalong the scribe sections.

The rib 311 is preferably made of a photosensitive resin material thathas tolerance such as heat resistance, is used to form a patterning orthe like, and has low in elastic modulus. For example, the moistureresistant film 312 is a film that is made of a material having afunction of preventing moisture from intruding into the chip 310 such asa silicon nitride film. Here, the moisture resistant film 312 isdescribed not to be formed on the top surface of the rib 311 at thecover glass 81 side, but the moisture resistant film 312 may be formedon the top surface of the rib 311 at the cover glass 81 side.

For example, when the moisture resistant film 312 is formed of a siliconnitride film or the like, a silicon nitride film or the like can form afilm having a good coverage characteristic in a film forming process,and thus the rib 311 having an inclined surface illustrated in FIG. 29can be formed.

As the rib 311 and the moisture resistant film 312 are formed at bothends of the adhesive layer 80 of the chip 310 as described above,moisture can be prevented from intruding into the adhesive layer 80.Further, as the rib 311 is formed, tolerance to an external shock or thelike is enhanced.

In other words, when force is applied to the chip 310, the rib 311 canserve as a shock absorber and absorb a shock, and thus tolerance to anexternal shock on the chip 310 or the like can be enhanced.

Further, even when a crack or the like occurs, the crack can be stoppedby the rib 311, and it is possible to prevent the moisture resistantfilm 312 from being broken. The moisture resistant film 312 can bemaintained without being broken, and thus improve moisture-resistanceperformance can be improved. Further, the moisture resistant film 312can be formed at a thin thickness, film stress-induced influence can bereduced, and thus sufficient moisture-resistance performance can beobtained.

(3-3)-Rd Embodiment

FIG. 30 illustrates another configuration of a chip according to thethird embodiment. FIG. 30 illustrates a state of a diced chip afterdicing, similarly to FIGS. 28 and 29. A configuration of a chip 320illustrated in FIG. 30 is basically the same as the configuration of thechip 310 illustrated in FIG. 29 except a shape of a moisture resistantfilm.

In a rib 321 of the chip 320 illustrated in FIG. 30, a rib 321-1 and arib 321-2 are formed on the cross-sectional surface of the adhesivelayer 80, and the adhesive layer 80 does not come into contact with theoutside. Further, a moisture resistant film 322-1 is formed between therib 321-1 and the microlens layer 79, the moisture resistant film 322-1is formed even between the rib 321-1 and the adhesive layer 80, and theadhesive layer 80 does not come into contact with the outside.

Similarly, a moisture resistant film 322-2 is formed between the rib321-2 and the microlens layer 79, the moisture resistant film 322-2 isformed even between the rib 321-2 and the adhesive layer 80, and theadhesive layer 80 does not come into contact with the outside.

The rib 321 has a shape obtained by cutting a trapezoidal shape in half.The rib 321 is similar to the rib 311 illustrated in FIG. 29.

Further, in the chip 320 illustrated in FIG. 30, the moisture resistantfilm 322 is formed even between the adhesive layer 80 and the coverglass 81. Referring to FIG. 31, the moisture resistant film 322-1 isformed to extend from the surface of the rib 321-1 at the microlenslayer 79 side to the surface of the rib 321-1 at the adhesive layer 80side, and further formed between the cover glass 81 and the adhesivelayer 80 along the cover glass 81.

Similarly, the moisture resistant film 322-2 is formed to extend fromthe surface of the rib 321-2 at the microlens layer 79 side to thesurface of the rib 321-2 at the adhesive layer 80 side, and furtherformed between the cover glass 81 and the adhesive layer 80 along thecover glass 81.

The moisture resistant film 322 formed between the cover glass 81 andthe adhesive layer 80 is formed not to extend up to the positioncorresponding to the portion in which the microlens of the microlenslayer 79 is formed.

As the moisture resistant film 322 is formed even between the coverglass 81 and the adhesive layer 80 as described above, a structure inwhich an adhesive area between the cover glass 81 and the moistureresistant film 322 is large and adhesive strength is large can beprovided, and thus it is possible to prevent the moisture resistant film322 from being peeled off.

As the rib 321 and the moisture resistant film 322 are formed at bothends of the adhesive layer 80 of the chip 320 as described above,moisture can be prevented from intruding into the adhesive layer 80.Further, as the rib 321 is formed, tolerance to an external shock or thelike is enhanced.

In other words, when force is applied to the chip 320, the rib 321 canserve as a shock absorber and absorb a shock, and thus tolerance to anexternal shock on the chip 320 or the like can be enhanced.

Further, even when a crack or the like occurs, the crack can be stoppedby the rib 321, and it is possible to prevent the moisture resistantfilm 322 from being broken.

Further, the moisture resistant film 322 can be formed at a thinthickness, and thus moisture-resistance performance can be improved.Further, the moisture resistant film 322 can be formed at a thinthickness, film stress-induced influence can be reduced, and thussufficient moisture-resistance performance can be obtained.

(3-4)-Th Embodiment

FIG. 31 illustrates another configuration of a chip according to thethird embodiment. FIG. 31 illustrates a state of a diced chip afterdicing, similarly to FIGS. 28 to 30. A configuration of a chip 330illustrated in FIG. 31 is basically the same as the configuration of thechip 320 illustrated in FIG. 30 except a shape of a moisture resistantfilm.

In a rib 331 of the chip 330 illustrated in FIG. 31, a rib 331-1 and arib 331-2 are formed on the cross-sectional surface of the adhesivelayer 80, and the adhesive layer 80 does not come into contact with theoutside.

The rib 331 has a shape obtained by cutting a trapezoidal shape in half.The rib 331 is similar to the rib 311 illustrated in FIG. 29.

A moisture resistant film 332-1 is formed between the rib 331-1 and themicrolens layer 79, the moisture resistant film 332-1 is formed evenbetween the rib 331-1 and the adhesive layer 80, and the adhesive layer80 does not come into contact with the outside.

Similarly, a moisture resistant film 332-2 is formed between the rib331-2 and the microlens layer 79, the moisture resistant film 332-2 isformed even between the rib 331-2 and the adhesive layer 80, and theadhesive layer 80 does not come into contact with the outside.

Further, in the chip 330 illustrated in FIG. 31, the moisture resistantfilm 332 is formed even between the adhesive layer 80 and the coverglass 81. Referring to FIG. 30, the moisture resistant film 332-1 isformed to extend from the surface of the rib 331-1 at the microlenslayer 79 side to the surface of the rib 331-1 at the adhesive layer 80side, and further formed between the cover glass 81 and the adhesivelayer 80 along the cover glass 81.

Similarly, the moisture resistant film 332-2 is formed to extend fromthe surface of the rib 331-2 at the microlens layer 79 side to thesurface of the rib 331-2 at the adhesive layer 80 side, and furtherformed between the cover glass 81 and the adhesive layer 80 along thecover glass 81.

The moisture resistant film 332 formed between the cover glass 81 andthe adhesive layer 80 is formed not to extend up to the positioncorresponding to the portion in which the microlens of the microlenslayer 79 is formed. The moisture resistant film 332 has a similar shapeto that of the moisture resistant film 322 illustrated in FIG. 30.Further, in the chip 330 illustrated in FIG. 31, the moisture resistantfilm 332 is shaped to include a wedge in order to prevent peeling.

In other words, referring to FIG. 31, among portions of the moistureresistant film 332-1 formed between the cover glass 81 and the adhesivelayer 80, a portion of the moisture resistant film 332-1 at the sideopposite to the rib 331-1 is formed to be inserted into the cover glass81. The moisture resistant film 332-1 is formed in a part of the coverglass 81.

Similarly, among portions of the moisture resistant film 332-2 formedbetween the cover glass 81 and the adhesive layer 80, a portion of themoisture resistant film 332-2 at the side opposite to the rib 331-2 isformed to be inserted into the cover glass 81. The moisture resistantfilm 332-2 is formed in a part of the cover glass 81.

As the moisture resistant film 332 is formed even between the coverglass 81 and the adhesive layer 80 and formed to include the wedge asdescribed above, an adhesive area between the cover glass 81 and themoisture resistant film 332 can be increased, and adhesive strength canbe increased, and thus it is possible to prevent the moisture resistantfilm 332 from being peeled off.

As the rib 331 and the moisture resistant film 332 are formed at bothends of the adhesive layer 80 of the chip 330 as described above,moisture can be prevented from intruding into the adhesive layer 80.Further, as the rib 331 is formed, tolerance to an external shock or thelike is enhanced.

In other words, when force is applied to the chip 330, the rib 331 canserve as a shock absorber and absorb a shock, and thus tolerance to anexternal shock on the chip 330 or the like can be enhanced.

Further, even when a crack or the like occurs, the crack can be stoppedby the rib 331, and it is possible to prevent the moisture resistantfilm 332 from being broken. Furthermore, the moisture resistant film 332can be formed at a thin thickness, and thus moisture-resistanceperformance can be improved. Moreover, the moisture resistant film 332can be formed at a thin thickness, film stress-induced influence can bereduced, and thus sufficient moisture-resistance performance can beobtained.

(3-5)-Th Embodiment

FIG. 32 illustrates another configuration of a chip according to thethird embodiment. FIG. 32 illustrates a state of a diced chip afterdicing, similarly to FIG. 29. A configuration of a chip 340 illustratedin FIG. 32 is basically the same as the configuration of the chip 310illustrated in FIG. 29 except a shape of a moisture resistant film.

In the chip 340 illustrated in FIG. 32, a rib 341-1 and a rib 341-2 areformed on the cross-sectional surface of the adhesive layer 80, and theadhesive layer 80 does not come into contact with the outside. The rib341 is preferably made of a photosensitive resin material that hastolerance such as heat resistance, is used to form a patterning or thelike, and has low in elastic modulus.

A first moisture resistant film 342-1 and a second moisture resistantfilm 343-1 are formed between the rib 341-1 and the microlens layer 79,the first moisture resistant film 342-1 and the second moistureresistant film 343-1 are formed even between the rib 341-1 and theadhesive layer 80, and the adhesive layer 80 does not come into contactwith the outside.

Similarly, a first moisture resistant film 342-2 and a second moistureresistant film 343-2 are formed between the rib 341-2 and the microlenslayer 79, the first moisture resistant film 342-2 and the secondmoisture resistant film 343-2 are formed even between the rib 341-2 andthe adhesive layer 80, and the adhesive layer 80 does not come intocontact with the outside.

As described above, the chip 340 according to the (3-5)-th embodimenthas the configuration in which the moisture resistant films are stacked.In the chip 340 illustrated in FIG. 32, two moisture resistant films arestacked as an example, and a configuration in which more moistureresistant films are stacked can be provided.

Further, the first moisture resistant film 342-2 and the second moistureresistant film 343-2 are moisture resistant films made of differentmaterials. For example, one of the first moisture resistant film 342-2and the second moisture resistant film 343-2 may be formed of a siliconnitride film, and the other may be formed of a silicon oxide film.

The silicon nitride film and the silicon oxide film have differentrefractive indices. As a plurality of films having different refractiveindices are stacked and formed, it is possible to induce opticalinterference and reflect incident light having an arbitrary wavelength,it is possible to prevent light from being incident on pixels which willbe described later with reference to FIGS. 34A and 34B, and it ispossible to reduce a flare or the like.

As the rib 341 and the moisture resistant film in which the firstmoisture resistant film 342 and the second moisture resistant film 343are stacked are formed at both ends of the adhesive layer 80 of the chip340 as described above, moisture can be prevented from intruding intothe adhesive layer 80. Further, as the moisture resistant films arestacked, it is possible to absorb and reflect unnecessary incident lightto thus reduce a flare or the like.

Further, as the rib 341 is formed, tolerance to an external shock or thelike is enhanced. In other words, when force is applied to the chip 340,the rib 341 can serve as a shock absorber and absorb a shock, and thustolerance to an external shock on the chip 340 or the like can beenhanced.

Further, even when a crack or the like occurs, the crack can be stoppedby the rib 341, and it is possible to prevent the moisture resistantfilm in which the first moisture resistant film 342 and the secondmoisture resistant film 343 are stacked from being broken. Furthermore,the moisture resistant film in which the first moisture resistant film342 and the second moisture resistant film 343 are stacked can bemaintained without being broken, and thus moisture-resistanceperformance can be improved.

Further, the moisture resistant film in which the first moistureresistant film 342 and the second moisture resistant film 343 arestacked can be formed at a thin thickness, film stress-induced influencecan be reduced, and thus sufficient moisture-resistance performance canbe obtained.

In addition, the shape of the moisture resistant film 322 of the chip320 illustrated in FIG. 30 according to the (3-3)-rd embodiment may beapplied to the chip 330 illustrated in FIG. 32 according to the (3-5)-thembodiment such that the moisture resistant film in which the firstmoisture resistant film 342 and the second moisture resistant film 343are stacked is formed even between the cover glass 81 and the adhesivelayer 80.

Further, the shape of the moisture resistant film 322 of the chip 330illustrated in FIG. 31 according to the (3-4)-th embodiment may beapplied to the chip 330 illustrated in FIG. 32 according to the (3-5)-thembodiment such that the moisture resistant film in which the firstmoisture resistant film 342 and the second moisture resistant film 343are stacked is formed even between the cover glass 81 and the adhesivelayer 80, and the moisture resistant film is shaped to include the wedgebeing fitted into a part of the cover glass 81.

(3-6)-Th Embodiment

FIG. 33 illustrates another configuration of a chip according to thethird embodiment. FIG. 33 illustrates a state of a diced chip afterdicing, similarly to FIG. 29. A configuration of a chip 350 illustratedin FIG. 33 is basically the same as the configuration of the chip 310illustrated in FIG. 29 except a material of a rib.

In the chip 350 illustrated in FIG. 33, a rib 351-1 and a rib 351-2 areformed on the side surfaces of the adhesive layer 80, and the adhesivelayer 80 does not come into contact with the outside. Further, amoisture resistant film 352-1 is formed between the rib 351-1 and themicrolens layer 79, the moisture resistant film 352-1 is formed evenbetween the rib 351-1 and the adhesive layer 80, and the adhesive layer80 does not come into contact with the outside.

Similarly, a moisture resistant film 352-2 is formed between the rib351-2 and the microlens layer 79, the moisture resistant film 352-2 isformed even between the rib 351-2 and the adhesive layer 80, and theadhesive layer 80 does not come into contact with the outside.

The rib 351 is made of a material of absorbing light of an arbitrarywavelength as in a black filter. As the rib 351 is made of a material ofabsorbing light of a certain wavelength, a flare or the like can bereduced.

Similarly to the above embodiment, the rib 351 is preferably made of aphotosensitive resin material that has tolerance such as heatresistance, is used to form a patterning or the like, and has low inelastic modulus. For example, the moisture resistant film 352 is a filmthat is made of a material having a function of preventing moisture fromintruding into the chip 350 such as a silicon nitride film.

As the rib 351 and the moisture resistant film 352 are formed at bothends of the adhesive layer 80 of the chip 350 as described above,moisture can be prevented from intruding into the adhesive layer 80.Further, as the rib 351 is formed, tolerance to an external shock or thelike is enhanced.

In other words, when force is applied to the chip 350, the rib 351 canserve as a shock absorber and absorb a shock, and thus tolerance to anexternal shock on the chip 350 or the like can be enhanced.

Further, even when a crack or the like occurs, the crack can be stoppedby the rib 351, and it is possible to prevent the moisture resistantfilm 352 from being broken. The moisture resistant film 352 can bemaintained without being broken, and thus improve moisture-resistanceperformance can be improved. Further, the moisture resistant film 352can be formed at a thin thickness, film stress-induced influence can bereduced, and thus sufficient moisture-resistance performance can beobtained.

Further, as the rib 351 is made of a material of absorbing light of acertain wavelength, a flare or the like can be reduced.

Further, the shape of the moisture resistant film 322 of the chip 320illustrated in FIG. 30 according to the (3-3)-rd embodiment may beapplied to the chip 350 illustrated in FIG. 33 according to the (3-6)-thembodiment such that the moisture resistant film 352 is formed evenbetween the cover glass 81 and the adhesive layer 80.

Further, the shape of the moisture resistant film 332 of the chip 330illustrated in FIG. 31 according to the (3-4)-th embodiment may beapplied to the chip 350 illustrated in FIG. 33 according to the (3-6)-thembodiment such that the moisture resistant film 352 is formed evenbetween the cover glass 81 and the adhesive layer 80, and the moistureresistant film 352 is shaped to include the wedge being fitted into apart of the cover glass 81.

Further, the moisture resistant film of the chip 340 illustrated in FIG.32 according to the (3-5)-th embodiment may be applied to the chip 350illustrated in FIG. 33 according to the (3-6)-th embodiment such thatthe moisture resistant film 352 is formed as the moisture resistant filmin which the first moisture resistant film 342 and the second moistureresistant film 343 having different refractive indices are stacked.

<Absorption of Light>

The configuration of the chip 340 illustrated in FIG. 32 according tothe (3-5)-th embodiment in which the moisture resistant films arestacked to absorb light of a certain wavelength will be described withreference to FIGS. 34A and 34B. Further, similarly, the configuration ofthe chip 350 illustrated in FIG. 33 according to the (3-6)-th embodimentin which the rib 351 is made of a material of absorbing light of acertain wavelength and absorbs light of a certain wavelength will bedescribed with reference to FIGS. 34A and 34B.

FIG. 34A illustrates the chip 70-1 illustrated in FIG. 3 (hereinafter,referred to as the “chip 70”) for a comparison. FIG. 34B illustrates thechip 350 illustrated in FIG. 33. The chip 70 illustrated in FIG. 34A andthe chip 350 illustrated in FIG. 34B are mounted in, for example, acamera system. In the camera system, there are various stray lightcomponents, and problems causing image quality deterioration such as aflare are likely to occur due to the stray light components.

For example, as indicated by thick arrows in FIG. 34A, when light isincident in the lateral direction of the chip 70, the light is likely tobe incident on the photodiode 74. Since there is no mechanism ofblocking light incident from the side in the chip 70, the light incidentfrom the side is likely to be incident on the photodiode 74 whilemaintaining its intensity. As described above, when stray light isincident on pixels, a flare image is generated, and thus an imagequality deteriorates.

On the other hand, when the rib 351 is formed, and the rib 351 is madeof a material of absorbing light of a certain wavelength as in a blackfilter as illustrated in FIG. 34B, for example, the rib 351 can absorblight incident from the side of the chip 350.

In other words, since the chip 350 has a mechanism of blocking lightincident form the side, intensity of the light is reduced, and thus evenwhen light is incident on the photodiode 74 from the side, a possibilityof a flare image can be reduced, and image quality deterioration can besuppressed. As described above, as the rib 351 is formed, it is possibleto block or reduce the stray light component and suppress image qualitydeterioration.

Even when the first moisture resistant film 342 and the second moistureresistant film 343 having different refractive indices are stacked as inthe chip 340 illustrated in FIG. 32, optical interference can beinduced, and it is consequently possible to reflect and reduce incidentlight of an arbitrary wavelength, and thus it is possible to block orreduce light incident from the side of the chip 340. Thus, in the caseof the chip 340, it is possible to block or reduce the stray lightcomponent and suppress image quality deterioration.

Manufacturing of Chip According to Third Embodiment

A process of manufacturing a chip (wafer) having such a groove will bedescribed. FIGS. 35 and 36 are diagrams for describing a process ofmanufacturing a chip prior to dicing.

A manufacturing process which will be described with reference to FIGS.35 and 36 will focus on a process of manufacturing a rib and a moistureresistant film that are characteristic components of the presenttechnology, and a process of manufacturing the other portion, forexample, a process of forming a layer can be performed using amanufacturing method of a related art, and thus a description thereofwill be omitted. Here, the description will proceed with an example ofmanufacturing the chip 320 illustrated in FIG. 29 according to the(3-3)-rd embodiment.

In step S301, the cover glass 81 is set up.

In step S302, the rib 321 is formed on the cover glass 81. The rib 321is formed on a glass wafer of the cover glass 81 using the lithographyprocess. For example, a material containing polyimide resin as a mainsolid component is dropped onto a glass wafer, a film is formed at athickness of 50 micrometers by a spin coating technique, and then awarming process is performed at a temperature of 120 degrees Celsiusduring 60 seconds to dry a solvent.

Then, light exposure is performed by an i-line exposure device, adevelopment process is performed using a water solution of TMAH of 2.38wt %, and a warming process is performed at a temperature of 200 degreesCelsius during 300 seconds, so that a film is sufficiently cured.

In step S302, a rib of a square form is formed when a rib of a squareform is formed such as the rib 301 of the chip 300 illustrated in FIG.27, and a rib of a trapezoidal shape is formed when a rib of atrapezoidal shape is formed such as the rib 321 of the chip 320illustrated in FIG. 30.

In step S303, when the film is cured, film forming is performed. In stepS303, a waterproof film, that is, a moisture resistant film 322 isformed. For example, the silicon nitride film serving as the moistureresistant film 322 is formed on the glass wafer with the pattern of therib 321. The film forming method can be performed, for example, by aplasma chemical vapor deposition (CVD) using a mixed gas species ofSiH₄, NH₃, and N₂ under the condition in which an atmosphere temperatureis 400 degrees Celsius, and HF power is 800 W.

In step S304, a pattern for protecting the pattern of the rib 321 isformed using the lithography process. For example, the forming methodcan be performed such that a resist material containing novolac resin asa main solid component is dropped onto the wafer, a film is formed at athickness of 100 micrometers by the spin coating technique, and awarming process is performed at a temperature of 100 degrees Celsiusduring 180 seconds to dry a solvent. Then, light exposure is performedby an i-line exposure device, a development process is performed using awater solution of TMAH of 2.38 wt %, and a warming process is performedat a temperature of 100 degrees Celsius during 180 seconds to dry asolvent.

In step S305, a dry etching process is performed to remove a portion ofsilicon nitride film excluding a portion on the pattern of the rib 321.For example, the etching process is performed using a mixed gas ofCF₄/O₂ under an etching condition in which bias power is 150 W, andsource power is 1000 W.

In step S306, the resist remaining on the pattern of the rib 321 isremoved, and thus a waterproof film structure is formed on the rib 321.For example, the removing of the resist may be performed such that athinner containing propylene glycol methyl ether as a main solventcomponent is dropped onto the wafer, then the wafer is rotated during120 seconds while dropping the thinner, and a warming process isperformed at 100 degrees Celsius during 120 seconds to dry a solvent.

The process of steps S304 to S306 is a process suitable for the shape ofa moisture resistant film 322. For example, when the moisture resistantfilm 322 is formed even between the cover glass 81 and the adhesivelayer 80 as in the chip 320 (FIG. 30), a portion on which the moistureresistant film 322 is desired to be formed is coated with a resist.

In step S307, an adhesive layer 80 is formed by coating the glass waferincluding the moisture resistant film 322 (waterproof film) structure onthe rib 321 with seal resin (an adhesive). For example, the forming ofthe adhesive layer 80 may be performed such that a material containingpolysiloxane resin as a main solid component is dropped onto the wafer,a film is formed at a thickness of 50 micrometers by the spin coatingtechnique, and thereafter a warming process is performed at 120 degreesCelsius during 1200 seconds to dry a solvent.

In step S308 (FIG. 36), a wafer in which the support substrate 71, theinterconnection layer 72, the silicon substrate 73, the planarizationfilm 75, the color filter layer 77, the planarization film 78, and themicrolens layer 79 are stacked, the photodiode 74 is formed in thesilicon substrate 73, and the light shielding film 76 is formed in theplanarization film 75 and a glass wafer in which the rib 321 and themoisture resistant film 322 are formed, and the adhesive layer 80 isformed are prepared.

In step S309, the wafer in which the elements are formed is bonded tothe glass wafer. For example, a vacuum bonding apparatus is used for thebonding, and the bonding is performed such that processing is performedduring 5 minutes under the condition in which a degree of vacuum is 1Pa, a load is 6.8 kN, and a temperature is 70 degrees Celsius, andbonding is performed without a void.

As illustrated in step S307 (FIG. 35) and step S309 (FIG. 36), theadhesive layer 80 is formed in a raised shape according to the shape ofthe rib 321. As the adhesive layer 80 is formed on the top surface ofthe rib 321 (the side serving as the microlens layer 79 side at the timeof bonding) as described above, an adhesive leaks into both ends of therib 321 at the time of bonding as indicated by arrows in step S309.

As the adhesive leaks into both ends of the rib 321, a space between theglass wafer in which the rib 321 is formed and the wafer in which theelements are formed is filled with the adhesive, and thus an adhesiondegree between the wafers can be increased.

Thus, it is possible to reduce a possibility that the moisture resistantfilm 322 will be peeled off, for example.

In step S310, in order to cure the seal resin, for example, the adhesivelayer 80, the curing process is performed at 200 degrees Celsius for 4hours at an air atmosphere, and thus film curing is sufficientlyperformed.

In step S311, rear through interconnections are formed. The rear throughinterconnections may be performed using a method of a related art.

In step S312, dicing is performed, so that a chip is diced.

As a result, the chip 320 including the rib 321 and the moistureresistant film 322 are manufactured.

In the chip according to the third embodiment, since the moistureresistant film can be formed at a thin thickness on the inner side ofthe outer periphery portion of the chip, it is possible to prevent theoccurrence of a crack or the like that is caused by an external shock orfilm stress applied when a chip is handled or mounted in a substrate,and thus it is possible to improve moisture resistance.

Further, since a structure and a material having light reflection orabsorption properties are used to form the moisture resistant film andthe rib, in addition to an improvement in moisture resistance, it ispossible to reduce a problem of a flare that passes through the sidewallportion of the chip in the horizontal direction and is incident onpixels, and thus an image quality can be improved.

Fourth Embodiment

In the fourth embodiment, intrusion of moisture into a chip is preventedsuch that a wall having moisture resistance made of metal is formed in acertain layer in a chip.

FIG. 37 illustrates a configuration of a chip according to the fourthembodiment.

Similarly to the chip 70 illustrated in FIG. 3, a chip 400 illustratedin FIG. 37 has a structure in which certain layers are stacked andincludes the same layers, but since the fourth embodiment relates to aninterconnection, an electrode, and the like formed in the supportsubstrate 71 or the interconnection layer 72, a drawing different fromthat of the chip 70 illustrated in FIG. 3 is illustrated, and the samelayers are denoted by the same reference numerals, and thus adescription thereof is appropriately omitted.

The fourth embodiment will be described with an example in which thechip 400 is divided into 4 layers. In FIG. 37, a cover glass 81, anadhesive layer 80, a first layer 401, and a second layer 402 are stackedin order from the top. The first layer 401 includes a microlens layer79, a color filter layer 77, a photodiode 74, and the like, and thesecond layer 402 includes an interconnection layer 72 or a supportsubstrate 71.

The first layer 401 includes a through-CIS-via (TCV) 403-1 and a TCV403-2. Signal lines and power lines of a (1-1)-st layer and a (1-2)-ndlayer that are stacked are electrically connected by the TCV 403.

The second layer 402 includes a through silicon via (TSV) 404-1 and aTSV 404-2. Signal lines and power lines of the first layer 401 and thesecond layer 402 that are stacked are electrically connected by the TSV404. The connection terminal 405 for a connection with an externalcircuit is formed below the second layer 402.

The chip 400 further includes a sidewall protecting portion 406-1 and asidewall protecting portion 406-2 formed on both ends of the chip 400.The sidewall protecting portion 406 is formed to prevent intrusion ofmoisture from the side of the chip 400. FIG. 38 illustrates the enlargedsidewall protecting portion 406.

FIG. 38 is an enlarged view illustrating the sidewall protecting portion406. The sidewall protecting portion 406 is formed to penetrate theadhesive layer 80, the first layer 401, and the second layer 402. Theinner side of the sidewall protecting portion 406 is formed of a soldermask 421, and the outer side thereof is formed of an interconnection422.

As will be described later, the sidewall protecting portion 406 isformed by two processes of a process of forming the TCV 403 (the firstthrough electrode) and a process of forming the TSV 404 (the secondthrough electrode). Since the sidewall protecting portion 406 is formedby two processes, the sidewall protecting portion 406 is shaped to havea narrow part in the middle as illustrated in FIG. 38.

A manufacturing process of forming the sidewall protecting portion 406will be described. The manufacturing process described below will focuson manufacturing of the sidewall protecting portion 406 serving as oneof characteristic components of the present technology, and amanufacturing method of a related art can be applied to manufacturing ofother parts such as forming of layers, and thus a description thereofwill be appropriately omitted.

(4-1)-St Embodiment

A process of manufacturing the chip 400 will be described with referenceto FIGS. 39 and 40.

In step S401, a space 441 for forming the sidewall protecting portion406 is formed in a first layer 401. In step S401, the first layer 401 inwhich the color filter layer 77 and the microlens layer 79 are notstacked yet but the photodiode 74 is already formed is prepared.

In step S401, the TCV 403 is also formed. In other words, in order toform the TCV 403, when silicon etching is performed, etching for the TCV403 is performed, and the space 441 for forming the sidewall protectingportion 406 is formed by etching.

As described above, in the fourth embodiment, the process of forming theTCV 403 and the process of forming a part of the sidewall protectingportion 406 are included, and thus the sidewall protecting portion 406can be formed without performing a new process.

In step S402, custom forming is performed. In step S402, the colorfilter layer 77, the microlens layer 79, and the like included in thefirst layer 401 are formed. Further, the adhesive layer 80 is formed.

In step S403, the cover glass 81 is bonded to the first layer 401. Then,in step S404, the support substrate 71 in the second layer 402 isthinned. In FIG. 39, steps S401 to S403 are different in scale from stepS404. Further, in step S404, the substrate has been turned upside down,and the cover glass 81 is positioned at the lower side.

In the chip 400 in steps S401 to S404, the space 441 remains hollow. Asillustrated in step S404, since the sidewall protecting portion 406 isformed at both ends of the chip 400, the space 441 is also formed atboth ends of the chip 400.

In other words, in the example illustrated in FIG. 39, the space 441-1and the space 441-2 are formed at both ends of the chip 400.

In step S405 (FIG. 40) and step S406, a TSV 404 is formed. The TSV 404is formed such that a through hole for opening an interconnectionportion of a multi-layer interconnection (not illustrated) formed on asemiconductor wafer surface is formed by etching.

Then, an insulating film such as a silicon oxide film is formed, theinsulating film of the through hole is opened by etching, a throughelectrode is formed in the through hole, for example, by Cu plating, andan interconnection is formed on a surface (a back surface) of a sideopposite to a translucent substrate of the semiconductor wafer.

Then, a solder resist serving as an insulating member is formed on theback surface of the semiconductor wafer, an opening is formed above theinterconnection, and in step S407, a solder ball serving as theconnection terminal 405 is formed.

As a result, the TSV 404 is formed. In the fourth embodiment, when theTSV 404 is formed, a portion forming the sidewall protecting portion 406is formed as well. In other words, in step S405, a space 442 and a space443 for forming a part of the sidewall protecting portion 406 areformed.

The space 442-1 positioned above the space 441-1 in the second layer 402is formed, and the space 443-1 positioned above the space 441-1 in theadhesive layer 80 is formed. Similarly, the space 442-2 positioned abovethe space 441-2 in the second layer 402 is formed, and the space 443-2positioned above the space 441-2 in the adhesive layer 80 is formed.

As the space 441, the space 442, and the space 443 are formed asdescribed above, one space penetrating the adhesive layer 80, the firstlayer 401, and the second layer 402 is formed. The space 442 and thespace 443 are formed together at the time of etching in the process offorming the TSV 404.

Further, in step S406, the sidewall protecting portion 406 can be formedsuch that when the insulating film and the through electrode are formedin order to form the TSV 404, the insulating film and metal for formingthe through electrode are formed even in the space formed by the space441, the space 442, and the space 443.

As described above, in the fourth embodiment, the process of forming theTSV 404 and the process of forming a part of the sidewall protectingportion 406 are included, and thus the sidewall protecting portion 406can be formed without performing a new process.

When the TCV 403 is formed in step S401 and when the TSV 404 is formedin step S405, excavating for forming the sidewall protecting portion 406is performed. When excavating for forming the TCV 403 in step S401 isassumed to be downward excavating, excavating for forming the TSV 404 instep S405 is excavating in a state in which the wafer in step S401 isturned upside down, that is, upward excavating.

The sidewall protecting portion 406 is performed by performingexcavating twice as described above, but the excavating is performedtwice in different directions. Due to the difference in the direction ofthe excavating, the sidewall protecting portion 406 has a shape with anarrow part in the middle as described above with reference to FIG. 38.

As described above, in the fourth embodiment, the sidewall protectingportion 406 is formed on the side of the chip 400, and thus it ispossible to prevent intrusion of moisture into the chip 400 andcondensation in a sensor.

Further, since the sidewall protecting portion 406 is formed on the sideof the chip 400, it is possible to prevent intrusion of necessary lightfrom the side of the chip 400.

Further, since the sidewall protecting portion 406 is formed by twosteps, processing of the sidewall protecting portion 406 is easy.Furthermore, since the processing of the sidewall protecting portion 406can be performed together with another processing, that is, theprocessing of the TCV or the TSV in the above example, the sidewallprotecting portion 406 can be formed without increasing the number ofprocessing.

(4-2)-Nd Embodiment

Another manufacturing process of the chip 400 will be described withreference to FIGS. 41 and 42.

In step S421, a space 461 for forming the sidewall protecting portion406 is formed in a first layer 401. The process in step S421 can beperformed, similarly to step S401 illustrated in FIG. 39.

In step S422, custom forming is performed. Step S422 can be alsoperformed, similarly to step S402 of FIG. 39, but step S422 is differentin that material 471 of the adhesive layer 80 is poured into the formedspace 461.

In other words, in step S422, the color filter layer 77 and themicrolens layer 79 are formed, and the adhesive layer 80 is formed, butwhen the adhesive layer 80 is formed, the space 461 is also filled withthe material 471 of the adhesive layer 80.

For example, the space 461 may be filled with the material 471 such thatwhen the color filter layer 77, the microlens layer 79, and the like areformed, no film is formed in the space 461, or a film is formed in thespace 461 and then moved, and then the adhesive layer 80 is poured intothe space 461.

As described above, in the (4-2)-nd embodiment, after the space 461 isformed, the space 461 is filled with the material 471.

In step S423, the cover glass 81 is bonded, and in step S424, thesupport substrate 71 in the second layer 402 is thinned. The process ofsteps S423 and S424 is performed, similarly to the process of steps S403and S404.

In FIG. 41, steps S421 to S423 are different in scale from step S424.Further, in step S424, the substrate has been turned upside down, andthe cover glass 81 is positioned at the lower side.

In steps S422 to S424, in the chip 400, the space 461 is filled with thematerial 471. Further, as illustrated in step S424, since the sidewallprotecting portion 406 is formed at both ends of the chip 400, the space461 is also formed at both ends of the chip 400.

In other words, in the example illustrated in FIG. 41, the space 461-1and the space 461-2 are formed at both ends of the chip 400 and filledwith the material 471 that is the same material as the adhesive layer80.

In step S425 (FIG. 42), a TSV 404 is formed. When a portion for formingthe TSV 404 is excavated, a space 462 for the sidewall protectingportion 406 is formed together.

In other words, similarly to step S405, in the process of forming theTSV 404, the portion for forming the sidewall protecting portion 406 isalso etched at the time of etching, and the space 462-1 and the space462-2 are formed. At this time, the material 471 is etched together, andthe space 462 is formed.

As a result, one space 462 penetrating the adhesive layer 80, the firstlayer 401, and the second layer 402 are formed in the process of formingthe TSV 404.

Further, in step S426, the sidewall protecting portion 406 can be formedsuch that when the insulating film and the through electrode are formedin order to form the TSV 404, the insulating film and metal for formingthe through electrode are formed even in the space 462.

As described above, in the fourth embodiment, the process of forming theTSV 404 and the process of forming a part of the sidewall protectingportion 406 are included, and thus the sidewall protecting portion 406can be formed without performing a new process.

In the (4-2)-nd embodiment, when the TCV 403 is formed in step S421 andwhen the TSV 404 is formed in step S425, excavating for forming thesidewall protecting portion 406 is performed. When excavating forforming the TCV 403 in step S421 is assumed to be downward excavating,excavating for forming the TSV 404 in step S425 is excavating in a statein which the wafer in step S421 is turned upside down, that is, upwardexcavating.

The sidewall protecting portion 406 is performed by performingexcavating twice as described above, but the excavating is performedtwice in different directions. Due to the difference in the direction ofthe excavating, the sidewall protecting portion 406 has a shape with anarrow part in the middle as described above with reference to FIG. 38.

As described above, in the fourth embodiment, the sidewall protectingportion 406 is formed on the side of the chip 400, and thus it ispossible to prevent intrusion of moisture into the chip 400 andcondensation in a sensor.

Further, since the sidewall protecting portion 406 is formed on the sideof the chip 400, it is possible to prevent intrusion of necessary lightfrom the side of the chip 400.

Further, since the sidewall protecting portion 406 is formed by twosteps, processing of the sidewall protecting portion 406 is easy.Furthermore, since the processing of the sidewall protecting portion 406can be performed together with another processing, that is, theprocessing of the TCV or the TSV in the above example, the sidewallprotecting portion 406 can be formed without increasing the number ofprocessing.

(4-3)-Rd Embodiment

Another manufacturing process of the chip 400 will be described withreference to FIGS. 43 and 44.

In step S441, a space 481 for forming the sidewall protecting portion406 is formed in a first layer 401. The process in step S441 can beperformed, similarly to step S401 illustrated in FIG. 39.

In step S442, a material 491 is poured into the space 481. The material491 is a material that is different from a material of the adhesivelayer 80 and easily processed by etching or the like.

In step S443, custom forming is performed. Step S443 can be alsoperformed, similarly to step S402 of FIG. 39, but step S442 is differentin that the material 491 is poured into the formed space 481 before stepS443.

As described above, in the (4-3)-rd embodiment, after the space 481 isformed, the space 481 is filled with the material 491.

In step S444, the cover glass 81 is bonded, and in step S445 (FIG. 44),the support substrate 71 in the second layer 402 is thinned. The processof steps S444 and S445 is performed, similarly to the process of stepsS403 and step S404.

In FIG. 43, steps S441 to S444 are different in scale from step S445.Further, in step S445, the substrate has been turned upside down, andthe cover glass 81 is positioned at the lower side.

In steps S443 to S445, in the chip 400, the space 481 is filled with thematerial 491. Further, as illustrated in step S445, since the sidewallprotecting portion 406 is formed at both ends of the chip 400, the space481 is also formed at both ends of the chip 400.

In other words, in the example illustrated in FIG. 44, the space 481-1and the space 481-2 are formed at both ends of the chip 400, and thespaces 481 are filled with the material 491-1 and the material 491-2that is an easily etched material.

In step S446, a TSV 404 is formed. When a portion for forming the TSV404 is excavated, a space 482 for the sidewall protecting portion 406 isformed together.

In other words, similarly to step S405 (FIG. 40), in the process offorming the TSV 404, the portion for forming the sidewall protectingportion 406 is also etched at the time of etching, and the space 482-1and the space 482-2 are formed. At this time, the material 491 is alsoremoved by etching together.

As a result, one space 482 penetrating the adhesive layer 80, the firstlayer 401, and the second layer 402 are formed in the process of formingthe TSV 404. At this time, since a material that is easily processed byetching or the like is used as the material 491, the space 482 can beeasily formed.

Further, in step S447, the sidewall protecting portion 406 can be formedsuch that when the insulating film and the through electrode are formedin order to form the TSV 404, the insulating film and metal for formingthe through electrode are formed even in the space 482.

As described above, in the fourth embodiment, the process of forming theTSV 404 and the process of forming a part of the sidewall protectingportion 406 are included, and thus the sidewall protecting portion 406can be formed without performing a new process.

In the (4-3)-rd embodiment, when the TCV 403 is formed in step S441 andwhen the TSV 404 is formed in step S446, excavating for forming thesidewall protecting portion 406 is performed. When excavating forforming the TCV 403 in step S441 is assumed to be downward excavating,excavating for forming the TSV 404 in step S446 is excavating in a statein which the wafer in step S441 is turned upside down, that is, upwardexcavating.

The sidewall protecting portion 406 is performed by performingexcavating twice as described above, but the excavating is performedtwice in different directions. Due to the difference in the direction ofthe excavating, the sidewall protecting portion 406 has a shape with anarrow part in the middle as described above with reference to FIG. 38.

As described above, in the fourth embodiment, the sidewall protectingportion 406 is formed on the side of the chip 400, and thus it ispossible to prevent intrusion of moisture into the chip 400 andcondensation in a sensor.

Further, since the sidewall protecting portion 406 is formed on the sideof the chip 400, it is possible to prevent intrusion of necessary lightfrom the side of the chip 400.

Further, since the sidewall protecting portion 406 is formed by twosteps, processing of the sidewall protecting portion 406 is easy.Furthermore, since the processing of the sidewall protecting portion 406can be performed together with another processing, that is, theprocessing of the TCV or the TSV in the above example, the sidewallprotecting portion 406 can be formed without increasing the number ofprocessing.

Fifth Embodiment

In the fifth embodiment, intrusion of moisture into a chip is preventedsuch that a wall having moisture resistance made of metal is formed in acertain layer in a chip.

(5-1)-St Embodiment

FIG. 45 illustrates a configuration of a chip according to the fifthembodiment. FIG. 45 illustrates a wafer that includes a plurality ofchips (three chips in FIG. 45) and is not diced yet, similarly to FIG.2.

Here, a chip positioned at the center is referred to as a “chip 500-1,”a chip positioned at the left is referred to as a “chip 500-2,” and achip positioned at the right is referred to as a “chip 500-3.” In thefollowing description, when the chips 500-1 to 500-3 need not bedistinguished from one another, the chips are referred to as simply a“chip 500.”

Each chip 500 has the same configuration as the chip 70 described abovewith reference to FIGS. 2 and 3. In other words, the chip 500 isconfigured such that an interconnection layer 72 is arranged on asupport substrate 71, and a silicon substrate 73 is arranged on theinterconnection layer 72. In the silicon substrate 73, a plurality ofphotodiodes 74 (optical elements) serving as photoelectric conversionunits of pixels are formed at certain intervals.

The planarization film 75 is formed on the silicon substrate 73, and alight shielding film 76 for preventing light from leaking into aneighboring pixel is formed in a portion of the planarization film 75corresponding to a position between the photodiodes 74. A color filterlayer 77 is formed on the planarization film 75. A planarization film 78is formed on the color filter layer 77. A microlens layer 79 is formedon the planarization film 78. A cover glass 81 is bonded onto themicrolens layer 79 through an adhesive layer 80.

In the wafer illustrated in FIG. 45, a groove 502 is formed between thechips 500. The groove 502-1 is formed between the chip 500-1 and thechip 500-2, and the groove 502-2 is formed between the chip 500-1 andthe chip 500-3.

A moisture resistant film 501-1 is formed in the groove 502-1, and amoisture resistant film 501-2 is formed in the groove 502-2. Themoisture resistant film 501 is preferably a film with a highmoisture-proof property made of an inorganic material such as a SiNfilm. Since moisture is likely to intrude into a light receiving device(chip) to cause a problem such as image quality deterioration dependingon conditions of humidity, temperature, or the like, the moistureresistant film 501 is formed to protect the end face of the lightreceiving device.

There is a scribe section 91-1 between the chip 500-1 and the chip500-2, and the groove 502-1 is formed in the scribe section 91-1.Similarly, there is a scribe section 91-2 between the chip 500-1 and thechip 500-3, and the groove 502-2 is formed in the scribe section 91-2.

In the chip 500 illustrated in FIG. 45, the groove 502 is formed suchthat the cover glass 81, the adhesive layer 80, the microlens layer 79,the planarization film 78, the color filter layer 77, and theplanarization film 75 are excavated up to an upper portion of thesilicon substrate 73.

Further, since the moisture resistant film 501 is formed in the groove502, the moisture resistant film 501 is formed on the side surfaces ofthe cover glass 81, the adhesive layer 80, the microlens layer 79, theplanarization film 78, the color filter layer 77, and the planarizationfilm 75 and the upper portion of the silicon substrate 73.

As will be described later, at the time of manufacturing, the groove 502is formed after the cover glass 81 is bonded, and the moisture resistantfilm 501 is formed after the groove 502 is formed.

When the wafer in which the groove 502 is formed between the chips 500is diced along the scribe section 91, the chip 500-1 illustrated in FIG.46 is cut out. In the chip 500-1 illustrated in FIG. 46, thecross-sectional surfaces of the cover glass 81, the adhesive layer 80,the microlens layer 79, the planarization film 78, the color filterlayer 77, and the planarization film 75 are covered with the moistureresistant film 501 and thus not exposed on the surface. Further, themoisture resistant film 501 is positioned on the top surface of thesilicon substrate 73.

As described above, the diced chip 500-1 has a structure in which partsof the stacked layers of the chip 500-1 are covered with the moistureresistant film 501-1 and the moisture resistant film 501-2 formed in thegroove 502-1′ and the groove 502-2′ (a dash is added to the groovesafter dicing in order to be distinguished from the groove 502-1 and thegroove 502-2 before dicing illustrated in FIG. 45).

Since the diced chip 500-1 is configured such that the groove 502-1′ andthe groove 502-2′ remain, and the moisture resistant film 501 remains inthe groove 502-1′ and the groove 502-2′ as described above, a width ofthe groove 502-1 or the groove 502-2 between the chips 500 before dicing(a width of the moisture resistant film 501 formed on the top surface ofthe silicon substrate 73 of the moisture resistant film 501) ispreferably larger than a width of a blade used in the dicing process.

As the groove 502 is formed, and the moisture resistant film 501 isformed on the inner side of the groove 502 as described above, themoisture-proof performance can be further improved.

The groove 502 (the groove 502′) illustrated in FIGS. 45 and 46 isformed to reach the top surface of the silicon substrate 73, but thegroove 502 may be formed such that an up to the silicon substrate 73 isexcavated. In other words, as illustrated in FIG. 47, a groove may beformed such that an up to a part of the silicon substrate 73 isexcavated, and a moisture resistant film 511-1 and a moisture resistantfilm 511-2 may be formed in the groove.

As the moisture resistant film 511 is formed as described above, theside of the interface between the silicon substrate 73 and theplanarization film 75 is also covered with the moisture resistant film511, and thus the moisture-proof performance of the chip can be furtherimproved.

The following description will proceed with the example of the chip 500illustrated in FIGS. 45 and 46.

Manufacturing of Chip According to (5-1)-St Embodiment

A process of manufacturing a chip (wafer) having such a groove will bedescribed. FIG. 48 is a diagram for describing a process ofmanufacturing a chip prior to dicing. The manufacturing processdescribed with reference to FIG. 48 will focus on manufacturing of agroove and a moisture resistant film serving as one of characteristiccomponents of the present technology, and a manufacturing method of arelated art can be applied to manufacturing of other parts such asforming of layers, and thus a description thereof will be appropriatelyomitted.

In step S501, the wafer illustrated in FIG. 2 is prepared such that thesemiconductor wafer in which the photodiode 74 and the like are formedis bonded to the cover glass 81.

In step S502, the groove 502 is formed. For example, the groove 502 isformed by performing dicing from the cover glass 81 side. Alternatively,the groove 502 may be formed by a technique such as dry etching or wetetching.

In step S502, the groove 502 is formed such that the cover glass 81, theadhesive layer 80, the microlens layer 79, the planarization film 78,the color filter layer 77, and the planarization film 75 are excavated.

Further, when the groove 502 is formed up to a part of the siliconsubstrate 73, and the moisture resistant film 501 is formed as in thechip 510 illustrated in FIG. 47, in step S502, up to the part of thesilicon substrate 73 is excavated.

In step S503, a material of the moisture resistant film 501 is coated,and a curing process is performed, so that the moisture resistant film501 is formed. Through the film forming in step S503, the moistureresistant film 501-1 is formed in the groove 502-1, and the moistureresistant film 501-2 is formed in the groove 502-2. Further, themoisture resistant film 501-3 is formed even on the top surface of thecover glass 81.

The moisture resistant film 501-3 formed on the top surface of the coverglass 81 is unnecessary and thus removed in step S504. In step S504, forexample, the moisture resistant film 501-3 formed on the top surface ofthe cover glass 81 is removed by a chemical mechanical polishing (CMP)technique.

A wafer obtained by removing the moisture resistant film 501-3 in stepS504 is a wafer illustrated in FIG. 45.

In step S505, dicing is performed. The wafer illustrated in FIG. 45 isdiced at the positions of the scribe section 91-1 and the scribe section91-2, and thus the diced chip 500-1, the chip 500-2, and the chip 500-3are manufactured. In step S505, the dicing is performed from the supportsubstrate 71 side.

The chip dicing is performed such that cutting is performed from thecover glass 81 side, and cutting is performed from the support substrate71 side. In other words, the dicing is performed such that upwardcutting and downward cutting are separately performed.

As described above, in the manufacturing process of the chip accordingto the (5-1)-st embodiment, in step S502, dicing (or processingcorresponding to dicing) is performed in order to form the groove 502.Since the process of step S502 includes processing for cutting from thecover glass 81 side, the groove 502 can be formed without adding a newprocess for forming the groove 502.

Further, step S505 is dicing of separating the remaining portions, andthe cutting process performed from the support substrate 71 side. Thus,dicing can be performed without increasing the processing man-hoursrelated to dicing.

As the moisture resistant film 511 is formed as described above, themoisture-proof performance of the chip can be further improved.

(5-2)-Nd Embodiment

FIG. 49 illustrates another configuration of a chip according to thefifth embodiment. FIG. 49 illustrates a wafer that includes a pluralityof chips (three chips in FIG. 49) and is not diced yet, similarly toFIG. 45.

Here, a chip positioned at the center is referred to as a “chip 520-1,”a chip positioned at the left is referred to as a “chip 520-2,” and achip positioned at the right is referred to as a “chip 520-3.” In thefollowing description, when the chips 520-1 to 520-3 need not bedistinguished from one another, the chips are referred to as simply a“chip 520.”

Each chip 520 has the same configuration as the chip 500 described abovewith reference to FIG. 45 except a configuration of a film formed in thegroove 502.

In the wafer illustrated in FIG. 49, a groove 523 is formed between thechips 520. The groove 523-1 is formed between the chip 520-1 and thechip 520-2, and the groove 523-2 is formed between the chip 520-1 andthe chip 520-3.

A moisture resistant film 521-1 and a metallic film 522-1 are formed inthe groove 523-1, and a moisture resistant film 521-2 and a metallicfilm 522-2 are formed in the groove 523-2.

The moisture resistant film 521 is preferably a film with a highmoisture-proof property made of an inorganic material such as a SiNfilm. Since moisture is likely to intrude into a light receiving device(chip) to cause a problem such as image quality deterioration dependingon conditions of humidity, temperature, or the like, the moistureresistant film 521 is formed to protect the end face of the lightreceiving device.

The metallic film 522 is made of metal, and formed to block lightincident on the side of the chip 520 or reduce intensity of the light.

Here, the description proceeds with the example in which the moistureresistant film 521 and the metallic film 522 are stacked, but when themetallic film 522 has moisture-resistance performance, only the metallicfilm 522 may be formed in the groove 523 without the moisture resistantfilm 521.

There is a scribe section 91-1 between the chip 520-1 and the chip520-2, and the groove 523-1 is formed in the scribe section 91-1.Similarly, there is a scribe section 91-2 between the chip 520-1 and thechip 520-3, and the groove 523-2 is formed in the scribe section 91-2.

In the chip 520 illustrated in FIG. 49, the groove 523 is formed suchthat the cover glass 81, the adhesive layer 80, the microlens layer 79,the planarization film 78, the color filter layer 77, and theplanarization film 75 are excavated up to an upper portion of thesilicon substrate 73.

Further, since the moisture resistant film 521 is formed in the groove523, the moisture resistant film 521 is formed on the side surfaces ofthe cover glass 81, the adhesive layer 80, the microlens layer 79, theplanarization film 78, the color filter layer 77, and the planarizationfilm 75 and the top surface of the silicon substrate 73.

Further, since the metallic film 522 is stacked on the moistureresistant film 521, the metallic film 522 is formed on the side surfaceof the cover glass 81, the adhesive layer 80, the microlens layer 79,the planarization film 78, the color filter layer 77, and theplanarization film 75 and the top surface of the silicon substrate 73.

As will be described later, at the time of manufacturing, the groove 523is formed after the cover glass 81 is bonded, and the moisture resistantfilm 521 and the metallic film 522 are formed after the groove 523 isformed.

When the wafer in which the groove 523 is formed between the chips 520is diced along the scribe section 91, the chip 520-1 illustrated in FIG.50 is cut out. In the chip 520-1 illustrated in FIG. 50, thecross-sectional surfaces of the cover glass 81, the adhesive layer 80,the microlens layer 79, the planarization film 78, the color filterlayer 77, and the planarization film 75 are covered with the moistureresistant film 521 and the metallic film 522 and thus not exposed on thesurface. Further, the moisture resistant film 521 and the metallic film522 are positioned on the top surface of the silicon substrate 73.

As described above, the diced chip 520-1 has a structure in which partsof the stacked layers of the chip 520-1 are covered with the moistureresistant film 521-1 and the moisture resistant film 521-2 formed in thegroove 523-1′ and the groove 523-2′ (a dash is added to the groovesafter dicing in order to be distinguished from the groove 523-1 and thegroove 523-2 before dicing illustrated in FIG. 49).

Further, the diced chip 520-1 has a structure in which parts of thestacked layers of the chip 520-1 are covered with the metallic film522-1 and the metallic film 522-2 formed in the groove 523-1′ and thegroove 523-2′.

Since the diced chip 520-1 is configured such that the groove 523-1′ andthe groove 523-2′ remain, and the moisture resistant film 521 and themetallic film 522 remains in the groove 523-1′ and the groove 523-2′ asdescribed above, a width of the groove 523-1 or the groove 523-2 betweenthe chips 520 before dicing (a width of the moisture resistant film 521and the metallic film 522 formed on the top surface of the siliconsubstrate 73) is preferably larger than a width of a blade used in thedicing process.

As the groove 523 is formed, and the moisture resistant film 521 isformed on the inner side of the groove 523 as described above, themoisture-proof performance can be further improved.

Further, the chip 520 illustrated in FIG. 49 is mounted in, for example,a camera system. In the camera system, there are various stray lightcomponents, and problems causing image quality deterioration such as aflare are likely to occur due to the stray light components.

When light is incident in the lateral direction of the chip in which themetallic film 522 is not formed, for example, the chip 70 illustrated inFIG. 3, the light is likely to be incident on the photodiode 74. Sincethere is no mechanism of blocking light incident from the side in thechip 70, the light incident from the side is likely to be incident onthe photodiode 74 while maintaining its intensity. As described above,when stray light is incident on pixels, a flare image is generated, andthus an image quality deteriorates.

On the other hand, when the metallic film 522 is formed, and themetallic film 522 is made of a material of blocking light of a certainwavelength as illustrated in FIG. 50, for example, the metallic film 522can block light incident from the side of the chip 520.

In other words, since the chip 520 has a mechanism of blocking lightincident form the side, intensity of the light is reduced, and thus evenwhen light is incident on the photodiode 74 from the side, a possibilityof a flare image can be reduced, and image quality deterioration can besuppressed. As described above, as the metallic film 522 is formed, itis possible to block or reduce the stray light component and suppressimage quality deterioration.

FIGS. 49 and 50 illustrate the state in which the groove 523 (the groove523′) reaches up to the top surface of the silicon substrate 73, but thegroove 523 (the groove 523′) may be formed such that up to the siliconsubstrate 73 is excavated. In other words, as illustrated in FIG. 51, agroove 533 may be formed such that up to a part of the silicon substrate73 is excavated, and a moisture resistant film 531-1, a moistureresistant film 531-2, a metallic film 532-1, and a metallic film 532-2are formed in the groove 533.

As the moisture resistant film 531 and the metallic film 532 are formedas described above, the side surfaces of the silicon substrate 73 andthe planarization film 75 are also covered with the moisture resistantfilm 531 and the metallic film 532, and thus the moisture-proofperformance and the light-shielding performance of the chip can befurther improved.

The following description will proceed with the example of the chip 520illustrated in FIGS. 49 and 50.

Manufacturing of Chip According to (5-2)-Nd Embodiment

A process of manufacturing a chip (wafer) having such a groove will bedescribed. FIG. 52 is a diagram for describing a process ofmanufacturing a chip prior to dicing. The manufacturing processdescribed with reference to FIG. 52 will focus on manufacturing of agroove and a moisture resistant film serving as one of characteristiccomponents of the present technology, and a manufacturing method of arelated art can be applied to manufacturing of other parts such asforming of layers, and thus a description thereof will be appropriatelyomitted.

In step S521, the wafer illustrated in FIG. 2 is prepared such that thesemiconductor wafer in which a photodiode 74 and the like are formed isbonded to the cover glass 81. In step S522, the groove 523 is formed.

For example, the groove 523 is formed by performing dicing from thecover glass 81 side. Alternatively, the groove 523 may be formed by atechnique such as dry etching or wet etching.

In step S522, the groove 523 is formed such that the cover glass 81, theadhesive layer 80, the microlens layer 79, the planarization film 78,the color filter layer 77, and the planarization film 75 are excavated.

Further, when the groove 523 is formed up to a part of the siliconsubstrate 73, and the moisture resistant film 521 and the metallic film522 are formed as in the chip 510 illustrated in FIG. 51, in step S523,up to the part of the silicon substrate 73 is excavated.

In step S523, a material of the moisture resistant film 521 is coated,and a curing process is performed, so that the moisture resistant film521 is formed. In step S524, the metallic film 522 is formed. Throughthe film forming in steps S523 and S524, the moisture resistant film521-1 and the metallic film 522-1 are formed in the groove 523-1, andthe moisture resistant film 521-2 and the metallic film 522-2 are formedin the groove 523-2.

Further, the moisture resistant film 521-3 and the metallic film 522-3are formed even on the top surface of the cover glass 81. The moistureresistant film 521-3 and the metallic film 522-3 formed on the topsurface of the cover glass 81 is unnecessary and thus removed in stepS525. In step S525, for example, the moisture resistant film 521-3 andthe metallic film 522-3 formed on the top surface of the cover glass 81are removed by a chemical mechanical polishing (CMP) technique.

A wafer obtained by removing the moisture resistant film 521-3 and themetallic film 522-3 in step S525 is a wafer illustrated in FIG. 49.

In step S525, dicing is performed. The wafer illustrated in FIG. 49 isdiced at the positions of the scribe section 91-1 and the scribe section91-2, and thus the diced chip 520-1, the chip 520-2, and the chip 520-3are manufactured. In step S525, the dicing is performed from the supportsubstrate 71 side.

The chip dicing is performed such that cutting is performed from thecover glass 81 side, and cutting is performed from the support substrate71 side. In other words, the dicing is performed such that upwardcutting and downward cutting are separately performed.

As described above, in the manufacturing process of the chip accordingto the (5-2)-nd embodiment, in step S522, dicing (or processingcorresponding to dicing) is performed in order to form the groove 523.

Since the process of step S522 includes processing for cutting from thecover glass 81 side, the groove 523 can be formed without adding a newprocess for forming the groove 523.

Further, step S525 is dicing of separating the remaining portions, andthe cutting process performed from the support substrate 71 side. Thus,dicing can be performed without increasing the processing man-hoursrelated to dicing.

As the moisture resistant film 521 is formed as described above, themoisture-proof performance of the chip can be further improved.

Further, as the metallic film 522 is formed, light-shielding performanceon stray light incident on the chip can be further improved, and a flareor the like can be prevented.

Sixth Embodiment

In the sixth embodiment, a certain layer in a chip is surrounded by awall with moisture resistance such as glass to prevent intrusion ofmoisture into a chip.

(6-1)-St Embodiment

FIG. 53 illustrates a configuration of a chip according to the sixthembodiment. FIG. 53 illustrates a wafer that includes a plurality ofchips (three chips in FIG. 53) and is not diced yet, similarly to FIG.2.

Here, a chip positioned at the center is referred to as a “chip 610-1,”a chip positioned at the left is referred to as a “chip 610-2,” and achip positioned at the right is referred to as a “chip 610-3.” In thefollowing description, when the chips 610-1 to 610-3 need not bedistinguished from one another, the chips are referred to as simply a“chip 610.”

Each chip 610 has the same configuration as the chip 70 described abovewith reference to FIGS. 2 and 3. In other words, the chip 610 isconfigured such that an interconnection layer 72 is arranged on asupport substrate 71, and a silicon substrate 73 is arranged on theinterconnection layer 72. In the silicon substrate 73, a plurality ofphotodiodes 74 (optical elements) serving as photoelectric conversionunits of pixels are formed at certain intervals.

The planarization film 75 is formed on the silicon substrate 73, and alight shielding film 76 for preventing light from leaking into aneighboring pixel is formed in a portion of the planarization film 75corresponding to a position between the photodiodes 74. A color filterlayer 77 is formed on the planarization film 75. A planarization film 78is formed on the color filter layer 77. A microlens layer 79 is formedon the planarization film 78. A cover glass 81 is bonded onto themicrolens layer 79 through an adhesive layer 80.

A solder resist 612 and a connection terminal 613 for a connection withan external circuit are formed below the support substrate 71. Further,a through silicon via (TSV) and the like are formed, but illustrationthereof is omitted in FIG. 53.

In the wafer illustrated in FIG. 53, a groove 611 is formed between thechips 610. The groove 611-1 is formed between the chip 610-1 and thechip 610-2, and the groove 611-2 is formed between the chip 610-1 andthe chip 610-3.

There is a scribe section 91-1 between the chip 610-1 between the chip610-2, and the groove 611-1 is formed in the scribe section 91-1.Similarly, there is a scribe section 91-2 between the chip 610-1 betweenthe chip 610-3, and the groove 611-2 is formed in the scribe section91-2.

In the chip 610 illustrated in FIG. 53, the groove 611 is formed suchthat the cover glass 81, the adhesive layer 80, the microlens layer 79,the planarization film 78, the color filter layer 77, the planarizationfilm 75, the silicon substrate 73, the interconnection layer 72, and thesupport substrate 71 are excavated.

A glass 614 formed of the same glass as the cover glass 81 and anadhesive layer 615 formed of the same material as the adhesive layer 80are stacked on the groove 611.

The adhesive layer 615-1 extend from the adhesive layer 80 is formed onthe side surfaces of the microlens layer 79, the planarization film 78,the color filter layer 77, the planarization film 75, the siliconsubstrate 73, the interconnection layer 72, and the support substrate 71at the chip 610-2 side of the groove 611-1.

The adhesive layer 615-2 extend from the adhesive layer 80 is formed onthe side surfaces of the microlens layer 79, the planarization film 78,the color filter layer 77, the planarization film 75, the siliconsubstrate 73, the interconnection layer 72, and the support substrate 71at the chip 610-3 side of the groove 611-1. As described above, when theadhesive layer 80 is formed in the horizontal direction, the adhesivelayer 615 is formed in the vertical direction.

The glass 614-1 is formed between the adhesive layer 615-1 and theadhesive layer 615-2. The glass 614-1 is formed to extend from the coverglass 81. When the cover glass 81 is formed in the horizontal direction,the glass 614 is formed in the vertical direction.

Similarly, the adhesive layer 615-3 extend from the adhesive layer 80 isformed on the side surfaces of the microlens layer 79, the planarizationfilm 78, the color filter layer 77, the planarization film 75, thesilicon substrate 73, the interconnection layer 72, and the supportsubstrate 71 at the chip 610-1 side of the groove 611-2.

The adhesive layer 615-4 extend from the adhesive layer 80 is formed onthe side surfaces of the microlens layer 79, the planarization film 78,the color filter layer 77, the planarization film 75, the siliconsubstrate 73, the interconnection layer 72, and the support substrate 71at the chip 610-3 side of the groove 611-2. As described above, when theadhesive layer 80 is formed in the horizontal direction, the adhesivelayer 615 is formed in the vertical direction.

The glass 614-2 is formed between the adhesive layer 615-3 and theadhesive layer 615-4. The glass 614-2 is formed to extend from the coverglass 81. When the cover glass 81 is formed in the horizontal direction,the glass 614 is formed in the vertical direction.

When the wafer in which the groove 611 is formed between the chips 610is diced along the scribe section 91, the chip 610-1 illustrated in FIG.54 is cut out. In the chip 610-1 illustrated in FIG. 54, thecross-sectional surfaces of the microlens layer 79, the planarizationfilm 78, the color filter layer 77, the planarization film 75, thesilicon substrate 73, the interconnection layer 72, and the supportsubstrate 71 are covered with the film in which the glass 614 and theadhesive layer 615 are stacked and thus not exposed on the surface.

As described above, the diced chip 610-1 has a structure in which partsof the stacked layers of the chip 610-1 are covered with the glass614-1′ and the adhesive layer 615-2 formed in the groove 611-1′ (a dashis added to the groove after dicing in order to be distinguished fromthe groove 611-1 before dicing illustrated in FIG. 53).

Further, the diced chip 610-1 has a structure in which parts of thestacked layers of the chip 610-1 are covered with the glass 614-2′ andthe adhesive layer 615-3 formed in the groove 611-2′.

As described above, both ends of the chip 610-1 are covered with theglass 614 and the adhesive layer 615. Thus, it is possible to preventmoisture from intruding into the chip 610-1 from the side of the chip610-1.

Further, the solder resist 612-1 is formed below the chip 610-1, andthus it is possible to prevent moisture from intruding into the chip610-1 from the bottom. Instead of the solder resist 612-1, an oxide filmmay be used, and an oxide film may be further stacked on the solderresist 612-1.

Since the diced chip 610-1 is configured such that the groove 611-1′ andthe groove 611-2′ remain as described above, a width of the groove 611-1and the groove 611-2 between the chips 610 before dicing (a width of theglass 614) is preferably larger than a width of a blade used in thedicing process.

As the groove 611 is formed, and the glass 614 and the adhesive layer615 are formed in the groove 611 as described above, the moisture-proofperformance can be further improved.

Manufacturing of Chip According to (6-1)-St Embodiment

A process of manufacturing a chip (wafer) having such a groove will bedescribed. FIG. 55 is a diagram for describing a process ofmanufacturing a chip prior to dicing.

The manufacturing process described with reference to FIG. 55 will focuson manufacturing of a groove serving as one of characteristic componentsof the present technology, and a manufacturing method of a related artcan be applied to manufacturing of other parts such as forming oflayers, and thus a description thereof will be appropriately omitted.

In step S611, a semiconductor wafer in which the photodiode 74 and thelike are formed is prepared. The semiconductor wafer is configured suchthat the support substrate 71, the interconnection layer 72, the siliconsubstrate 73, the planarization film 75, the color filter layer 77, theplanarization film 78, and the microlens layer 79 are stacked, thephotodiode 74 is formed in the silicon substrate 73, and the lightshielding film 76 is formed in the planarization film 75.

In step S611, the groove 611-1 and the groove 611-2 are formed in thesemiconductor wafer. The groove 611 is formed in the scribe section 91as described above. For example, the groove 611 is formed by performingdry etching after patterning. Alternatively, the groove 611 may beformed by a technique such as dry etching or wet etching.

An excavation amount of the semiconductor wafer (the depth of the groove611) depends on a film thickness of silicon finally embedded in glassand is, for example, about 30 micrometers to 300 micrometers. Anexcavation width is larger than a width of the glass 614.

In step S612, an adhesive layer 80 is formed. When the adhesive layer 80is formed, the groove 611 is also filled with the same material as amaterial for forming the adhesive layer 80. The material filling thegroove 611 is the adhesive layer 615. The adhesive layer 80 is formedusing a technique such as a coating technique or a lamination technique.

While the above manufacturing process is being performed, in step S613,the cover glass 81 is prepared. In step S613, excavating is performed onthe prepared cover glass 81.

A width w of a protruding portion of the cover glass 81 illustrated instep S613 is smaller than a width w′ (see step S611) of the groove 611formed in the semiconductor wafer. Further, a height h of the protrudingportion of the cover glass 81 is almost the same as or larger or smallerthan a height h′ (see step S611) of the groove 611 formed in thesemiconductor wafer.

As a thickness of the cover glass 81 above the photodiode 74 (sensor) (alayer above an excavated layer) decreases, an effect of preventing aflare from a glass edge increases. In the bonding structure of therelated art, the glass substrate serves as a support, and thus when thecover glass 81 is thin, a chip is likely to be broken, and the coverglass 81 has to have a certain thickness or more.

However, in the structure of the chip 610, the glass is formed to coverthe outer side of the sensor chip, and thus the covered outer side isreinforced, and even when the glass thickness of the upper portion ofthe sensor is thin, the chip can be prevented from being broken.

Thus, it is possible to reduce the glass thickness of the sensor upperportion of the cover glass 81, for example, up to 100 micrometers to 500micrometers.

According to the sixth embodiment, the glass thickness of the sensorupper portion of the cover glass 81 can be reduced, and thus it ispossible to prevent a flare from the glass edge.

In step S614, the semiconductor wafer is bonded to the cover glass 81.The bonding is performed such that a portion (a convex portion of thesilicon substrate 73) in which the photodiode 74 of the semiconductorwafer and the like are formed approaches an excavated portion (a concaveportion) of the cover glass 81, and the protruding portion of the coverglass 81 other than the excavated portion serves as the glass 614.

When the bonding is performed, in order to prevent bubbles from cominginto the bonding surface, a vacuum bonding machine is preferably used.Further, since the bonding is performed in a wafer level, there is nobig influence, and a CSP process which will be described later is notinfluenced.

Here, the description proceeds with the example in which the adhesivelayer 80 is formed on the semiconductor wafer and bonded to the coverglass 81, but the adhesive layer 80 may be formed on the cover glass 81and bonded to the semiconductor wafer.

In step S615, the support substrate 71 is thinned. The thinning of thesupport substrate 71 is performed up to the bottom portion of the glass614 (a front end of the convex portion of the cover glass 81) such thatthe bottom surface of the support substrate 71 is on the same plane asthe bottom surface of the convex portion of the cover glass 81.

In step S616, a CSP process is performed. In order to open aninterconnection portion of a multi-layer interconnection (notillustrated) formed in the semiconductor wafer surface, a through holeis formed by etching, an insulating film such as a silicon oxide film isformed, the insulating film in the through hole is etched and opened, athrough electrode is formed in the through hole, for example, Cuplating, and an interconnection is formed on a surface (back surface) ofa side opposite to a translucent substrate of the semiconductor wafer.

In step S617, dicing is performed using the convex portion (the glass614) of the cover glass 81 as the scribe section 91, and thus the chipis diced.

As the groove 611 is formed, and the glass 614 and the adhesive layer615 are formed in the groove 611 as described above, the moisture-proofperformance can be further improved.

Further, as the groove 611 is formed, the glass 614 and the adhesivelayer 615 are stacked in the groove 611, and dicing is performed alongthe glass 614 and the adhesive layer 615, force applied to an interfacebetween films at the time of dicing can be mitigated, and a possibilitythat film peeling or a crack will occur can be reduced.

A possibility that film peeling or a crack will occur can be reduced,and thus the moisture-proof performance of the chip can be furtherimproved.

(6-2)-Nd Embodiment

FIG. 56 illustrates another configuration of a chip according to thesixth embodiment. FIG. 56 illustrates a wafer that includes a pluralityof chips (three chips in FIG. 56) and is not diced yet, similarly toFIG. 53.

Here, a chip positioned at the center is referred to as a “chip 620-1,”a chip positioned at the left is referred to as a “chip 620-2,” and achip positioned at the right is referred to as a “chip 620-3.” In thefollowing description, when the chips 620-1 to 620-3 need not bedistinguished from one another, the chips are referred to as simply a“chip 620.”

Each chip 620 has the same configuration as the chip 610 described abovewith reference to FIG. 53 except that a configuration of a groove or thelike is different, and a description will proceed with a differentportion.

In the wafer illustrated in FIG. 56, a groove 621 is formed between thechips 620. The groove 621-1 is formed between the chip 620-1 and thechip 620-2, and the groove 621-2 is formed between the chip 620-1 andthe chip 620-3.

There is a scribe section 91-1 between the chip 620-1 and the chip620-2, and the groove 621-1 is formed in the scribe section 91-1.Similarly, there is a scribe section 91-2 between the chip 620-1 and thechip 620-3, and the groove 621-2 is formed in the scribe section 91-2.

In the chip 620 illustrated in FIG. 56, the groove 621 is formed suchthat the cover glass 81, the adhesive layer 80, the microlens layer 79,the planarization film 78, the color filter layer 77, the planarizationfilm 75, the silicon substrate 73, the interconnection layer 72, and apart of the support substrate 71 are excavated.

A glass 624 formed of the same glass as the cover glass 81 and anadhesive layer 625 formed of the same material as the adhesive layer 80are stacked on the groove 621.

The adhesive layer 625-1 extend from the adhesive layer 80 is formed onthe side surfaces of the microlens layer 79, the planarization film 78,the color filter layer 77, the planarization film 75, the siliconsubstrate 73, the interconnection layer 72, and the part of the supportsubstrate 71 at the chip 620-2 side of the groove 621-1.

The adhesive layer 625-2 extend from the adhesive layer 80 is formed onthe side surfaces of the microlens layer 79, the planarization film 78,the color filter layer 77, the planarization film 75, the siliconsubstrate 73, the interconnection layer 72, and the part of the supportsubstrate 71 at the chip 620-1 side of the groove 621-1. As describedabove, when the adhesive layer 80 is formed in the horizontal direction,the adhesive layer 625 is formed in the vertical direction.

The glass 624-1 is formed between the adhesive layer 625-1 and theadhesive layer 625-2. The glass 624-1 is formed to extend from the coverglass 81. When the cover glass 81 is formed in the horizontal direction,the glass 624 is formed in the vertical direction.

Similarly, the adhesive layer 625-3 extend from the adhesive layer 80 isformed on the side surfaces of the microlens layer 79, the planarizationfilm 78, the color filter layer 77, the planarization film 75, thesilicon substrate 73, the interconnection layer 72, and the part of thesupport substrate 71 at the chip 620-1 side of the groove 621-2.

The adhesive layer 625-4 extend from the adhesive layer 80 is formed onthe side surfaces of the microlens layer 79, the planarization film 78,the color filter layer 77, the planarization film 75, the siliconsubstrate 73, the interconnection layer 72, and the part of the supportsubstrate 71 at the chip 620-3 side of the groove 621-2. As describedabove, when the adhesive layer 80 is formed in the horizontal direction,the adhesive layer 625 is formed in the vertical direction.

The glass 624-2 is formed between the adhesive layer 625-3 and theadhesive layer 625-4. The glass 624-2 is formed to extend from the coverglass 81. When the cover glass 81 is formed in the horizontal direction,the glass 624 is formed in the vertical direction.

When the wafer in which the groove 621 is formed between the chips 620is diced along the scribe section 91, the chip 620-1 illustrated in FIG.57 is cut out. In the chip 620-1 illustrated in FIG. 57, thecross-sectional surfaces of the microlens layer 79, the planarizationfilm 78, the color filter layer 77, the planarization film 75, thesilicon substrate 73, the interconnection layer 72, and the part of thesupport substrate 71 are covered with the film in which the glass 624and the adhesive layer 625 are stacked and thus not exposed on thesurface.

As described above, the diced chip 620-1 has a structure in which partsof the stacked layers of the chip 620-1 are covered with the glass624-1′ and the adhesive layer 625-2 formed in the groove 621-1′ (a dashis added to the groove after dicing in order to be distinguished fromthe groove 621-1 before dicing illustrated in FIG. 56).

Further, the diced chip 620-1 has a structure in which parts of thestacked layers of the chip 620-1 are covered with the glass 624-2′ andthe adhesive layer 625-3 formed in the groove 621-2′.

As described above, both ends of the chip 620-1 are covered with theglass 624 and the adhesive layer 625. Thus, it is possible to preventmoisture from intruding into the chip 620-1 from the side of the chip620-1.

Further, the front ends of the glass 624 and the adhesive layer 625 areformed in the support substrate 71. In order to make the supportsubstrate 71 expect the moisture-proof performance, the front end of theadhesive layer 625 is covered with the support substrate 71, and thus itis possible to prevent moisture from intruding from the front end of theadhesive layer 625.

Further, a solder resist 622-1 is formed below the chip 620-1, and thusit is possible to prevent moisture from intruding into the chip 620-1from the bottom. Instead of the solder resist 622-1, an oxide film maybe used, and an oxide film may be further stacked on the solder resist622-1.

Since the diced chip 620-1 is configured such that the groove 621-1′ andthe groove 621-2′ remain, and the part of the groove remains in thatportion as described above, a width of the groove 621-1 and the groove621-2 between the chips 620 before dicing (a width of the glass 624) ispreferably larger than a width of a blade used in the dicing process.

As the groove 621 is formed, and the glass 624 and the adhesive layer625 are formed in the groove 621 as described above, the moisture-proofperformance can be further improved. Further, as the front end of theadhesive layer 625 is covered with the support substrate 71, intrusionof moisture from the bottom of the chip 620 can be prevented, and themoisture-proof performance can be further improved.

Manufacturing of Chip According to (6-2)-Nd Embodiment

A process of manufacturing a chip (wafer) having such a groove will bedescribed. FIG. 58 is a diagram for describing a process ofmanufacturing a chip prior to dicing.

The manufacturing process described with reference to FIG. 58 will focuson manufacturing of a groove serving as one of characteristic componentsof the present technology, and a manufacturing method of a related artcan be applied to manufacturing of other parts such as forming oflayers, and thus a description thereof will be appropriately omitted.

The same processes as the processes of manufacturing the chip 610according to the (6-1)-st embodiment are included, and thus adescription of the same processes will be appropriately omitted.Specifically, a difference lies in that when the support substrate 71 isthinned, the thinning is performed in the state in which the supportsubstrate 71 remains.

In step S641, a groove 621-1 and a groove 621-2 are formed in thesemiconductor wafer. In step S642, an adhesive layer 80 is formed. Whenthe adhesive layer 80 is formed, the groove 621 is also filled with thesame material as a material for forming the adhesive layer 80.

In step S643, excavating is performed on the cover glass 81. In stepS644, the semiconductor wafer is bonded to the cover glass 81. Thebonding is performed such that the convex portion of the cover glass 81overlap the concave portion of the semiconductor wafer.

Here, the description proceeds with the example in which the adhesivelayer 80 is formed on the semiconductor wafer and bonded to the coverglass 81, but the adhesive layer 80 may be formed on the cover glass 81and bonded to the semiconductor wafer.

The process of steps S641 to S644 is performed in the same manner as theprocess of steps S611 to S614 related to the manufacturing of the chip610 illustrated in FIG. 55.

Thus, in the (6-2)-nd embodiment, similarly to the (6-1)-st embodiment,it is possible to reduce the thickness of the sensor upper portion ofthe cover glass 81, and it is possible to prevent a flare from the glassedge.

Further, when the bonding is performed in step S644, the bonding isperformed in a wafer level, and thus there is no big influence, and achip size package (CSP) process which will be latter process is notinfluenced.

In step S645, the support substrate 71 is thinned. The thinning of thesupport substrate 71 is performed before reaching the bottom portion ofthe glass 624 (the front end of the convex portion of the cover glass81) such that the state in which the bottom surface of the supportsubstrate 71 and the bottom surface of the convex portion of the coverglass 81, that is, the bottom surface of the adhesive layer 625 arecovered with the support substrate 71 is maintained.

In step S646, a CSP process is performed. In step S647, dicing isperformed using the convex portion (the glass 624) of the cover glass 81as the scribe section 91, and thus the chip is diced. The process ofsteps S646 and S647 is performed in the same manner as the process ofsteps S616 and S617 related to the manufacturing of the chip 610illustrated in FIG. 55.

As the groove 621 is formed, and the glass 624 and the adhesive layer625 are formed in the groove 621 as described above, the moisture-proofperformance can be further improved. Further, as the thinning isperformed so that the support substrate 71 remains in the front endportion of the adhesive layer 625, it is possible to prevent moisturefrom intruding from the bottom of the chip 620, and the moisture-proofperformance can be further improved.

Further, as the groove 621 is formed, the glass 624 and the adhesivelayer 625 are stacked in the groove 621, and dicing is performed alongthe glass 624 and the adhesive layer 625, force applied to an interfacebetween films at the time of dicing can be mitigated, and a possibilitythat film peeling or a crack will occur can be reduced.

A possibility that film peeling or a crack will occur can be reduced,and thus the moisture-proof performance of the chip can be furtherimproved.

(6-3)-Rd Embodiment

FIG. 59 illustrates another configuration of a chip according to thesixth embodiment. FIG. 59 illustrates a wafer that includes a pluralityof chips (three chips in FIG. 59) and is not diced yet, similarly toFIG. 53.

Here, a chip positioned at the center is referred to as a “chip 630-1,”a chip positioned at the left is referred to as a “chip 630-2,” and achip positioned at the right is referred to as a “chip 630-3.” In thefollowing description, when the chips 630-1 to 630-3 need not bedistinguished from one another, the chips are referred to as simply a“chip 630.”

Each chip 630 has the same configuration as the chip 610 described abovewith reference to FIG. 53 except that no adhesive layer 80 is formed onthe microlens layer 79. The chip 610 according to the (6-1)-stembodiment and the chip 620 according to the (6-2)-nd embodiment arecavity-less chip size packages (CSPs), but the chip 630 according to the(6-3)-rd embodiment is a cavity CSP.

Since the chip 630 is the cavity CSP, as illustrated in FIG. 59, a spacelayer 641 is formed between a microlens layer 79 and a cover glass 81 ofthe chip 630.

In the wafer illustrated in FIG. 59, a groove 631 is formed between thechips 630. The groove 631-1 is formed between the chip 630-1 and thechip 630-2, and the groove 631-2 is formed between the chip 630-1 andthe chip 630-3.

There is a scribe section 91-1 between the chip 630-1 and the chip630-2, and the groove 631-1 is formed in the scribe section 91-1.Similarly, there is a scribe section 91-2 between the chip 630-1 and thechip 630-3, and the groove 631-2 is formed in the scribe section 91-2.

In the chip 630 illustrated in FIG. 59, the groove 631 is formed suchthat the cover glass 81, the space layer 641, the microlens layer 79,the planarization film 78, the color filter layer 77, the planarizationfilm 75, the silicon substrate 73, the interconnection layer 72, and thesupport substrate 71 are excavated.

A glass 634 formed of the same glass as the cover glass 81 and anadhesive layer 635 formed of the same material as the adhesive layer 80are stacked on the groove 631.

For the adhesive layer 80, since the chip 630 has the cavity structure,there is no adhesive layer 80, and instead there is the space layer 641,but as will be described later, in the manufacturing process, theadhesive layer 80 is formed, a part of the adhesive layer 80 remains,and the remaining part of the adhesive layer 80 is formed as the spacelayer 641.

The adhesive layer 635-1 is formed on the side surfaces of the spacelayer 641, the microlens layer 79, the planarization film 78, the colorfilter layer 77, the planarization film 75, the silicon substrate 73,the interconnection layer 72, and the support substrate 71 at the chip630-2 side of the groove 631-1.

The adhesive layer 635-2 is formed on the side surfaces of the spacelayer 641, the microlens layer 79, the planarization film 78, the colorfilter layer 77, the planarization film 75, the silicon substrate 73,the interconnection layer 72, and the support substrate 71 at the chip630-1 side of the groove 631-1. As described above, when the adhesivelayer 80 is formed in the horizontal direction, the adhesive layer 635is formed in the vertical direction.

The glass 634-1 is formed between the adhesive layer 635-1 and theadhesive layer 635-2. The glass 634-1 is formed to extend from the coverglass 81. When the cover glass 81 is formed in the horizontal direction,the glass 634 is formed in the vertical direction.

Similarly, the adhesive layer 635-3 is formed on the side surfaces ofthe space layer 641, the microlens layer 79, the planarization film 78,the color filter layer 77, the planarization film 75, the siliconsubstrate 73, the interconnection layer 72, and the support substrate 71at the chip 630-1 side of the groove 631-2.

The adhesive layer 635-4 is formed on the side surfaces of the spacelayer 641, the microlens layer 79, the planarization film 78, the colorfilter layer 77, the planarization film 75, the silicon substrate 73,the interconnection layer 72, and the support substrate 71 at the chip630-3 side of the groove 631-2. As described above, when the adhesivelayer 80 is formed in the horizontal direction, the adhesive layer 635is formed in the vertical direction.

The glass 634-2 is formed between the adhesive layer 635-3 and theadhesive layer 635-4. The glass 634-2 is formed to extend from the coverglass 81. When the cover glass 81 is formed in the horizontal direction,the glass 634 is formed in the vertical direction.

When the wafer in which the groove 631 is formed between the chips 630is diced along the scribe section 91, the chip 630-1 illustrated in FIG.60 is cut out. In the chip 630-1 illustrated in FIG. 60, thecross-sectional surfaces of the space layer 641, the microlens layer 79,the planarization film 78, the color filter layer 77, the planarizationfilm 75, the silicon substrate 73, the interconnection layer 72, and thesupport substrate 71 are covered with the film in which the glass 634and the adhesive layer 635 are stacked and thus not exposed on thesurface.

As described above, the diced chip 630-1 has a structure in which partsof the stacked layers of the chip 630-1 are covered with the glass634-1′ and the adhesive layer 635-2 formed in the groove 631-1′ (a dashis added to the groove after dicing in order to be distinguished fromthe groove 631-1 before dicing illustrated in FIG. 59).

Further, the diced chip 630-1 has a structure in which parts of thestacked layers of the chip 630-1 are covered with the glass 634-2′ andthe adhesive layer 635-3 formed in the groove 631-2′.

As described above, both ends of the chip 630-1 are covered with theglass 634 and the adhesive layer 635. Thus, it is possible to preventmoisture from intruding into the chip 630-1 from the side of the chip630-1.

Further, a solder resist 632-1 is formed below the chip 630-1, and thusit is possible to prevent moisture from intruding into the chip 630-1from the bottom. Instead of the solder resist 632-1, an oxide film maybe used, and an oxide film may be further stacked on the solder resist632-1.

Since the diced chip 630-1 is configured such that the groove 631-1′ andthe groove 631-2′ remain, a width of the groove 631-1 and the groove631-2 between the chips 630 before dicing (a width of the glass 634) ispreferably larger than a width of a blade used in the dicing process.

As the groove 631 is formed, and the glass 634 and the adhesive layer635 are formed in the groove 631 as described above, the moisture-proofperformance can be further improved.

Manufacturing of Chip According to (6-2)-Nd Embodiment

A process of manufacturing a chip (wafer) having such a groove will bedescribed. FIG. 61 is a diagram for describing a process ofmanufacturing a chip prior to dicing. The manufacturing processdescribed with reference to FIG. 61 will focus on manufacturing of agroove serving as one of characteristic components of the presenttechnology, and a manufacturing method of a related art can be appliedto manufacturing of other parts such as forming of layers, and thus adescription thereof will be appropriately omitted.

The same processes as the processes of manufacturing the chip 610according to the (6-1)-st embodiment are included, and thus adescription of the same processes will be appropriately omitted.

In step S661, the groove 631-1 and the groove 631-2 are formed in thesemiconductor wafer. In step S662, the adhesive layer 80 is formed. Whenthe adhesive layer 80 is formed, the groove 631 is also filled with thesame material as a material for forming the adhesive layer 80.

The process of steps S661 and S662 is performed in the same manner asthe process of steps S611 and S612 related to the manufacturing of thechip 610 illustrated in FIG. 55.

In step S663, a part of the formed adhesive layer 80 is removed, so thata portion serving as the space layer 641 is formed. As described above,since a part of the adhesive layer 80 is removed after the adhesivelayer 80 is formed, a photosensitive adhesive is preferably used as amaterial of the adhesive layer 80. Then, patterning and etching areperformed, so that the adhesive layer 80 formed in the portion servingas the space layer 641 is removed.

In step S664, excavating is performed on the cover glass 81. In stepS665, the semiconductor wafer is bonded to the cover glass 81. Thebonding is performed such that the convex portion of the cover glass 81overlap the concave portion of the semiconductor wafer.

As a result, as the cover glass 81 is bonded to the semiconductor wafer,the space layer 641 is formed. In order to form the space layer 641, thedepth of the groove 631 formed in the semiconductor wafer and the depthof the convex portion of the cover glass 81 have to satisfy thefollowing relation.

In other words, the height h of the protruding portion of the coverglass 81 is larger than the height h′ (see step S661) of the groove 611formed in the semiconductor wafer. In other words, the height h of theconvex portion of the cover glass 81 and the height h′ of the groove 611satisfy a relation of (height h>height h′).

Since there is a difference between the height of the groove 611 and theheight of the convex portion of the cover glass 81 (the height of theportion corresponding to the glass 634) as described above, the spacelayer 641 can be formed.

Further, the width w of the convex portion of the cover glass 81 issmaller than the width w′ (see step S611) of the groove 611 formed inthe semiconductor wafer, similarly to the (6-1)-st embodiment.

Here, the description proceeds with the example in which the adhesivelayer 80 is formed on the semiconductor wafer and bonded to the coverglass 81, but the adhesive layer 80 may be formed on the cover glass 81,an unnecessary part of the adhesive layer 80 may be removed, and thenthe resultant adhesive layer 80 may be bonded to the semiconductorwafer.

The process of steps S661 to S665 (except step S663) is performed in thesame manner as the process of steps S611 to S614 related to themanufacturing of the chip 610 illustrated in FIG. 55. Thus, in the(6-3)-rd embodiment, similarly to the (6-1)-st embodiment, it ispossible to reduce the thickness of the sensor upper portion of thecover glass 81, and it is possible to prevent a flare from the glassedge.

Further, when the bonding is performed in step S665, the bonding isperformed in a wafer level, and thus there is no big influence, and aCSP process which will be latter process is not influenced.

In step S666, the support substrate 71 is thinned. The thinning of thesupport substrate 71 is performed up to the bottom portion of the glass634 (the front end of the convex portion of the cover glass 81) suchthat the bottom surface of the support substrate 71 is on the same planeas the bottom surface of the convex portion of the cover glass 81.

In step S667, a CSP process is performed. In step S668, dicing isperformed using the convex portion (the glass 634) of the cover glass 81as the scribe section 91, and thus the chip is diced. The process ofsteps S667 and S668 is performed in the same manner as the process ofsteps S616 and S617 related to the manufacturing of the chip 610illustrated in FIG. 55.

As the groove 631 is formed, and the glass 634 and the adhesive layer635 are formed in the groove 631 as described above, the moisture-proofperformance can be further improved.

Further, the groove 631 is formed, the glass 634 and the adhesive layer635 are stacked in the groove 631, and the portion corresponding to theglass 634 and the adhesive layer 635 is diced, and thus force applied toan interface between films at the time of dicing can be mitigated, and apossibility that film peeling or a crack will occur can be reduced.

A possibility that film peeling or a crack will occur can be reduced,and thus the moisture-proof performance of the chip can be furtherimproved.

Here, although not illustrated, the (6-2)-nd embodiment may be appliedto the (6-3)-rd embodiment. In other words, the glass 634 of the chip630 with the cavity structure and the front end of the adhesive layer635 may be covered with the support substrate 71.

In the case in which the chip 630 is configured as described above, whenthe thinning of the support substrate 71 is performed in step S666,similarly to the process of step S645 (FIG. 58), the thinning may beperformed before reaching the bottom surface of the glass 634 (the frontend of the convex portion of the cover glass 81) such that the state inwhich the bottom surface of the support substrate 71 and the bottomsurface of the convex portion of the cover glass 81, that is, the bottomsurface of the adhesive layer 635 are covered with the support substrate71 is maintained.

As the entire chip is covered with the cover glass 81 as describedabove, the chip has the structure in which there is no interface at theedge. As a result, it is possible to prevent intrusion of moisture fromthe edge interface of the chip.

Further, since the distance from the edge to the interface is large, itis possible to implement a structure into which moistures is unlikely tointrude.

Further, since the chip is covered with the cover glass 81 in a boxstructure, the end portion of the chip can have a sufficient glassthickness, and the thickness of the glass in the upper portion of thesensor can be reduced, and thus it is possible to prevent a flare fromthe glass edge.

Further, since the structure in which only glass is cut at the time ofdicing is provided, the cost can be reduced.

Seventh Embodiment

In the seventh embodiment, a certain layer in a chip is surrounded by ahydrophobic film to prevent intrusion of moisture into a chip.

(7-1)-St Embodiment

FIG. 62 illustrates a configuration of a chip according to the seventhembodiment. A chip 700 illustrated in FIG. 62 configures abackside-illumination type CMOS image sensor. Parts having the sameconfiguration as in the chip 70 illustrated in FIG. 2 are denoted by thesame reference numerals, and then a description will proceed.

Specifically, an interconnection layer 72 made of SiO2 is formed on asupport substrate 71, and silicon substrate 73 is formed on theinterconnection layer 72. A plurality of photodiodes 74 servingphotoelectric conversion units of pixels are formed on the surface ofthe silicon substrate 73 at certain intervals.

A passivation film 701 made of SiO2 is formed on the silicon substrate73 and the photodiode 74. A light shielding film 76 for preventing lightfrom leaking into a neighboring pixel is formed on a portion of thepassivation film 701 between the neighboring photodiodes 74. Aplanarization film 75 for planarizing a region on which a color filteris formed is formed on the passivation film 701 and the light shieldingfilm 76.

A color filter layer 77 is formed on the planarization film 75. In thecolor filter layer 77, a plurality of color filters are formed in unitsof pixels, and, for example, colors of the color filters are arrangedaccording to a Bayer array.

A microlens layer 79 is formed on the color filter layer 77. In themicrolens layer 79, a microlens layer for collecting light onto thephotodiode 74 of each pixel is formed for each pixel.

Here, the configuration of the chip 700 will be further described withreference to FIG. 63 in addition to FIG. 62. FIG. 63 is a plane viewschematically illustrating the configuration of the chip 700. In FIG.63, in order to help with understanding with the drawing, a referencenumeral of a pad opening portion 703 is partially omitted.

The chip 700 is roughly divided into a pixel region A1, a pad region A2,a scribe region A3, and a remaining region.

The pixel region A1 is a region in which a pixel including thephotodiode 74 formed on the surface of the silicon substrate 73 isarranged.

The pad regions A2 are defined outside the pixel region A1 to bearranged in parallel along two opposite sides of the chip 700. In eachof the pad regions A2, pad opening portions 703 each of which serves asa hole that extends from the upper end of the chip 700 to the inside ofthe interconnection layer 72 and is used as an interconnection hole foran electrode pad 702 are formed side by side in a straight line.Further, the electrode pad 702 for interconnection is formed at thebottom of the pad opening portion 703.

The scribe region A3 is a region in which the chip 700 is cut from thewafer, and includes an edge portion (hereinafter, referred to as a “chipedge”) of the chip 700.

In the pad region A2 and the scribe region A3, a hydrophobic film forpreventing intrusion of moisture from the outside or intrusion ofimpurities is formed. For example, the hydrophobic film may be formed byF-based deposition by etching using CxFy-based gas or CxHyFz-based gas(for example, CF₄, C₄F₈, C₅F₈, C₄F₆, CHF₃, CH₂ F₂, CH₃F, or C₅HF₇) ormay be formed by self-alignment in a sidewall portion.

In the pad region A2, the hydrophobic film is formed to cover the innerwall of the pad opening portion 703. In the chip 700 illustrated in FIG.62, a hydrophobic film 704-1 is formed on the pixel region A1 side ofthe pad opening portion 703, and the hydrophobic film 704-2 is formed onthe scribe region A3 side of the pad opening portion 703.

Since FIG. 62 is a cross-sectional view of the chip 700, the hydrophobicfilm 704 is illustrated to be formed on the inner wall of each padopening portion 703, but since the pad opening portion 703 has a closedshape such as a circular shape or a square shape as illustrated in FIG.63, the hydrophobic film 704-1 and the hydrophobic film 704-2 are formedas one uninterrupted hydrophobic film.

For convenience of description, in the drawings subsequent to FIG. 63,the hydrophobic film 704 formed on the pad opening portion 703 isillustrated as illustrated in FIG. 62, and the hydrophobic film 704 willbe described to be formed on the inner wall of each pad opening portion703.

The hydrophobic film 704 formed on the pad opening portion 703 is formedto cover the inner wall of the pad opening portion 703, and covers fromthe upper end of the microlens layer 79 to the part of the siliconsubstrate in which the interconnection layer 72 is formed. The front endof the hydrophobic film 704 comes into contact with the top surface ofthe electrode pad 702.

A hydrophobic film 705 is formed on the chip edge. Hereinafter, aportion formed vertically to the surface of the silicon substrate 73 onthe side surface of the chip 700 (the outer sidewall, that is, the outerwall of the chip 700) is referred to as a “sidewall portion.” Thehydrophobic film 705 formed in the sidewall portion covers the sidesurface of the chip 700 from the upper end of the microlens layer 79 tothe part of the silicon substrate in which the interconnection layer 72is formed. The front end of the hydrophobic film 705 comes into contactwith the silicon substrate in which the interconnection layer 72 isformed.

As described above, the inner wall of the groove formed in the verticaldirection to the substrate such as each pad opening portion 703 of thechip 700 is covered with the hydrophobic film 704 without a gap.Further, the sidewall portion formed in the vertical direction to thesubstrate of the chip 700 is covered with the hydrophobic film 705without a gap. As a result, intrusion of moisture or impurities into thechip 700 is prevented by the hydrophobic film 704 and the hydrophobicfilm 705. Thus, the chip 700 with the improved moisture-proofperformance can be implemented.

Since there is a stacked film interface on the inner wall and thesidewall portion of the pad opening portion 703, moisture is more likelyto intrude into the inner wall and the sidewall portion of the padopening portion 703 than the surface of the chip. As the hydrophobicfilm is formed on the inner wall and the sidewall portion of the padopening portion 703 to cover the stacked film interface, intrusion ofmoisture or impurities into the chip can be prevented.

Further, as the hydrophobic film is formed in the sidewall portion (thescribe region A3), force applied to an interface between films at thetime of dicing can be mitigated, and a possibility that film peeling ora crack will occur can be reduced. A possibility that film peeling or acrack will occur can be reduced, and thus the moisture-proof performanceof the chip can be further improved.

Manufacturing of Chip According to (7-1)-St Embodiment

A process of manufacturing a chip (wafer) having such a groove will bedescribed. FIG. 64 is a diagram for describing a process ofmanufacturing a chip prior to dicing. The manufacturing process thatwill be described with reference to FIG. 64 will focus on manufacturingof the hydrophobic film that is one of characteristic components of thepresent technology, and a manufacturing method of a related art can beapplied to manufacturing of other parts such as forming of layers, andthus a description thereof will be appropriately omitted.

In step S711, a semiconductor wafer in which the photodiode 74 and thelike are formed is prepared.

In step S712, the pad opening portion 703 of the pad region A2 of thesemiconductor wafer is formed. For example, the pad opening portion 703is formed by etching after patterning.

In step S713, the hydrophobic film 704 and the hydrophobic film 705 areformed. The hydrophobic film 704 and the hydrophobic film 705 may beformed by F-based deposition by etching using CxFy-based gas orCxHyFz-based gas (for example, CF₄, C₄F₈, C₅F₈, C₄F₆, CHF₃, CH₂F₂, CH₃F,or C₅HF₇) or may be formed by self-alignment in the sidewall portion.

As the hydrophobic film is formed on the inner wall of the pad openingportion 703 and the chip edge as described above, the moisture-proofperformance can be further improved.

Further, as dicing is performed after the hydrophobic film is formed inthe sidewall portion (the scribe region A3), force applied to aninterface between films at the time of dicing can be mitigated, and apossibility that film peeling or a crack will occur can be reduced. Apossibility that film peeling or a crack will occur can be reduced, andthus the moisture-proof performance of the chip can be further improved.

(7-2)-Nd Embodiment

FIG. 65 illustrates another configuration of a chip according to theseventh embodiment. A chip 710 illustrated in FIG. 65 configures abackside-illumination type CMOS image sensor. In the chip 710illustrated in FIG. 65, parts having the same configuration as in thechip 700 illustrated in FIG. 62 are denoted by the same referencenumerals, and then a description will proceed.

In the configuration of the chip 710 illustrated in FIG. 65 according tothe (7-2)-nd embodiment, the configuration in the pixel region A1 is thesame as in the configuration of the chip 700 illustrated in FIG. 62according to the (7-1)-st embodiment.

In the pad region A2 of the chip 710, grooves (slits) are formed at bothsides of a pad opening portion 703, and hydrophobic films are formed inthe grooves. A groove 711-1 is formed on the pixel region A1 side of thepad opening portion 703, and a hydrophobic film 712-1 and a hydrophobicfilm 712-2 are formed on the inner wall of the groove 711-1. Similarly,a groove 711-2 is formed at the scribe region A3 side of the pad openingportion 703, and a hydrophobic film 712-3 and a hydrophobic film 712-4are formed on the inner wall of the groove 711-2.

The groove 711 is formed such that up to a part of a silicon substrate73 in which the photodiode 74 is formed is excavated. The hydrophobicfilm 712 is formed on the inner side of the groove 711. In other words,the hydrophobic film 712 is formed to cover from the upper end of themicrolens layer 79 to the part of the silicon substrate 73, and thefront end of the hydrophobic film 704 is formed to come into contactwith the silicon substrate 73.

A groove (slit) is formed in the scribe region A3, and a hydrophobicfilm is formed in the groove. A groove 713 is formed in the scriberegion A3, and a hydrophobic film 714-1 and a hydrophobic film 714-2 areformed on the inner wall of the groove 713.

Similarly to the groove 711, the groove 713 is formed such that a partof the silicon substrate 73 in which the photodiode 74 is formed isexcavated. The hydrophobic film 714 is formed on the inner side of thegroove 713. In other words, the hydrophobic film 714 is formed to coverfrom the upper end of the microlens layer 79 to the part of the siliconsubstrate 73, and the front end of the hydrophobic film 704 is formed tocome into contact with the silicon substrate 73.

As the groove is formed, and the hydrophobic film is formed as describedabove, the pixel region A1 in which the photodiode 74 is arranged andthe region including the color filter layer 77 are surrounded by thesilicon substrate 73 and the hydrophobic films 712 and 714 having awaterproofing property without a gap.

As a result, intrusion of moisture or impurities into the photodiode 74and the color filter layer 77 is prevented, and an increase in a darkcurrent and a change in spectral characteristics of a color filter areprevented.

A hydrophobic film formed along the inner wall of the pad openingportion or the side surface of the chip to be exposed to the outsidesuch as the hydrophobic film 704 or the hydrophobic film 705 of the chip700 of FIG. 62 is referred to as a “sidewall type.” Meanwhile, ahydrophobic film embedded and formed in the inner side of the formedgroove such as the hydrophobic film 712 or the hydrophobic film 714 ofthe chip 710 of FIG. 65 is referred to as an “embedded type.”

The embedded type hydrophobic film can be formed to have a vertical stepdifference smaller than the sidewall type hydrophobic film.

As described above, according to the chip 710 of the (7-2)-ndembodiment, intrusion of moisture or impurities into the chip 710 isprevented by the hydrophobic film 712 and the hydrophobic film 714.Thus, the chip 710 with the improved moisture-proof performance can beimplemented.

Since there is a stacked film interface in the pad opening portion 703or the chip edge, moisture is more likely to intrude into the padopening portion 703 or the chip edge than the surface of the chip. Asthe groove and the hydrophobic film are formed in the pad openingportion 703 and the chip edge to cover the stacked film interface,intrusion of moisture or impurities into the chip can be prevented.

Further, as the hydrophobic film is formed in the sidewall portion (thescribe region A3), force applied to each film interface at the time ofdicing can be expected to be mitigated, and a possibility that filmpeeling or a crack will occur can be reduced.

Further, even when film peeling or a crack occurs, as the groove isformed, the occurrence of film peeling or a crack can be prevented bythe groove, and the pad region A2 can be prevented from beinginfluenced.

It is possible to reduce a possibility that film peeling or a crack willoccur and reduce influence even when film peeling or a crack occurs, andthus the moisture-proof performance of the chip can be further improved.

(7-3)-Rd Embodiment

FIG. 66 illustrates another configuration of a chip according to theseventh embodiment. A chip 720 illustrated in FIG. 66 configures abackside-illumination type CMOS image sensor. In the chip 720illustrated in FIG. 66, parts having the same configuration as in thechip 700 illustrated in FIG. 62 are denoted by the same referencenumerals, and then a description will proceed.

In the chip 720 illustrated in FIG. 66, a passivation film 721 forpreventing intrusion of moisture or impurities is formed on the surfaceof a microlens layer 79. For example, the passivation film 721 is formedof transparent SiN (silicon nitride) having a waterproofing property.

Here, the configuration of the passivation film 721 will be described indetail with reference to FIG. 63. The passivation film 721 can beroughly divided into a ceiling portion, a porous wall portion, and asidewall portion.

The ceiling portion is formed to cover the entire region surrounded bythe sidewall portion excluding the portion in which a pad openingportion 703 is formed. Further, a color filter layer 77 is arrangedbetween the ceiling portion and a silicon substrate 73. The passivationfilm 721 is formed in the ceiling portion.

The porous wall portion is formed to cover the inner wall of each padopening portion 703. The outer wall of the porous wall portion comesinto contact with the silicon substrate 73, and the lower end of theporous wall portion comes into contact with the top surface of theelectrode pad 702. A passivation film 722-1 and a passivation film 722-2(FIG. 66) are formed in the porous wall portion.

Since FIG. 66 is a cross-sectional view of the chip 720, the passivationfilm 722 is illustrated to be formed on the inner wall of each padopening portion 703, but since the pad opening portion 703 has a closedshape such as a circular shape or a square shape as illustrated in FIG.63, the passivation film 722-1 and the passivation film 722-2 are formedas one uninterrupted passivation film.

For convenience of description, in the drawings subsequent to FIG. 66,the passivation film 722 formed on the pad opening portion 703 isillustrated as illustrated in FIG. 66, and the passivation film 722 willbe described to be formed on the inner wall of each pad opening portion703.

The sidewall portion is formed vertically to the surface of the siliconsubstrate 73 in the side surface of the chip 720 (the outer sidewall,that is, the outer wall of the chip 720). The sidewall portion coversthe side surface of the chip 720 from the upper end of the microlenslayer 79 to a part of the interconnection layer 72, and the inner wallof the sidewall portion comes into contact with the side surface of thesilicon substrate 73. A passivation film 723 is formed in the sidewallportion.

Thus, the entire surface of the silicon substrate 73 including the pixelregion A1 and the entire color filter layer 77 excluding the portion inwhich the pad opening portion 703 is formed are surrounded by thepassivation film 721 of the ceiling portion and the passivation film 723of the sidewall portion without a gap. Further, each inner wall (theporous wall portion) of the pad opening portion 703 is covered with thepassivation film 722 without a gap.

As a result, intrusion of moisture or impurities from the surface (theupper portion) of the chip 720 is prevented by the passivation film 721in the ceiling portion. Further, intrusion of moisture or impuritiesfrom the side of the chip 720 is prevented by the passivation film 722in the porous wall portion and the passivation film 723 of the sidewallportion. Furthermore, intrusion of moisture or impurities from thebottom of the chip 720 is prevented by the bottom surface of the siliconsubstrate 73.

As a result, for example, even when the chip 720 is placed in anenvironment in which water vapor pressure is high, and moisture israpidly diffused, an increase in a dark current and a change in spectralcharacteristics caused by intrusion of moisture or impurities into thesurface of the photodiode 74 or the color filter layer 77 can beprevented.

Further, in the chip 720 illustrated in FIG. 66, the hydrophobic film isformed in the porous wall portion and the sidewall portion.

In the chip 720 illustrated in FIG. 66, a hydrophobic film 724-1 isformed in the pixel region A1 side of the pad opening portion 703, and ahydrophobic film 724-2 is formed in the scribe region A3 side of the padopening portion 703.

The hydrophobic film 724 formed in the pad opening portion 703 is formedto covers the inner wall of the pad opening portion 703 from the upperend of the microlens layer 79 to the part of the silicon substrate inwhich the interconnection layer 72 is formed. The front end of thehydrophobic film 724 comes into contact with the top surface of theelectrode pad 702.

A hydrophobic film 725 is formed at the chip edge. The hydrophobic film724 formed in the sidewall portion covers the side surface of the chip700 from the upper end of the microlens layer 79 to the part of thesilicon substrate in which the interconnection layer 72 is formed. Thefront end of the hydrophobic film 725 comes into contact with thesilicon substrate in which the interconnection layer 72 is formed.

As described above, the inner wall of each pad opening portion 703 ofthe chip 720 is covered with the hydrophobic film 724 without a gap.Further, the sidewall portion of the chip 720 is covered with thehydrophobic film 725 without a gap.

Since there is a stacked film interface in the porous wall portion andthe sidewall portion, moisture is more likely to intrude into the porouswall portion and the sidewall portion than the surface of the chip. Thehydrophobic film is formed in the porous wall portion and the sidewallportion to cover the stacked film interface, and thus intrusion ofmoisture or impurities into the chip can be prevented.

Further, as the hydrophobic film is formed in the sidewall portion (thescribe region A3), force applied to an interface between films at thetime of dicing can be mitigated, and a possibility that film peeling ora crack will occur can be reduced. A possibility that film peeling or acrack will occur can be reduced, and thus the moisture-proof performanceof the chip can be further improved.

As described above, the chip 720 illustrated in FIG. 66 has a structurein which intrusion of moisture or impurities is prevented by the film inwhich the two layers of the passivation film and the hydrophobic filmare stacked. Thus, the chip 720 with the improved moisture-proofperformance can be implemented.

Manufacturing of Chip According to (7-3)-Rd Embodiment

A process of manufacturing a chip (wafer) having such a groove will bedescribed. FIG. 64 is a diagram for describing a process ofmanufacturing a chip prior to dicing. The manufacturing process whichwill be described with reference to FIG. 67 will focus on manufacturingof the hydrophobic film that is one of characteristic components of thepresent technology, a manufacturing method of a related art can beapplied to manufacturing of other parts such as forming of layers, andthus a description thereof will be appropriately omitted.

In step S721, a semiconductor wafer in which the photodiode 74 and thelike are formed is prepared.

In step S722, the pad opening portion 703 of the pad region A2 of thesemiconductor wafer is formed. For example, the pad opening portion 703is formed by etching after patterning.

In step S723, the passivation film 721, the passivation film 722, andthe passivation film 723 are formed. After the passivation films areformed, a process of thinning the passivation films is performed asnecessary.

In step S724, the hydrophobic film 704 and the hydrophobic film 705 areformed. The hydrophobic film 704 and the hydrophobic film 705 may beformed by F-based deposition by etching using CxFy-based gas orCxHyFz-based gas (for example, CF₄, C₄F₈, C₅F₈, C₄F₆, CHF₃, CH₂F₂, CH₃F,or C₅HF₇) or may be formed by self-alignment in the sidewall portion.

As the passivation film and the hydrophobic film are formed on the innerwall of the pad opening portion 703 (the porous wall portion) and thechip edge (the sidewall portion), the moisture-proof performance can befurther improved.

As dicing is performed after the passivation film and the hydrophobicfilm are formed in the sidewall portion (the scribe region A3), forceapplied to an interface between films at the time of dicing can bemitigated, and a possibility that film peeling or a crack will occur canbe reduced. A possibility that film peeling or a crack will occur can bereduced, and thus the moisture-proof performance of the chip can befurther improved.

(7-4)-Th Embodiment

FIG. 68 illustrates another configuration of a chip according to theseventh embodiment. A chip 730 illustrated in FIG. 68 configures abackside-illumination type CMOS image sensor. In the chip 730illustrated in FIG. 68, parts having the same configuration as in thechip 720 illustrated in FIG. 66 are denoted by the same referencenumerals, and then a description will proceed.

In the configuration of the chip 730 illustrated in FIG. 68 according tothe (7-4)-th embodiment, the configuration in the pixel region A1 is thesame as in the configuration of the chip 720 illustrated in FIG. 66according to the (7-3)-rd embodiment, and a passivation film 721 isformed on a microlens layer 79.

In a pad region A2 of the chip 730, grooves (slits) are formed at bothsides of a pad opening portion 703, and a passivation film and ahydrophobic film are formed in the grooves. A groove 731-1 is formed onthe pixel region A1 side of the pad opening portion 703, and on theinner wall of the groove 731-1, a hydrophobic film 733-1 is formed to bestacked on a passivation film 732-1, and a hydrophobic film 733-2 isformed to be stacked on a passivation film 732-2.

Similarly, a groove 731-2 is formed on a scribe region A3 side of thepad opening portion 703, and on the inner wall of the groove 731-2, ahydrophobic film 733-3 is formed to be stacked on a passivation film732-3, and a hydrophobic film 733-4 is formed to be stacked on apassivation film 732-4.

The groove 731 is formed such that up to a part of the silicon substrate73 in which the photodiode 74 is formed is excavated. The passivationfilm 732 and the hydrophobic film 733 are formed on the inner side ofthe groove 731. In other words, the passivation film 732 and thehydrophobic film 733 are formed to cover from the upper end of themicrolens layer 79 to the part of the silicon substrate 73, and thepassivation film 732 and the front end of the hydrophobic film 704 areformed to come into contact with the silicon substrate 73.

A groove (slit) is formed in the scribe region A3, and a hydrophobicfilm is formed in the groove. A groove 734 is formed in the scriberegion A3, and on the inner wall of the groove 734, a hydrophobic film736-1 is formed to be stacked on a passivation film 735-1, and ahydrophobic film 736-2 is formed to be stacked on a passivation film735-2.

Similarly to the groove 731, the groove 734 is formed such that up to apart of the silicon substrate 73 in which the photodiode 74 is formed isexcavated. The passivation film 735 and the hydrophobic film 736 areformed on the inner side of the groove 734. In other words, thepassivation film 735 and the hydrophobic film 736 are formed to coverfrom the upper end of the microlens layer 79 to the part of the siliconsubstrate 73, and the front ends of the passivation film 735 and thehydrophobic film 736 are formed to come into contact with the siliconsubstrate 73.

As the groove is formed, and the passivation film and the hydrophobicfilm are formed as described above, the pixel region A1 in which thephotodiode 74 is arranged and the region including the color filterlayer 77 are surrounded by the silicon substrate 73, the passivationfilm, and the hydrophobic film having the waterproofing property withouta gap. As a result, intrusion of moisture or impurities into thephotodiode 74 and the color filter layer 77 is prevented, and anincrease in a dark current and a change in spectral characteristics of acolor filter are prevented.

As described above, according to the chip 730 according to the (7-4)-thembodiment, intrusion of moisture or impurities into the chip 730 isprevented by the passivation film and the hydrophobic film. Thus, thechip 730 with the improved moisture-proof performance can beimplemented.

Since there is a stacked film interface on the pad opening portion 703and the chip edge, moisture is more likely to intrude into the padopening portion 703 and the chip edge than the surface of the chip. Asthe groove and the hydrophobic film are formed in the pad openingportion 703 and the chip edge, and the stacked film interface is coveredwith the hydrophobic film, intrusion of moisture or impurities into thechip can be prevented.

Further, as the hydrophobic film is formed in the sidewall portion (thescribe region A3), force applied to each film interface at the time ofdicing can be expected to be mitigated, and a possibility that filmpeeling or a crack will occur can be reduced.

Further, even when film peeling or a crack occurs, as the groove isformed, the occurrence of film peeling or a crack can be prevented bythe groove, and the pad region A2 can be prevented from beinginfluenced.

It is possible to reduce a possibility that film peeling or a crack willoccur and reduce influence even when film peeling or a crack occurs, andthus the moisture-proof performance of the chip can be further improved.

(7-5)-Th Embodiment

FIG. 69 illustrates another configuration of a chip according to theseventh embodiment. A chip 740 illustrated in FIG. 69 configures abackside-illumination type CMOS image sensor. In a chip 740 illustratedin FIG. 69, parts having the same configuration as in the chip 720illustrated in FIG. 66 are denoted by the same reference numerals, andthen a description will proceed.

In the chip 740 illustrated in FIG. 69, a passivation film 721 forpreventing intrusion of moisture or impurities is formed on the surfaceof a microlens layer 79. This point is the same as in the chip 720illustrated in FIG. 66, but the chip 740 illustrated in FIG. 69 isdifferent from the chip 720 in that in a pad region A2 and a scriberegion A3, no microlens layer 79 is formed, and a passivation film 721is formed at a film thickness instead of the microlens layer 79.

In the pad region A2 and the scribe region A3, the photodiode 74 is notformed, and thus it is unnecessary to form a microlens. As no microlenslayer 79 is formed in the pad region A2 and the scribe region A3, it ispossible to reduce a possibility that moisture or the like will intrudeinto the microlens layer 79.

In the chip 740 illustrated in FIG. 69, similarly to the chip 720illustrated in FIG. 66, a hydrophobic film is formed in the porous wallportion and the sidewall portion.

In the chip 740 illustrated in FIG. 69, a hydrophobic film 742-1 isformed to be stacked on a passivation film 741-1 on the pixel region A1side of a pad opening portion 703, and a hydrophobic film 742-2 formedto be stacked on a passivation film 741-2 on the scribe region A3 sideof the pad opening portion 703.

The passivation film 741 formed in the pad opening portion 703 is formedto cover the inner wall of the pad opening portion 703, and covers fromthe upper end of a planarization film 75 to the part of the siliconsubstrate in which the interconnection layer 72 is formed. The front endof the passivation film 741 comes into contact with the top surface ofan electrode pad 702.

Similarly, the hydrophobic film 742 formed in the pad opening portion703 is formed to cover the inner wall of the pad opening portion 703,and covers from the upper end of the passivation film 721 to the part ofthe silicon substrate in which the interconnection layer 72 is formed.The front end of the hydrophobic film 742 comes into contact with thetop surface of the electrode pad 702.

The hydrophobic film 742 is formed to be stacked on the passivation film743 at the chip edge. The passivation film 743 formed in the sidewallportion covers from the upper end of the planarization film 75 to thepart of the silicon substrate in which the interconnection layer 72 isformed. The front end of the passivation film 743 comes into contactwith the silicon substrate in which an interconnection layer 72 isformed.

Similarly, a hydrophobic film 744 formed in the sidewall portion coversfrom the upper end of the passivation film 721 to the part of thesilicon substrate in which the interconnection layer 72 is formed. Thefront end of the hydrophobic film 744 comes into contact with thesilicon substrate in which the interconnection layer 72 is formed.

As described above, the inner wall of each pad opening portion 703 ofthe chip 740 is covered with the passivation film 741 and thehydrophobic film 742 without a gap. Further, the sidewall portion of thechip 740 is covered with the passivation film 743 and the hydrophobicfilm 742 without a gap.

Since there is a stacked film interface in the porous wall portion andthe sidewall portion, moisture is more likely to intrude into the porouswall portion and the sidewall portion than the surface of the chip. Thepassivation film and the hydrophobic film are formed in the porous wallportion and the sidewall portion to cover the stacked film interface,and thus intrusion of moisture or impurities into the chip can beprevented. Further, the passivation film of the corresponding portioncan be thickly formed, and thus the moisture proof effect can be furtherincreased.

Further, as the passivation film and the hydrophobic film are formed inthe sidewall portion (the scribe region A3) before dicing, force appliedto an interface between films at the time of dicing can be mitigated,and a possibility that film peeling or a crack will occur can bereduced. A possibility that film peeling or a crack will occur can bereduced, and thus the moisture-proof performance of the chip can befurther improved.

As described above, the chip 740 illustrated in FIG. 69 has a structurein which intrusion of moisture or impurities is prevented by the film inwhich the two layers of the passivation film and the hydrophobic filmare stacked. Thus, the chip 740 with the improved moisture-proofperformance can be implemented.

(7-6)-Th Embodiment

FIG. 70 illustrates another configuration of a chip according to theseventh embodiment. A chip 750 illustrated in FIG. 70 configures abackside-illumination type CMOS image sensor. In the chip 750illustrated in FIG. 70, parts having the same configuration as in thechip 730 illustrated in FIG. 68 are denoted by the same referencenumerals, and then a description will proceed.

In the chip 750 illustrated in FIG. 70, a passivation film 721 forpreventing intrusion of moisture or impurities is formed on the surfaceof a microlens layer 79. This point is the same as in the chip 730illustrated in FIG. 68, but the chip 750 illustrated in FIG. 70 isdifferent from the chip 730 in that in a pad region A2 and a scriberegion A3, no microlens layer 79 is formed, and a passivation film 721is formed at a film thickness instead of the microlens layer 79.

In the pad region A2 and the scribe region A3, the photodiode 74 is notformed, and thus it is unnecessary to form a microlens. As no microlenslayer 79 is formed in the pad region A2 and the scribe region A3, it ispossible to reduce a possibility that moisture or the like will intrudeinto the microlens layer 79.

In the chip 750 illustrated in FIG. 70, similarly to the chip 730illustrated in FIG. 68, a hydrophobic film is formed in the porous wallportion and the sidewall portion.

In the pad region A2 of the chip 750, grooves (slits) are formed at bothsides of the pad opening portion 703, and a passivation film and ahydrophobic film are formed in the grooves. A groove 751-1 is formed atthe pixel region A1 side of the pad opening portion 703, and on theinner wall of the groove 751-1, a hydrophobic film 753-1 is formed to bestacked on a passivation film 752-1, and a hydrophobic film 753-2 isformed to be stacked on a passivation film 752-2.

Similarly, a groove 751-2 is formed at the scribe region A3 side of thepad opening portion 703, and on the inner wall of the groove 751-2, ahydrophobic film 753-3 is formed to be stacked on a passivation film752-3, and a hydrophobic film 753-4 is formed to be stacked on apassivation film 752-4.

The groove 751 is formed such that up to a part of the silicon substrate73 in which the photodiode 74 is formed is excavated. The passivationfilm 752 and the hydrophobic film 753 are formed on the inner side ofthe groove 751. In other words, the passivation film 752 is formed tocover from the upper end of the planarization film 75 to the part of thesilicon substrate 73, and the front end of the passivation film 752 isformed to come into contact with the silicon substrate 73.

The hydrophobic film 753 is formed to cover from the upper end of thepassivation film 721 to the part of the silicon substrate 73, and thefront end of the hydrophobic film 753 is formed to come into contactwith the silicon substrate 73.

A groove (slit) is formed in the scribe region A3, and a hydrophobicfilm is formed in the groove. A groove 754 is formed in the scriberegion A3, and on the inner wall of the groove 754, a hydrophobic film756-1 is formed to be stacked on a passivation film 755-1, and ahydrophobic film 756-2 is formed to be stacked on a passivation film755-2.

Similarly to the groove 751, a groove 754 is formed such that up to apart of the silicon substrate 73 in which the photodiode 74 is formed isexcavated. The passivation film 755 and the hydrophobic film 756 areformed on the inner side of the groove 754. In other words, thepassivation film 755 is formed to cover from the upper end of theplanarization film 75 to the part of the silicon substrate 73, and thefront end of the passivation film 755 is formed to come into contactwith the silicon substrate 73.

The hydrophobic film 756 is formed to cover from the upper end of thepassivation film 721 to the part of the silicon substrate 73, and thefront end of the hydrophobic film 756 is formed to come into contactwith the silicon substrate 73.

As the groove is formed, and the passivation film and the hydrophobicfilm are formed as described above, the pixel region A1 in which thephotodiode 74 is arranged and the region including the color filterlayer 77 are surrounded by the silicon substrate 73, passivation film,and the hydrophobic film having the waterproofing property without agap. As a result, intrusion of moisture or impurities into thephotodiode 74 and the color filter layer 77 is prevented, and anincrease in a dark current and a change in spectral characteristics of acolor filter are prevented.

As described above, according to the chip 750 of the (7-4)-thembodiment, intrusion of moisture or impurities into the chip 750 areprevented by the passivation film and the hydrophobic film. Thus, thechip 750 with the improved moisture-proof performance can beimplemented.

Since there is a stacked film interface on the pad opening portion 703and the chip edge, moisture is more likely to intrude into the padopening portion 703 and the chip edge than the surface of the chip. Asthe groove and the hydrophobic film are formed in the pad openingportion 703 and the chip edge, and the stacked film interface is coveredwith the hydrophobic film, intrusion of moisture or impurities into thechip can be prevented.

Further, as the hydrophobic film is formed in the sidewall portion (thescribe region A3), force applied to each film interface at the time ofdicing can be expected to be mitigated, and a possibility that filmpeeling or a crack will occur can be reduced.

Further, even when film peeling or a crack occurs, as the groove isformed, the occurrence of film peeling or a crack can be prevented bythe groove, and the pad region A2 can be prevented from beinginfluenced.

It is possible to reduce a possibility that film peeling or a crack willoccur and reduce influence even when film peeling or a crack occurs, andthus the moisture-proof performance of the chip can be further improved.

(7-7)-Th Embodiment

FIG. 71 illustrates another configuration of a chip according to theseventh embodiment. A chip 760 illustrated in FIG. 71 configures abackside-illumination type CMOS image sensor. In the chip 760illustrated in FIG. 71, parts having the same configuration as in thechip 720 illustrated in FIG. 66 are denoted by the same referencenumerals, and then a description will proceed.

The chip 760 of FIG. 71 is different from the chip 720 of FIG. 66 inthat a microlens passivation film 761 and a planarization film 762 areformed instead of a passivation film 721 and a microlens layer 79.

The planarization film 762 is formed between a color filter layer 77 andthe microlens passivation film 761 in order to planarize a region inwhich a microlens is formed.

For example, the microlens passivation film 761 is formed of SiN that istransparent and has a waterproofing property, and performs the functionsof the microlens layer 79 and the passivation film 721 of FIG. 66 aswell. The microlens passivation film 761 includes a ceiling portion, aporous wall portion, and a sidewall portion.

In the ceiling portion, in a pixel region A1, a microlens for collectinglight onto the photodiode 74 of each pixel is formed for each pixel. Theceiling portion is formed to cover the entire region surrounded by thesidewall portion excluding the portion in which the pad opening portion703 is formed.

A microlens passivation film 763-1 and a microlens passivation film763-2 formed in the porous wall portion are formed to cover the innerwall of a pad opening portion 703. Further, the outer walls of themicrolens passivation film 763-1 and the microlens passivation film763-2 formed in the porous wall portion come into contact with thesilicon substrate 73, and the lower ends of the microlens passivationfilm 763-1 and the microlens passivation film 763-2 formed in the porouswall portion come into contact with the top surface of an electrode pad702.

A microlens passivation film 765 formed in the sidewall portion isformed to cover a range of the side surface of the chip 760 from theupper end of the planarization film 762 to a part of an interconnectionlayer 72. Further, the microlens passivation film 765 formed in thesidewall portion is vertical to the surface of a silicon substrate 73,and comes into contact with the side surface of the silicon substrate73.

As a result, the pixel region A1 in which the photodiode 74 is arrangedand the region including the color filter layer 77 are surrounded by thesilicon substrate 73, the microlens passivation film 761, the microlenspassivation film 763, and the microlens passivation film 765 having thewaterproofing property without a gap. As a result, intrusion of moistureor impurities into the surface of the photodiode 74 and the color filterlayer 77 is prevented, and an increase in a dark current and a change inspectral characteristics of a color filter are prevented.

Further, the microlens passivation film 761 functions as both amicrolens and a passivation film having a waterproofing property, andthus it is possible to reduce the number of stacked layers of the chip760 and the number of manufacturing processes.

In the chip 760 illustrated in FIG. 71, the hydrophobic film is formedin the porous wall portion and the sidewall portion.

In the chip 760 illustrated in FIG. 71, a hydrophobic film 764-1 isformed at the pixel region A1 side of the pad opening portion 703, and ahydrophobic film 764-2 is formed at the, the scribe region A3 side ofthe pad opening portion 703.

The hydrophobic film 764 formed in the pad opening portion 703 is formedto cover the inner wall of the pad opening portion 703, and covers fromthe upper end of the microlens passivation film 761 to the part of thesilicon substrate in which the interconnection layer 72 is formed. Thefront end of the hydrophobic film 764 comes into contact with the topsurface of the electrode pad 702.

A hydrophobic film 766 is formed in the sidewall portion. Thehydrophobic film 766 formed in the sidewall portion covers the sidesurface of the chip 760 from the upper end of the microlens passivationfilm 761 to the part of the silicon substrate in which theinterconnection layer 72 is formed. Further, the front end of thehydrophobic film 766 comes into contact with the silicon substrate inwhich the interconnection layer 72 is formed.

As described above, the inner wall of each pad opening portion 703 ofthe chip 760 is covered with the hydrophobic film 764 without a gap.Further, the sidewall portion of the chip 760 is covered with thehydrophobic film 766 without a gap.

Since there is a stacked film interface in the porous wall portion andthe sidewall portion, moisture is more likely to intrude into the porouswall portion and the sidewall portion than the surface of the chip. Asthe hydrophobic film is formed in the porous wall portion and thesidewall portion to cover the stacked film interface, intrusion ofmoisture or impurities into the chip can be prevented.

Further, as the microlens passivation film and the hydrophobic film areformed in the sidewall portion (the scribe region A3), force applied toan interface between films at the time of dicing can be mitigated, and apossibility that film peeling or a crack will occur can be reduced. Apossibility that film peeling or a crack will occur can be reduced, andthus the moisture-proof performance of the chip can be further improved.

As described above, the chip 760 illustrated in FIG. 71 has a structurein which intrusion of moisture or impurities is prevented by the film inwhich the two layers of the microlens passivation film and thehydrophobic film are stacked. Thus, the chip 760 with the improvedmoisture-proof performance can be implemented.

(7-8)-Th Embodiment

FIG. 72 illustrates another configuration of a chip according to theseventh embodiment. A chip 770 illustrated in FIG. 72 configures abackside-illumination type CMOS image sensor. In the chip 770illustrated in FIG. 72, parts having the same configuration as in thechip 730 illustrated in FIG. 68 are denoted by the same referencenumerals, and then a description will proceed.

The chip 770 of FIG. 72 is different from the chip 730 of FIG. 68 inthat a microlens passivation film 761 and a planarization film 762 areformed instead of the passivation film 721 and the microlens layer 79.

The planarization film 762 is formed between a color filter layer 77 anda microlens passivation film 761 in order to planarize a region in whicha microlens is formed.

For example, the microlens passivation film 761 is formed of SiN that istransparent and has a waterproofing property, and performs the functionsof the microlens layer 79 and the passivation film 721 of FIG. 68 aswell. The microlens passivation film 761 includes a ceiling portion, aporous wall portion, and a sidewall portion.

In the ceiling portion, in a pixel region A1, a microlens for collectinglight onto a photodiode 74 of each pixel is formed for each pixel.Further, the ceiling portion is formed to cover the entire regionsurrounded by the sidewall portion excluding the portion in which a padopening portion 703 is formed.

In the pad region A2 of the chip 770, grooves (slits) are formed at bothsides of the pad opening portion 703, and the microlens passivation filmand the hydrophobic film are formed in the grooves. A groove 771-1 isformed at the pixel region A1 side of the pad opening portion 703, andon the inner wall of the groove 771-1, a hydrophobic film 773-1 isformed to be stacked on a microlens passivation film 772-1, and ahydrophobic film 773-2 is formed to be stacked on a microlenspassivation film 772-2.

Similarly, a groove 771-2 is formed at the scribe region A3 side of thepad opening portion 703, and on the inner wall of the groove 771-2, ahydrophobic film 773-3 is formed to be stacked on a microlenspassivation film 772-3, and a hydrophobic film 773-4 is formed to bestacked on a microlens passivation film 772-4.

The groove 771 is formed such that up to a part of the silicon substrate73 in which the photodiode 74 is formed is excavated. The microlenspassivation film 772 and the hydrophobic film 773 are formed on theinner side of the groove 771. In other words, the microlens passivationfilm 772 is formed to cover from the upper end of the planarization film762 to the part of the silicon substrate 73, and the front end of themicrolens passivation film 772 is formed to come into contact with thesilicon substrate 73.

The hydrophobic film 773 is formed to cover from the upper end of themicrolens passivation film 761 to the part of the silicon substrate 73,and the front end of the hydrophobic film 773 is formed to come intocontact with the silicon substrate 73.

A groove (slit) is formed in the scribe region A3, and a hydrophobicfilm is formed in the groove. A groove 774 is formed in the scriberegion A3, and on the inner wall of the groove 774, a hydrophobic film776-1 is formed to be stacked on a microlens passivation film 775-1, anda hydrophobic film 776-2 is formed to be stacked on a microlenspassivation film 775-2.

Similarly to the groove 771, the groove 774 is formed such that up to apart of the silicon substrate 73 in which the photodiode 74 is formed isexcavated. The microlens passivation film 775 and the hydrophobic film776 are formed on the inner side of the groove 774.

In other words, the microlens passivation film 775 is formed to coverfrom the upper end of the planarization film 762 to the part of thesilicon substrate 73, and the front end of the microlens passivationfilm 775 is formed to come into contact with the silicon substrate 73.

The hydrophobic film 776 is formed to cover from the upper end of themicrolens passivation film 761 to the part of the silicon substrate 73,and the front end of the hydrophobic film 776 is formed to come intocontact with the silicon substrate 73.

As the groove is formed, and the microlens passivation film and thehydrophobic film are formed as described above, the pixel region A1 inwhich the photodiode 74 is arranged and the region including the colorfilter layer 77 are surrounded by the silicon substrate 73, themicrolens passivation film, and the hydrophobic film having thewaterproofing property without a gap. As a result, intrusion of moistureor impurities into the photodiode 74 and the color filter layer 77 isprevented, and an increase in a dark current and a change in spectralcharacteristics of a color filter are prevented.

As described above, according to the chip 770 of the (7-8)-thembodiment, intrusion of moisture or impurities into the chip 770 isprevented by the microlens passivation film and the hydrophobic film.Thus, the chip 770 with the improved moisture-proof performance can beimplemented.

Since there is a stacked film interface on the pad opening portion 703and the chip edge, moisture is more likely to intrude into the padopening portion 703 and the chip edge than the surface of the chip. Asthe groove and the hydrophobic film are formed in the pad openingportion 703 and the chip edge, and the stacked film interface is coveredwith the hydrophobic film, intrusion of moisture or impurities into thechip can be prevented.

Further, as the hydrophobic film is formed in the sidewall portion (thescribe region A3), force applied to each film interface at the time ofdicing can be expected to be mitigated, and a possibility that filmpeeling or a crack will occur can be reduced.

Further, even when film peeling or a crack occurs, as the groove isformed, the occurrence of film peeling or a crack can be prevented bythe groove, and the pad region A2 can be prevented from beinginfluenced.

It is possible to reduce a possibility that film peeling or a crack willoccur and reduce influence even when film peeling or a crack occurs, andthus the moisture-proof performance of the chip can be further improved.

(7-9)-Th Embodiment

FIG. 73 illustrates another configuration of a chip according to theseventh embodiment. A chip 780 illustrated in FIG. 73 configures abackside-illumination type CMOS image sensor. In the chip 780illustrated in FIG. 73, parts having the same configuration as in thechip 760 illustrated in FIG. 71 are denoted by the same referencenumerals, and then a description will proceed.

The chip 780 of FIG. 73 has a configuration in which the planarizationfilm 762 is removed from the chip 760 of FIG. 71. In other words, theceiling portion of a microlens passivation film 761 of the chip 780illustrated in FIG. 73 comes into contact with the top surface of acolor filter layer 77.

As a result, the chip 780 is slightly lower in flatness of a microlensthan the chip 760 of FIG. 71, but it is possible to realize a reductionin a manufacturing process and a cost reduction while implementing thesame waterproofing effect.

In the chip 780 of FIG. 73, similarly to the chip 760 of FIG. 71, forexample, a microlens passivation film 761 is formed of SiN that istransparent and has a waterproofing property, and includes the ceilingportion, the porous wall portion, and the sidewall portion.

The microlens passivation film 761 formed in the ceiling portion isformed for each pixel as the microlens for collecting light onto aphotodiode 74 of each pixel in the pixel region A1. Further, the ceilingportion is formed to cover the entire region surrounded by the sidewallportion excluding the portion in which a pad opening portion 703 isformed.

A microlens passivation film 781-1 and a microlens passivation film781-2 formed in the porous wall portion are formed to cover the innerwall of the pad opening portion 703. Further, the outer walls of themicrolens passivation film 781-1 and the microlens passivation film781-2 formed in the porous wall portion come into contact with thesilicon substrate 73, and the lower ends of the microlens passivationfilm 781-1 and the microlens passivation film 781-2 formed in the porouswall portion come into contact with the top surface of an electrode pad702.

A microlens passivation film 783 formed in the sidewall portion isformed to cover a range of the side surface of the chip 780 from theupper end of the planarization film 75 to a part of an interconnectionlayer 72. Further, the microlens passivation film 783 formed in thesidewall portion is vertical to the surface of the interconnection layer72, and comes into contact with the side surface of the interconnectionlayer 72.

As a result, the pixel region A1 in which the photodiode 74 is arrangedand the region including the color filter layer 77 are surrounded by thesilicon substrate 73, the microlens passivation film 761, the microlenspassivation film 781, and the microlens passivation film 783 having thewaterproofing property without a gap. As a result, intrusion of moistureor impurities into the surface of the photodiode 74 and the color filterlayer 77 is prevented, and an increase in a dark current and a change inspectral characteristics of a color filter are prevented.

Further, the microlens passivation film 761 functions as both amicrolens and a passivation film having a waterproofing property, andthus it is possible to reduce the number of stacked layers of the chip780 and the number of manufacturing processes.

In the chip 780 illustrated in FIG. 73, the hydrophobic film is formedin the porous wall portion and the sidewall portion.

In the chip 780 illustrated in FIG. 73, a hydrophobic film 782-1 isformed at the pixel region A1 side of the pad opening portion 703, and ahydrophobic film 782-2 is formed at the scribe region A3 side of the padopening portion 703.

The hydrophobic film 782 formed on the pad opening portion 703 is formedto cover the inner wall of the pad opening portion 703, and covers fromthe upper end of the microlens passivation film 761 to the part of thesilicon substrate in which the interconnection layer 72 is formed. Thefront end of the hydrophobic film 782 comes into contact with the topsurface of the electrode pad 702.

A hydrophobic film 784 is formed in the sidewall portion. Thehydrophobic film 784 formed in the sidewall portion covers the sidesurface of the chip 780 from the upper end of the microlens passivationfilm 761 to the part of the silicon substrate in which theinterconnection layer 72 is formed. Further, the front end of thehydrophobic film 784 comes into contact with the silicon substrate inwhich the interconnection layer 72 is formed.

As described above, the inner wall of each pad opening portion 703 ofthe chip 780 is covered with the hydrophobic film 782 without a gap.Further, the sidewall portion of the chip 780 is covered with thehydrophobic film 784 without a gap.

Since there is a stacked film interface in the porous wall portion andthe sidewall portion, moisture is more likely to intrude into the porouswall portion and the sidewall portion than the surface of the chip. Asthe hydrophobic film is formed in the porous wall portion and thesidewall portion to cover the stacked film interface, intrusion ofmoisture or impurities into the chip can be prevented.

Further, as the microlens passivation film and the hydrophobic film areformed in the sidewall portion (the scribe region A3), force applied toan interface between films at the time of dicing can be mitigated, and apossibility that film peeling or a crack will occur can be reduced. Apossibility that film peeling or a crack will occur can be reduced, andthus the moisture-proof performance of the chip can be further improved.

As described above, the chip 780 illustrated in FIG. 73 has a structurein which intrusion of moisture or impurities is prevented by the film inwhich the two layers of the microlens passivation film and thehydrophobic film are stacked. Thus, the chip 780 with the improvedmoisture-proof performance can be implemented.

(7-10)-Th Embodiment

FIG. 74 illustrates another configuration of a chip according to theseventh embodiment. A chip 790 illustrated in FIG. 74 configures abackside-illumination type CMOS image sensor. In the chip 790illustrated in FIG. 74, parts having the same configuration as in thechip 770 illustrated in FIG. 72 are denoted by the same referencenumerals, and then a description will proceed.

The chip 790 of FIG. 74 has a configuration in which the planarizationfilm 762 is removed from the chip 770 of FIG. 72. In other words, theceiling portion of a microlens passivation film 761 of the chip 790illustrated in FIG. 74 comes into contact with the top surface of acolor filter layer 77.

As a result, the chip 790 is slightly lower in flatness of a microlensthan the chip 770 of FIG. 72, but it is possible to realize a reductionin a manufacturing process and a cost reduction while implementing thesame waterproofing effect.

In the chip 790 of FIG. 74, similarly to the chip 770 of FIG. 72, forexample, the microlens passivation film 761 is formed of SiN that istransparent and has a waterproofing property, and includes the ceilingportion, the porous wall portion, and the sidewall portion.

The microlens passivation film 761 formed in the ceiling portion isformed for each pixel as the microlens for collecting light onto aphotodiode 74 of each pixel in a pixel region A1. Further, the ceilingportion is formed to cover the entire region surrounded by the sidewallportion excluding the portion in which a pad opening portion 703 isformed.

In a pad region A2 of the chip 790, grooves (slits) are formed at bothsides of the pad opening portion 703, and the microlens passivation filmand the hydrophobic film are formed in the grooves. A groove 791-1 isformed on the pixel region A1 side of the pad opening portion 703, andon the inner wall of the groove 791-1, a hydrophobic film 793-1 isformed to be stacked on a microlens passivation film 792-1, and ahydrophobic film 793-2 is formed to be stacked on a microlenspassivation film 792-2.

Similarly, a groove 791-2 is formed on a scribe region A3 side of thepad opening portion 703, and on the inner wall of the groove 791-2, ahydrophobic film 793-3 is formed to be stacked on a microlenspassivation film 792-3, and a hydrophobic film 793-4 is formed to bestacked on a microlens passivation film 792-4.

The groove 791 is formed such that up to a part of the silicon substrate73 in which the photodiode 74 is formed is excavated. The microlenspassivation film 792 and the hydrophobic film 793 are formed on theinner side of the groove 791. In other words, the microlens passivationfilm 792 is formed to cover from the upper end of a planarization film75 to the part of the silicon substrate 73, and the front end of themicrolens passivation film 792 is formed to come into contact with thesilicon substrate 73.

The hydrophobic film 793 is formed to cover from the upper end of themicrolens passivation film 761 to the part of the silicon substrate 73,and the front end of the hydrophobic film 793 is formed to come intocontact with the silicon substrate 73.

A groove (slit) is formed in the scribe region A3, and a hydrophobicfilm is formed in the groove. A groove 794 is formed in the scriberegion A3, and on the inner wall of the groove 794, a hydrophobic film796-1 is formed to be stacked on a microlens passivation film 795-1, anda hydrophobic film 796-2 is formed to be stacked on a microlenspassivation film 795-2.

Similarly to the groove 791, the groove 794 is formed such that up to apart of the silicon substrate 73 in which the photodiode 74 is formed isexcavated. The microlens passivation film 795 and the hydrophobic film796 are formed on the inner side of the groove 794.

In other words, the microlens passivation film 795 is formed to coverthe upper end of the planarization film 75 to the part of the siliconsubstrate 73, and the front end of the microlens passivation film 795 isformed to come into contact with the silicon substrate 73.

The hydrophobic film 796 is formed to cover from the upper end of themicrolens passivation film 761 to the part of the silicon substrate 73,and the front end of the hydrophobic film 796 is formed to come intocontact with the silicon substrate 73.

As the groove is formed, and the microlens passivation film and thehydrophobic film are formed as described above, the pixel region A1 inwhich the photodiode 74 is arranged and the region including the colorfilter layer 77 are surrounded by the silicon substrate 73, themicrolens passivation film, and the hydrophobic film having thewaterproofing property without a gap. As a result, intrusion of moistureor impurities into the photodiode 74 and the color filter layer 77 isprevented, and an increase in a dark current and a change in spectralcharacteristics of a color filter are prevented.

As described above, according to the chip 790 of the (7-10)-thembodiment, intrusion of moisture or impurities into the chip 790 can beprevented by is prevented by the microlens passivation film and thehydrophobic film. Thus, the chip 790 with the improved moisture-proofperformance can be implemented.

Since there is a stacked film interface on the pad opening portion 703and the chip edge, moisture is more likely to intrude into the padopening portion 703 and the chip edge than the surface of the chip. Asthe groove and the hydrophobic film are formed in the pad openingportion 703 and the chip edge, and the stacked film interface is coveredwith the hydrophobic film, intrusion of moisture or impurities into thechip can be prevented.

Further, as the hydrophobic film is formed in the sidewall portion (thescribe region A3), force applied to each film interface at the time ofdicing can be expected to be mitigated, and a possibility that filmpeeling or a crack will occur can be reduced.

Further, even when film peeling or a crack occurs, as the groove isformed, the occurrence of film peeling or a crack can be prevented bythe groove, and the pad region A2 can be prevented from beinginfluenced.

It is possible to reduce a possibility that film peeling or a crack willoccur and reduce influence even when film peeling or a crack occurs, andthus the moisture-proof performance of the chip can be further improved.

(7-11)-Th Embodiment

FIG. 75 illustrates another configuration of a chip according to theseventh embodiment. A chip 800 illustrated in FIG. 75 configures abackside-illumination type CMOS image sensor. In the chip 800illustrated in FIG. 75, parts having the same configuration as in thechip 720 illustrated in FIG. 66 are denoted by the same referencenumerals, and then a description will proceed.

In the chip 800 illustrated in FIG. 75, a passivation film 801 forpreventing intrusion of moisture or impurities is formed between amicrolens layer 79 and a color filter layer 77. For example, thepassivation film 801 is formed of transparent SiN (silicon nitride)having a waterproofing property.

A ceiling portion of the passivation film 801 is formed between thecolor filter layer 77 and the microlens layer 79, and comes into contactwith the top surface of a color filter layer 77 and the bottom surfaceof the microlens layer 79. Here, in the pad region A2 and the scriberegion A3 in which the color filter layer 77 is not formed, the ceilingportion is formed between a planarization film 75 and the microlenslayer 79 and comes into contact with the top surface of theplanarization film 75 and the bottom surface of the microlens layer 79.

The passivation film 801 formed in the ceiling portion is formed tocover the entire region surrounded by the sidewall portion excluding aportion in which a pad opening portion 802 is formed. Further, the colorfilter layer 77 is arranged between the passivation film 801 formed inthe ceiling portion and the silicon substrate 73.

The passivation film 801 formed in the porous wall portion is formed tocover the inner wall of each pad opening portion 802, and a passivationfilm 803-1 and a passivation film 803-2 (FIG. 75) are formed. Thepassivation film 803 formed in the porous wall portion comes intocontact with a silicon substrate 73, and the lower end of the porouswall portion comes into contact with the top surface of an electrode pad702.

As the passivation film 801 formed in the sidewall portion, apassivation film 805 is formed on the side surface of the chip 800 (theouter sidewall, that is, the outer wall of the chip 800) vertically tothe surface of the silicon substrate 73. The passivation film 805 formedin the sidewall portion covers a range of the side surface of the chip800 from the upper end of the planarization film 75 to a part of theinterconnection layer 72, and the inner wall of the sidewall portioncomes into contact with the side surface of the silicon substrate 73.

Thus, excluding the portion in which the pad opening portion 802 isformed, the entire surface of the silicon substrate 73 including thepixel region A1 and the entire color filter layer 77 are surrounded bythe passivation film 801 in the ceiling portion and the passivation film805 in the sidewall portion without a gap. Further, the inner wall (theporous wall portion) of each pad opening portion 802 is covered with thepassivation film 803 without a gap.

As a result, intrusion of moisture or impurities from the surface (theupper portion) of the chip 800 is prevented by the passivation film 801in the ceiling portion and the passivation film 803 in the sidewallportion. Further, intrusion of moisture or impurities from the side ofthe chip 800 is prevented by the passivation film 805 in the sidewallportion. Furthermore, intrusion of moisture or impurities from thebottom of the chip 800 is prevented by the bottom surface of the siliconsubstrate 73.

As a result, for example, even when the chip 800 is placed in anenvironment in which water vapor pressure is high, and moisture israpidly diffused, an increase in a dark current and a change in spectralcharacteristics caused by intrusion of moisture or impurities into thesurface of a photodiode 74 or the color filter layer 77 can beprevented.

Further, in the chip 800 illustrated in FIG. 75, the hydrophobic film isformed in the porous wall portion and the sidewall portion.

In the chip 800 illustrated in FIG. 75, a hydrophobic film 804-1 isformed at the pixel region A1 side of the pad opening portion 802, and ahydrophobic film 804-2 is formed at the scribe region A3 side of the padopening portion 802.

The hydrophobic film 804 formed in the pad opening portion 802 is formedto cover the inner wall of the pad opening portion 802, and covers fromthe upper end of the passivation film 801 to the part of the siliconsubstrate in which the interconnection layer 72 is formed. The front endof the hydrophobic film 804 comes into contact with the top surface ofthe electrode pad 702.

A hydrophobic film 806 is formed at the chip edge. The hydrophobic film806 formed in the sidewall portion covers the side surface of the chip800 from the upper end of the passivation film 801 to the part of thesilicon substrate in which the interconnection layer 72 is formed.Further, the front end of the hydrophobic film 806 comes into contactwith the silicon substrate in which the interconnection layer 72 isformed.

As described above, the inner wall of each pad opening portion 802 ofthe chip 800 is covered with the hydrophobic film 804 without a gap.Further, the sidewall portion of the chip 800 is covered with thehydrophobic film 806 without a gap.

Since there is a stacked film interface in the porous wall portion andthe sidewall portion, moisture is more likely to intrude into the porouswall portion and the sidewall portion than the surface of the chip. Asthe hydrophobic film is formed in the porous wall portion and thesidewall portion to cover the stacked film interface, intrusion ofmoisture or impurities into the chip can be prevented.

Further, as the hydrophobic film is formed in the sidewall portion (thescribe region A3), force applied to an interface between films at thetime of dicing can be mitigated, and a possibility that film peeling ora crack will occur can be reduced. A possibility that film peeling or acrack will occur can be reduced, and thus the moisture-proof performanceof the chip can be further improved.

As described above, the chip 800 illustrated in FIG. 75 has a structurein which intrusion of moisture or impurities is prevented by the film inwhich the two layers of the passivation film and the hydrophobic filmare stacked. Thus, the chip 800 with the improved moisture-proofperformance can be implemented.

(7-12)-Th Embodiment

FIG. 76 illustrates another configuration of a chip according to theseventh embodiment. A chip 810 illustrated in FIG. 76 configures abackside-illumination type CMOS image sensor. In the chip 810illustrated in FIG. 76, parts having the same configuration as in thechip 710 illustrated in FIG. 65 are denoted by the same referencenumerals, and then a description will proceed.

In the chip 810 illustrated in FIG. 76, a passivation film 801 forpreventing intrusion of moisture or impurities is formed between amicrolens layer 79 and a color filter layer 77. For example, thepassivation film 801 is formed of transparent SiN (silicon nitride)having a waterproofing property.

A ceiling portion of the passivation film 801 is formed between thecolor filter layer 77 and the microlens layer 79, and comes into contactwith the top surface of the color filter layer 77 and the bottom surfaceof the microlens layer 79. Here, in a pad region A2 and a scribe regionA3 in which the color filter layer 77 is not formed, the ceiling portionis formed between a planarization film 75 and the microlens layer 79 andcomes into contact with the top surface of the planarization film 75 andthe bottom surface of the microlens layer 79.

In the pad region A2 of the chip 810, grooves (slits) are formed at bothends of the pad opening portion 802, and a passivation film and ahydrophobic film are formed in the grooves.

A groove 811-1 is formed on the pixel region A1 side of the pad openingportion 802, and on the inner wall of the groove 811-1, a hydrophobicfilm 813-1 is formed to be stacked on a passivation film 812-1, and ahydrophobic film 813-2 is formed to be stacked on a passivation film812-2. The groove 811-1 is filled with the same material as the materialfor forming the microlens layer 79, and formed to be consecutive to themicrolens layer 79.

Similarly, a groove 811-2 is formed on the scribe region A3 side of thepad opening portion 802, and on the inner wall of the groove 811-2, ahydrophobic film 813-3 is formed to be stacked on a passivation film812-3, and a hydrophobic film 813-4 is formed to be stacked on apassivation film 812-4. The groove 811-2 is filled with the samematerial as the material for forming the microlens layer 79.

The groove 811 is formed such that up to a part of the silicon substrate73 in which the photodiode 74 is formed is excavated. The passivationfilm 812 and the hydrophobic film 813 are formed on the inner side ofthe groove 811. In other words, the passivation film 812 is formed tocover from the upper end of the planarization film 75 to the part of thesilicon substrate 73, and the front end of the passivation film 812 isformed to come into contact with the silicon substrate 73.

The hydrophobic film 813 is formed to cover from the upper end of thepassivation film 801 to the part of the silicon substrate 73, and thefront end of the hydrophobic film 813 is formed to come into contactwith the silicon substrate 73. In other words, the hydrophobic film 813is formed to cover the side surface of the passivation film 801.

A groove (slit) is formed in a scribe region A3, and a passivation filmand a hydrophobic film are formed in the groove. A groove 815 is formedin the scribe region A3, and on the inner wall of the groove 815, ahydrophobic film 817-1 is formed to be stacked on a passivation film816-1, and a hydrophobic film 817-2 is formed to be stacked on apassivation film 816-2.

The groove 815 is filled with the same material as the material forforming the microlens layer 79.

Similarly to the groove 811, the groove 815 is formed such that up to apart of the silicon substrate 73 in which the photodiode 74 is formed isexcavated. The passivation film 816 and the hydrophobic film 817 areformed on the inner side of the groove 815. In other words, thepassivation film 816 is formed to cover from the upper end of theplanarization film 75 to the part of the silicon substrate 73, and thefront end of the passivation film 816 is formed to come into contactwith the silicon substrate 73.

The hydrophobic film 817 is formed to cover from the upper end of thepassivation film 801 to the part of the silicon substrate 73, and thefront end of the hydrophobic film 817 is formed to come into contactwith the silicon substrate 73. In other words, the hydrophobic film 817is formed to cover the side surface of the passivation film 801.

As the groove is formed, and the passivation film and the hydrophobicfilm are formed as described above, the pixel region A1 in which thephotodiode 74 is arranged and the region including the color filterlayer 77 is surrounded by the silicon substrate 73, passivation film,and the hydrophobic film having the waterproofing property without agap. As a result, intrusion of moisture or impurities into thephotodiode 74 and the color filter layer 77 is prevented, and anincrease in a dark current and a change in spectral characteristics of acolor filter are prevented.

As described above, according to the chip 810 of the (7-12)-thembodiment, intrusion of moisture or impurities into the chip 810 isprevented by the passivation film and the hydrophobic film. Thus, thechip 810 with the improved moisture-proof performance can beimplemented.

Since there is a stacked film interface on the pad opening portion 703and the chip edge, moisture is more likely to intrude into the padopening portion 703 and the chip edge than the surface of the chip. Asthe groove and the hydrophobic film are formed in the pad openingportion 703 and the chip edge, and the stacked film interface is coveredwith the hydrophobic film, intrusion of moisture or impurities into thechip can be prevented.

Further, as the hydrophobic film is formed in the sidewall portion (thescribe region A3), force applied to each film interface at the time ofdicing can be expected to be mitigated, and a possibility that filmpeeling or a crack will occur can be reduced.

Further, even when film peeling or a crack occurs, as the groove isformed, the occurrence of film peeling or a crack can be prevented bythe groove, and the pad region A2 can be prevented from beinginfluenced.

It is possible to reduce a possibility that film peeling or a crack willoccur and reduce influence even when film peeling or a crack occurs, andthus the moisture-proof performance of the chip can be further improved.

Further, since the portion in which the groove is formed is filled withthe same material as the material for forming the microlens layer 79,the configuration in which intrusion of moisture or the like is notallowed can be provided, and the moisture-proof performance can befurther improved.

(7-13)-Th Embodiment

FIG. 77 illustrates another configuration of a chip according to theseventh embodiment. A chip 820 illustrated in FIG. 77 configures abackside-illumination type CMOS image sensor. In the chip 820illustrated in FIG. 77, parts having the same configuration as in thechip 800 illustrated in FIG. 75 are denoted by the same referencenumerals, and then a description will proceed.

In the chip 820 illustrated in FIG. 77, a passivation film 821 forpreventing intrusion of moisture or impurities is formed between aplanarization film 75 and a color filter layer 77. For example, thepassivation film 821 is formed of transparent SiN (silicon nitride)having a waterproofing property.

A ceiling portion of the passivation film 821 is formed between theplanarization film 75 and the color filter layer 77, and comes intocontact with the top surface of the planarization film 75 and the bottomsurface of the color filter layer 77. Here, in a pad region A2 and ascribe region A3 in which the color filter layer 77 is not formed, theceiling portion is formed between the planarization film 75 and amicrolens layer 79 and comes into contact with the top surface of theplanarization film 75 and the bottom surface of the microlens layer 79.

The passivation film 821 formed in the ceiling portion is formed tocover the entire region surrounded by the sidewall portion excluding aportion in which a pad opening portion 802 is formed.

The passivation film 821 formed in the porous wall portion is formed tocover the inner wall of each pad opening portion 802, and a passivationfilm 822-1 and a passivation film 822-2 are formed. The passivation film822 formed in the porous wall portion comes into contact with a siliconsubstrate 73, and the lower end of the porous wall portion comes intocontact with the top surface of an electrode pad 702.

A passivation film 824 formed in the sidewall portion is formed on theside surface of the chip 820 (the outer sidewall, that is, the outerwall of the chip 820) vertical to the surface of the silicon substrate73, and formed as the passivation film 824. The passivation film 824formed in the sidewall portion covers a range of the side surface of thechip 820 from the upper end of the planarization film 75 to a part of aninterconnection layer 72, and the inner wall of the sidewall portioncomes into contact with the side surface of the silicon substrate 73.

Thus, excluding the portion in which the pad opening portion 802 isformed, the entire surface of the silicon substrate 73 including a pixelregion A1 is surrounded by the passivation film 821 in the ceilingportion and the passivation film 824 in the sidewall portion without agap. Further, the inner wall (the porous wall portion) of each padopening portion 802 is covered with the passivation film 822 without agap.

As a result, intrusion of moisture or impurities from the surface (theupper portion) of the chip 820 is prevented by the passivation film 821in the ceiling portion and the passivation film 822 in the sidewallportion. Further, intrusion of moisture or impurities from the side ofthe chip 820 is prevented by the passivation film 824 in the sidewallportion. Furthermore, intrusion of moisture or impurities from thebottom of the chip 820 is prevented by the bottom surface of the siliconsubstrate 73.

As a result, for example, even when the chip 820 is placed in anenvironment in which water vapor pressure is high, and moisture israpidly diffused, an increase in a dark current and a change in spectralcharacteristics caused by intrusion of moisture or impurities into thesurface of the photodiode 74 or the color filter layer 77 can beprevented.

Further, in the chip 820 illustrated in FIG. 77, the hydrophobic film isformed in the porous wall portion and the sidewall portion.

In the chip 820 illustrated in FIG. 77, a hydrophobic film 823-1 isformed at the pixel region A1 side of the pad opening portion 802, and ahydrophobic film 823-2 is formed at the scribe region A3 side of the padopening portion 802.

The hydrophobic film 823 formed in the pad opening portion 802 is formedto cover the inner wall of the pad opening portion 802, and covers fromthe upper end of the passivation film 821 to the part of the siliconsubstrate in which the interconnection layer 72 is formed. The front endof the hydrophobic film 823 comes into contact with the top surface ofthe electrode pad 702.

A hydrophobic film 825 is formed at the chip edge. The hydrophobic film825 formed in the sidewall portion covers the side surface of the chip820 from the upper end of the passivation film 821 to the part of thesilicon substrate in which the interconnection layer 72 is formed.Further, the front end of the hydrophobic film 825 comes into contactwith the silicon substrate in which the interconnection layer 72 isformed.

As described above, the inner wall of each pad opening portion 802 ofthe chip 820 is covered with the hydrophobic film 823 without a gap.Further, the sidewall portion of the chip 820 is covered with thehydrophobic film 825 without a gap.

Since there is a stacked film interface in the porous wall portion andthe sidewall portion, moisture is more likely to intrude into the porouswall portion and the sidewall portion than the surface of the chip. Asthe hydrophobic film is formed in the porous wall portion and thesidewall portion to cover the stacked film interface, intrusion ofmoisture or impurities into the chip can be prevented.

Further, as the hydrophobic film is formed in the sidewall portion (thescribe region A3), force applied to an interface between films at thetime of dicing can be mitigated, and a possibility that film peeling ora crack will occur can be reduced. A possibility that film peeling or acrack will occur can be reduced, and thus the moisture-proof performanceof the chip can be further improved.

As described above, the chip 820 illustrated in FIG. 77 has a structurein which intrusion of moisture or impurities is prevented by the film inwhich the two layers of the passivation film and the hydrophobic filmare stacked. Thus, the chip 820 with the improved moisture-proofperformance can be implemented.

(7-14)-Th Embodiment

FIG. 78 illustrates another configuration of a chip according to theseventh embodiment. A chip 830 illustrated in FIG. 78 configures abackside-illumination type CMOS image sensor. In the chip 830illustrated in FIG. 78, parts having the same configuration as in thechip 810 illustrated in FIG. 76 are denoted by the same referencenumerals, and then a description will proceed.

In the chip 830 illustrated in FIG. 78, a passivation film 821 forpreventing intrusion of moisture or impurities is formed between aplanarization film 75 and a color filter layer 77. For example, thepassivation film 821 is formed of transparent SiN (silicon nitride)having a waterproofing property.

The ceiling portion of the passivation film 821 is formed between theplanarization film 75 and the color filter layer 77, and comes intocontact with the top surface of the planarization film 75 and the bottomsurface of the color filter layer 77. Here, in a pad region A2 and ascribe region A3 in which the color filter layer 77 is not formed, theceiling portion is formed between the planarization film 75 and amicrolens layer 79 and comes into contact with the top surface of theplanarization film 75 and the bottom surface of the microlens layer 79.

In the pad region A2 of the chip 830, grooves (slits) are formed at bothends of a pad opening portion 802, and a passivation film and ahydrophobic film are formed in the grooves.

A groove 831-1 is formed on the pixel region A1 side of the pad openingportion 802, and on the inner wall of the groove 831-1, a hydrophobicfilm 833-1 is formed to be stacked on a passivation film 832-1, and ahydrophobic film 833-2 is formed to be stacked on a passivation film832-2. The groove 831-1 is filled with the same material as the materialfor forming the microlens layer 79 and formed to be consecutive to themicrolens layer 79.

Similarly, a groove 831-2 is formed on the scribe region A3 side of thepad opening portion 802, and on the inner wall of the groove 831-2, ahydrophobic film 833-3 is formed to be stacked on a passivation film832-3, and a hydrophobic film 833-4 is formed to be stacked on apassivation film 832-4. The groove 831-2 is filled with the samematerial as the material for forming the microlens layer 79.

The groove 831 is formed such that up to a part of a silicon substrate73 in which a photodiode 74 is formed is excavated. The passivation film832 and the hydrophobic film 833 are formed on the inner side of thegroove 831. In other words, the passivation film 832 is formed to coverfrom the upper end of the planarization film 75 to the part of thesilicon substrate 73, and the front end of the passivation film 832 isformed to come into contact with the silicon substrate 73.

The hydrophobic film 833 is formed to cover from the upper end of thepassivation film 821 to the part of the silicon substrate 73, and thefront end of the hydrophobic film 833 is formed to come into contactwith the silicon substrate 73. In other words, the hydrophobic film 833is formed to cover the side surface of the passivation film 832.

A groove (slit) is formed in the scribe region A3, and a hydrophobicfilm is formed in the groove. A groove 835 is formed in the scriberegion A3, and on the inner wall of the groove 835, a hydrophobic film837-1 is formed to be stacked on a passivation film 836-1, and ahydrophobic film 837-2 is formed to be stacked on a passivation film836-2.

The groove 835 is filled with the same material as the material forforming the microlens layer 79.

Similarly to the groove 831, the groove 835 is formed such that up to apart of the silicon substrate 73 in which the photodiode 74 is formed isexcavated. The passivation film 836 and the hydrophobic film 837 areformed on the inner side of the groove 835. In other words, thepassivation film 836 is formed to cover from the upper end of theplanarization film 75 to the part of the silicon substrate 73, and thefront end of the passivation film 836 is formed to come into contactwith the silicon substrate 73.

The hydrophobic film 837 is formed to cover from the upper end of thepassivation film 821 to the part of the silicon substrate 73, and thefront end of the hydrophobic film 837 is formed to come into contactwith the silicon substrate 73. In other words, the hydrophobic film 837is formed to cover the side surface of the passivation film 836.

As the groove is formed, and the passivation film and the hydrophobicfilm are formed as described above, the region including a pixel regionA1 in which the photodiode 74 is arranged is surrounded by the siliconsubstrate 73, passivation film, and the hydrophobic film having thewaterproofing property without a gap. As a result, intrusion of moistureor impurities into the photodiode 74 is prevented, and an increased in adark current is prevented.

As described above, according to the chip 830 of the (7-14)-thembodiment, intrusion of moisture or impurities into the chip 830 isprevented by the passivation film and the hydrophobic film. Thus, thechip 830 with the improved moisture-proof performance can beimplemented.

Since there is a stacked film interface on the pad opening portion 703and the chip edge, moisture is more likely to intrude into the padopening portion 703 and the chip edge than the surface of the chip. Asthe groove and the hydrophobic film are formed in the pad openingportion 703 and the chip edge, and the stacked film interface is coveredwith the hydrophobic film, intrusion of moisture or impurities into thechip can be prevented.

Further, as the hydrophobic film is formed in the sidewall portion (thescribe region A3), force applied to each film interface at the time ofdicing can be expected to be mitigated, and a possibility that filmpeeling or a crack will occur can be reduced.

Further, even when film peeling or a crack occurs, as the groove isformed, the occurrence of film peeling or a crack can be prevented bythe groove, and the pad region A2 can be prevented from beinginfluenced.

It is possible to reduce a possibility that film peeling or a crack willoccur and reduce influence even when film peeling or a crack occurs, andthus the moisture-proof performance of the chip can be further improved.

Further, since the portion in which the groove is formed is filled withthe same material as the material for forming the microlens layer 79,the configuration in which intrusion of moisture or the like is notallowed can be provided, and the moisture-proof performance can befurther improved.

(7-15)-Th Embodiment

FIG. 79 illustrates another configuration of a chip according to theseventh embodiment. A chip 840 illustrated in FIG. 79 configures abackside-illumination type CMOS image sensor. In the chip 840illustrated in FIG. 79, parts having the same configuration as in thechip 800 illustrated in FIG. 75 are denoted by the same referencenumerals, and then a description will proceed.

In the chip 840 illustrated in FIG. 79, a passivation film 841 forpreventing intrusion of moisture or impurities is formed between apassivation film 701 and a planarization film 75. Further, a lightshielding film 76 is formed on the top surface of the passivation film701, and in the portion in which the light shielding film 76 is formed,the passivation film 841 is formed between the light shielding film 76and the planarization film 75.

The passivation film 841 is consecutively formed. For example, thepassivation film 841 is formed of transparent SiN (silicon nitride)having a waterproofing property.

A ceiling portion of the passivation film 841 is consecutively formedbetween the passivation film 701 and the planarization film 75 andbetween the light shielding film 76 and the planarization film 75, andcomes into contact with the top surfaces of the passivation film 701 andthe light shielding film 76 and the bottom surface of the planarizationfilm 75. Here, in a pad region A2 in which the light shielding film 76is not formed and a scribe region A3, the ceiling portion is formedbetween the passivation film 701 and the planarization film 75, and thetop surface of the passivation film 701 and the bottom surface of theplanarization film 75 comes into contact with.

The passivation film 841 formed in the ceiling portion is formed tocover the entire region surrounded by the sidewall portion excluding aportion in which a pad opening portion 842 is formed.

The passivation film 841 formed in the porous wall portion is formed tocover the inner wall of each pad opening portion 842, and formed as apassivation film 843-1 and a passivation film 843-2.

The passivation film 841 formed in the sidewall portion is formed on theside surface of the chip 840 vertically to the surface of a siliconsubstrate 73, and formed as a passivation film 845. The sidewall portioncovers the side surface of the chip 840 from the upper end of thepassivation film 701 to a part of an interconnection layer 72, and theinner wall of the sidewall portion comes into contact with the sidesurface of the silicon substrate 73.

Thus, excluding the portion in which the pad opening portion 842 isformed, the entire surface of the silicon substrate 73 including a pixelregion A1 is surrounded by the passivation film 841 in the ceilingportion and the passivation film 845 in the sidewall portion without agap.

As a result, intrusion of moisture or impurities from the surface (theupper portion) of the chip 840 is prevented by the passivation film 841in the ceiling portion. Further, intrusion of moisture or impuritiesfrom the side of the chip 840 is prevented by the passivation film 845in the sidewall portion. Furthermore, intrusion of moisture orimpurities from the bottom of the chip 840 is prevented by the bottomsurface of the silicon substrate 73.

As a result, for example, even the chip 840 is placed in an environmentin which water vapor pressure is high, and moisture is rapidly diffused,it is possible to prevent an increase in a dark current and a change inspectral characteristics caused by intrusion of moisture or impuritiesinto the surface of a photodiode 74.

Further, in the chip 840 illustrated in FIG. 79, the hydrophobic film isformed in the porous wall portion and the sidewall portion.

In the chip 840 illustrated in FIG. 79, a hydrophobic film 844-1 isformed at the pixel region A1 side of the pad opening portion 842, andthe hydrophobic film 844-2 is formed at the scribe region A3 side of thepad opening portion 842.

The hydrophobic film 844 formed in the pad opening portion 842 is formedto cover the inner wall of the pad opening portion 842, and covers fromthe upper end of the passivation film 841 to the part of the siliconsubstrate in which the interconnection layer 72 is formed. The front endof the hydrophobic film 844 comes into contact with the top surface ofan electrode pad 870. In other words, the hydrophobic film 844 is formedto cover the passivation film 843.

A hydrophobic film 846 is formed at the chip edge. The hydrophobic film846 formed in the sidewall portion covers the side surface of the chip840 from the upper end of the passivation film 841 to the part of thesilicon substrate in which the interconnection layer 72 is formed.Further, the front end of the hydrophobic film 846 comes into contactwith the silicon substrate in which the interconnection layer 72 isformed. In other words, the hydrophobic film 846 is formed to cover thepassivation film 845.

As described above, the inner wall of each pad opening portion 842 ofthe chip 840 is covered with the hydrophobic film 844 without a gap.Further, the sidewall portion of the chip 840 is covered with thehydrophobic film 846 without a gap.

Since there is a stacked film interface in the porous wall portion andthe sidewall portion, moisture is more likely to intrude into the porouswall portion and the sidewall portion than the surface of the chip. Asthe hydrophobic film is formed in the porous wall portion and thesidewall portion to cover the stacked film interface, intrusion ofmoisture or impurities into the chip can be prevented.

Further, as the hydrophobic film is formed in the sidewall portion (thescribe region A3), force applied to an interface between films at thetime of dicing can be mitigated, and a possibility that film peeling ora crack will occur can be reduced. A possibility that film peeling or acrack will occur can be reduced, and thus the moisture-proof performanceof the chip can be further improved.

As described above, the chip 840 illustrated in FIG. 79 has a structurein which intrusion of moisture or impurities is prevented by the film inwhich the two layers of the passivation film and the hydrophobic filmare stacked. Thus, the chip 840 with the improved moisture-proofperformance can be implemented.

(7-16)-Th Embodiment

FIG. 80 illustrates another configuration of a chip according to theseventh embodiment. A chip 850 illustrated in FIG. 80 configures abackside-illumination type CMOS image sensor. In the chip 850illustrated in FIG. 80, parts having the same configuration as in thechip 810 illustrated in FIG. 76 are denoted by the same referencenumerals, and then a description will proceed.

In the chip 850 illustrated in FIG. 80, a passivation film 841 forpreventing intrusion of moisture or impurities is formed between apassivation film 701 and a planarization film 75. A light shielding film76 is formed on the top surface of the passivation film 701, and in theportion in which the light shielding film 76 is formed, a passivationfilm 841 is formed between the light shielding film 76 and theplanarization film 75.

The passivation film 841 is consecutively formed. For example, thepassivation film 841 is formed of transparent SiN (silicon nitride)having a waterproofing property.

A ceiling portion of the passivation film 841 is consecutively formedbetween the passivation film 701 and the planarization film 75 andbetween the light shielding film 76 and the planarization film 75, andcomes into contact with the top surfaces of the passivation film 701 andthe light shielding film 76 and the bottom surface of the planarizationfilm 75. Here, in a pad region A2 in which the light shielding film 76is not formed and a scribe region A3, the ceiling portion is formedbetween the passivation film 701 and the planarization film 75, and thetop surface of the passivation film 701 and the bottom surface of theplanarization film 75 comes into contact with.

The passivation film 841 formed in the ceiling portion is formed tocover the entire region surrounded by the sidewall portion excluding aportion in which a pad opening portion 842 is formed.

In the pad region A2 of the chip 850, grooves (slits) are formed at bothsides of the pad opening portion 842, and a passivation film and ahydrophobic film are formed in the grooves.

A groove 851-1 is formed on a pixel region A1 side of the pad openingportion 842, and on the inner wall of the groove 851-1, a hydrophobicfilm 853-1 is formed to be stacked on a passivation film 852-1, and ahydrophobic film 853-2 is formed to be stacked on a passivation film852-2. The groove 851-1 is filled with the same material as the materialfor forming the planarization film 75 and formed to be consecutive tothe planarization film 75.

Similarly, a groove 851-2 is formed on the scribe region A3 side of thepad opening portion 842, and on the inner wall of the groove 851-2, ahydrophobic film 853-3 is formed to be stacked on a passivation film852-3, and a hydrophobic film 853-4 is formed to be stacked on apassivation film 852-4. The groove 851-2 is filled with the samematerial as the material for forming the planarization film 75.

The groove 851 is formed such that up to a part of a silicon substrate73 in which a photodiode 74 is formed is excavated. The passivation film852 and the hydrophobic film 853 are formed on the inner side of thegroove 851. In other words, the passivation film 852 is formed to coverfrom the upper end of the passivation film 701 to the part of thesilicon substrate 73, and the front end of the passivation film 852 isformed to come into contact with the silicon substrate 73.

The hydrophobic film 853 is formed to cover from the upper end of thepassivation film 841 to the part of the silicon substrate 73, and thefront end of the hydrophobic film 853 is formed to come into contactwith the silicon substrate 73. In other words, the hydrophobic film 853is formed to cover the passivation film 852.

A groove (slit) is formed in the scribe region A3, and a hydrophobicfilm is formed in the groove. A groove 855 is formed in the scriberegion A3, and on the inner wall of the groove 855, a hydrophobic film857-1 is formed to be stacked on a passivation film 856-1, and ahydrophobic film 857-2 is formed to be stacked on a passivation film856-2.

The groove 855 is filled with the same material as the material forforming the planarization film 75.

Similarly to the groove 851, the groove 855 is formed such that up to apart of the silicon substrate 73 in which the photodiode 74 is formed isexcavated. The passivation film 856 and the hydrophobic film 857 areformed on the inner side of the groove 855. In other words, thepassivation film 856 is formed to cover from the upper end of thepassivation film 701 to the part of the silicon substrate 73, and thefront end of the passivation film 856 is formed to come into contactwith the silicon substrate 73.

The hydrophobic film 857 is formed to cover from the upper end of thepassivation film 841 to the part of the silicon substrate 73, and thefront end of the hydrophobic film 857 is formed to come into contactwith the silicon substrate 73. In other words, the hydrophobic film 857is formed to cover the passivation film 856.

As the groove is formed, and the passivation film and the hydrophobicfilm are formed as described above, the region including the pixelregion A1 in which the photodiode 74 is arranged is surrounded by thesilicon substrate 73, passivation film, and the hydrophobic film havingthe waterproofing property without a gap. As a result, intrusion ofmoisture or impurities into the photodiode 74 is prevented.

As described above, according to the chip 850 of the (7-16)-thembodiment, intrusion of moisture or impurities into the chip 850 isprevented by the passivation film and the hydrophobic film. Thus, thechip 850 with the improved moisture-proof performance can beimplemented.

Since there is a stacked film interface on the pad opening portion 842and the chip edge, moisture is more likely to intrude into the padopening portion 842 and the chip edge than the surface of the chip. Asthe groove and the hydrophobic film are formed in the pad openingportion 842 and the chip edge, and the stacked film interface is coveredwith the hydrophobic film, intrusion of moisture or impurities into thechip can be prevented.

Further, as the hydrophobic film is formed in the sidewall portion (thescribe region A3), force applied to each film interface at the time ofdicing can be expected to be mitigated, and a possibility that filmpeeling or a crack will occur can be reduced.

Further, even when film peeling or a crack occurs, as the groove isformed, the occurrence of film peeling or a crack can be prevented bythe groove, and the pad region A2 can be prevented from beinginfluenced.

It is possible to reduce a possibility that film peeling or a crack willoccur and reduce influence even when film peeling or a crack occurs, andthus the moisture-proof performance of the chip can be further improved.

Further, since the portion in which the groove is formed is filled withthe same material as the material for forming the planarization film 75,the configuration in which intrusion of moisture or the like is notallowed can be provided, and the moisture-proof performance can befurther improved.

(7-17)-Th Embodiment

The (7-1)-st to the (7-16)-th embodiments have been described inconnection with the examples in which the present technology is appliedto the backside-illumination type CMOS image sensors, but the presenttechnology can be applied even to surface-illumination type CMOS imagesensors.

FIG. 81 is a diagram illustrating a configuration of a chip when thepresent technology is applied to a surface-illumination type CMOS imagesensor, that is, a diagram illustrating another configuration of a chipaccording to the seventh embodiment.

A plurality of photodiodes 862 serving as photoelectric conversion unitsof pixels are formed on the surface of a silicon substrate 861 of a chip860 at certain intervals.

An inter-layer insulating film 863 is formed on the silicon substrate861 and the photodiode 862. In or on the inter-layer insulating film863, interconnection layer metals 864 are vertically formed between theneighboring photodiodes 862.

In other words, the chip 860 is configured as a surface-illuminationtype CMOS image sensor in which the interconnection layers are formedabove (at the surface side) of the photodiodes 862. The interconnectionlayer metal 864 has a function of a light shielding film for preventinglight from leaking into a neighboring pixel as well.

A planarization film 865 for planarizing a region in which a colorfilter is formed is formed on the inter-layer insulating film 863 andthe topmost interconnection layer metal 864.

A color filter layer 866 is formed on the planarization film 865. In thecolor filter layer 866, color filters are formed in units of pixels,and, for example, colors of the color filters are arranged according toa Bayer array.

A planarization film 867 and a microlens passivation film 868 are formedon the color filter layer 866. The planarization film 867 is formedbetween the color filter layer 866 and the microlens passivation film868 in order to planarize the region in which the microlens is formed.

For example, the microlens passivation film 868 is formed of SiN that istransparent and has a waterproofing property, and performs the functionsof the microlens layer 79 and the passivation film 721 of FIG. 66 aswell.

Similarly to the chip of the backside-illumination type CMOS imagesensor, the chip 860 is roughly divided into a pixel region A1, a padregion A2, a scribe region A3, and the remaining region. Further, themicrolens passivation film 868 includes a ceiling portion, a porous wallportion, and a sidewall portion.

The microlens passivation film 868 in the ceiling portion is formed foreach pixel as the microlens for collecting light onto the photodiode 862of each pixel in the pixel region A1. Further, the microlens passivationfilm 868 in the ceiling portion is formed to cover the entire regionsurrounded by the sidewall portion excluding a portion in which a padopening portion 869 is formed.

A microlens passivation film 871-1 and a microlens passivation film871-2 formed in the porous wall portion are formed to cover the innerwall of the pad opening portion 869. Further, the outer walls of themicrolens passivation film 871-1 and the microlens passivation film871-2 formed in the porous wall portion come into contact with theplanarization film 865 and the planarization film 867, and the lowerends of the microlens passivation film 871-1 and the microlenspassivation film 871-2 formed in the porous wall portion come intocontact with the top surface of the electrode pad 870.

A microlens passivation film 873 formed in the sidewall portion isformed to cover a range of the side surface of the chip 860 from theupper end of the planarization film 867 to a part of the siliconsubstrate 861. Further, the microlens passivation film 873 formed in thesidewall portion is vertical to the surface of the silicon substrate861, and comes into contact with the side surface of the siliconsubstrate 861.

As a result, the pixel region A1 in which the photodiode 862 is arrangedand the region including the color filter layer 866 are surrounded bythe silicon substrate 861, the microlens passivation film 868, themicrolens passivation film 871, the microlens passivation film 873having the waterproofing property without a gap. As a result, intrusionof moisture or impurities into the surface of the photodiode 862 and thecolor filter layer 866 is prevented, and an increase in a dark currentand a change in spectral characteristics of a color filter areprevented.

Further, the microlens passivation film 868 functions as both amicrolens and a passivation film having a waterproofing property, andthus it is possible to reduce the number of stacked layers of the chip860 and the number of manufacturing processes.

In the chip 860 illustrated in FIG. 81, the hydrophobic film is formedin the porous wall portion and the sidewall portion.

In the chip 860 illustrated in FIG. 81, a hydrophobic film 872-1 isformed at the pixel region A1 side of the pad opening portion 869, and ahydrophobic film 872-2 is formed at the scribe region A3 side of the padopening portion 869.

The hydrophobic film 872 formed in the pad opening portion 869 is formedto cover the inner wall of the pad opening portion 869, and covers fromthe upper end of the microlens passivation film 868 to a part of theplanarization film 865. The front end of the hydrophobic film 872 comesinto contact with the top surface of the electrode pad 870. In otherwords, the hydrophobic film 872 is formed to cover the microlenspassivation film 871.

A hydrophobic film 874 is formed in the sidewall portion. Thehydrophobic film 874 is formed in the sidewall portion covers the sidesurface of the chip 860 from the upper end of the microlens passivationfilm 868 to a part of the silicon substrate 861. The front end of thehydrophobic film 874 comes into contact with the silicon substrate 861.In other words, the hydrophobic film 874 is formed to cover themicrolens passivation film 873.

As described above, the inner wall of each pad opening portion 869 ofthe chip 860 is covered with the hydrophobic film 872 without a gap.Further, the sidewall portion of the chip 860 is covered with thehydrophobic film 874 without a gap.

Since there is a stacked film interface in the porous wall portion andthe sidewall portion, moisture is more likely to intrude into the porouswall portion and the sidewall portion than the surface of the chip. Asthe hydrophobic film is formed in the porous wall portion and thesidewall portion to cover the stacked film interface, intrusion ofmoisture or impurities into the chip can be prevented.

Further, as the microlens passivation film and the hydrophobic film areformed in the sidewall portion (the scribe region A3), force applied toan interface between films at the time of dicing can be mitigated, and apossibility that film peeling or a crack will occur can be reduced. Apossibility that film peeling or a crack will occur can be reduced, andthus the moisture-proof performance of the chip can be further improved.

As described above, the chip 860 illustrated in FIG. 81 has a structurein which intrusion of moisture or impurities is prevented by the film inwhich the two layers of the microlens passivation film and thehydrophobic film are stacked. Thus, the chip 860 with the improvedmoisture-proof performance can be implemented.

(7-18)-Th Embodiment

FIG. 82 illustrates another configuration of a chip according to theseventh embodiment. A chip 880 illustrated in FIG. 82 configures asurface-illumination type CMOS image sensor. In the chip 880 illustratedin FIG. 82, parts having the same configuration as in the chip 860illustrated in FIG. 81 are denoted by the same reference numerals, andthen a description will proceed.

A pixel region A1 of the chip 880 illustrated in FIG. 82 has aconfiguration similar to the pixel region A1 of the chip 860 illustratedin FIG. 81, but a difference lies in that grooves (slits) are formed ina pad region A2 and a scribe region A3.

In the pad region A2 of the chip 880, grooves (slits) are formed at bothsides of the pad opening portion 869, and a microlens passivation filmand a hydrophobic film are formed in the grooves. A groove 881-1 isformed on the pixel region A1 side of the pad opening portion 869, andon the inner wall of the groove 881-1, a hydrophobic film 883-1 isformed to be stacked on a microlens passivation film 882-1, and ahydrophobic film 883-2 is formed to be stacked on a microlenspassivation film 882-2.

Similarly, a groove 881-2 is formed on the scribe region A3 side of thepad opening portion 869, and on the inner wall of the groove 881-2, ahydrophobic film 883-3 is formed to be stacked on a microlenspassivation film 882-3, and a hydrophobic film 883-4 is formed to bestacked on a microlens passivation film 882-4.

The groove 881 is formed such that up to a part of the silicon substrate861 in which the photodiode 862 is formed is excavated. The microlenspassivation film 882 and the hydrophobic film 883 are formed on theinner side of the groove 881. In other words, the microlens passivationfilm 882 is formed to cover from the upper end of the planarization film867 to a part of the silicon substrate 861, and the front end of themicrolens passivation film 882 is formed to come into contact with thesilicon substrate 861.

The hydrophobic film 883 is formed to cover from the upper end of themicrolens passivation film 868 to a part of the silicon substrate 861,and the front end of the hydrophobic film 883 is formed to come intocontact with the silicon substrate 861. In other words, the hydrophobicfilm 883 is formed to cover the microlens passivation film 882.

A groove (slit) is formed in the scribe region A3, and a hydrophobicfilm is formed in the groove. A groove 884 is formed in the scriberegion A3, and on the inner wall of the groove 884, a hydrophobic film886-1 is formed to be stacked on a microlens passivation film 885-1, anda hydrophobic film 886-2 is formed to be stacked on a microlenspassivation film 885-2.

Similarly to the groove 881, the groove 884 is formed such that up to apart of the silicon substrate 861 in which the photodiode 862 is formedis excavated. The microlens passivation film 885 and the hydrophobicfilm 886 are formed on the inner side of the groove 884.

In other words, the microlens passivation film 885 is formed to coverfrom the upper end of the planarization film 867 to a part of thesilicon substrate 861, and the front end of the microlens passivationfilm 885 is formed to come into contact with the silicon substrate 861.

The hydrophobic film 886 is formed to cover from the upper end of themicrolens passivation film 868 to a part of the silicon substrate 861,and the front end of the hydrophobic film 886 is formed to come intocontact with the silicon substrate 861. In other words, the hydrophobicfilm 886 is formed to cover the microlens passivation film 885.

As the groove is formed, and the microlens passivation film and thehydrophobic film are formed as described above, the pixel region A1 inwhich the photodiode 862 is arranged and the region including the colorfilter layer 866 are surrounded by the silicon substrate 861, themicrolens passivation film, and the hydrophobic film having thewaterproofing property without a gap. As a result, intrusion of moistureor impurities into the photodiode 862 and the color filter layer 866 isprevented, and an increase in a dark current and a change in spectralcharacteristics of a color filter are prevented.

As described above, according to the chip 880 illustrated in FIG. 82,intrusion of moisture or impurities into the chip 880 is prevented bythe microlens passivation film and the hydrophobic film. Thus, the chip880 with the improved moisture-proof performance can be implemented.

Since there is a stacked film interface on the pad opening portion 869and the chip edge, moisture is more likely to intrude into the padopening portion 869 and the chip edge than the surface of the chip. Asthe groove and the hydrophobic film are formed in the pad openingportion 869 and the chip edge, and the stacked film interface is coveredwith the hydrophobic film, intrusion of moisture or impurities into thechip can be prevented.

Further, as the hydrophobic film is formed in the sidewall portion (thescribe region A3), force applied to each film interface at the time ofdicing can be expected to be mitigated, and a possibility that filmpeeling or a crack will occur can be reduced.

Further, even when film peeling or a crack occurs, as the groove isformed, the occurrence of film peeling or a crack can be prevented bythe groove, and the pad region A2 can be prevented from beinginfluenced.

It is possible to reduce a possibility that film peeling or a crack willoccur and reduce influence even when film peeling or a crack occurs, andthus the moisture-proof performance of the chip can be further improved.

(7-19)-Th Embodiment

FIG. 83 illustrates another configuration of a chip according to theseventh embodiment. A chip 890 illustrated in FIG. 83 configures asurface-illumination type CMOS image sensor. In the chip 890 illustratedin FIG. 83, parts having the same configuration as in the chip 860illustrated in FIG. 81 are denoted by the same reference numerals, andthen a description will proceed.

The chip 890 of FIG. 83 has a configuration in which the planarizationfilm 867 is removed from the chip 860 of FIG. 81. In other words, theceiling portion of a microlens passivation film 868 of the chip 890illustrated in FIG. 83 comes into contact with a color filter layer 866.

As a result, the chip 890 is slightly lower in flatness of a microlensthan the chip 860 of FIG. 81, but it is possible to realize a reductionin a manufacturing process and a cost reduction while implementing thesame waterproofing effect.

In the chip 890 of FIG. 83, similarly to the chip 860 of FIG. 81, forexample, the microlens passivation film 868 is formed of SiN that istransparent and has a waterproofing property, and includes a ceilingportion, a porous wall portion, and a sidewall portion.

The microlens passivation film 868 formed in the ceiling portion isformed for each pixel as the microlens for collecting light onto aphotodiode 862 of each pixel in a pixel region A1. Further, themicrolens passivation film 868 in the ceiling portion is formed to coverthe entire region surrounded by the sidewall portion excluding theportion in which a pad opening portion 869 is formed.

A microlens passivation film 891-1 and a microlens passivation film891-2 formed in the porous wall portion are formed to cover the innerwall of the pad opening portion 869. Further, the microlens passivationfilm 891-1 and the microlens passivation film 891-2 formed in the porouswall portion comes into contact with a planarization film 865, and thelower ends of the microlens passivation film 891-1 and the microlenspassivation film 891-2 come into contact with the top surface of anelectrode pad 870.

A microlens passivation film 893 formed in the sidewall portion isformed to cover a range of the side surface of the chip 890 from theupper end of the planarization film 865 to a part of a silicon substrate861. Further, the microlens passivation film 893 formed in the sidewallportion is vertical to the surface of the silicon substrate 861, andcomes into contact with the side surface of the silicon substrate 861.

As a result, the pixel region A1 in which the photodiode 862 is arrangedand the region including the color filter layer 866 are surrounded bythe silicon substrate 861 and the microlens passivation film 868 havingthe waterproofing property without a gap. As a result, intrusion ofmoisture or impurities into the surface of the photodiode 862 and thecolor filter layer 866 is prevented, and an increase in a dark currentand a change in spectral characteristics of a color filter areprevented.

Further, the microlens passivation film 868 functions as both amicrolens and a passivation film having a waterproofing property, andthus it is possible to reduce the number of stacked layers of the chip890 and the number of manufacturing processes.

In the chip 890 illustrated in FIG. 83, the hydrophobic film is formedin the porous wall portion and the sidewall portion.

In the chip 890 illustrated in FIG. 83, a hydrophobic film 892-1 isformed at the pixel region A1 side of the pad opening portion 869, and ahydrophobic film 892-2 is formed at the scribe region A3 side of the padopening portion 869.

The hydrophobic film 892 formed in the pad opening portion 869 is formedto cover the inner wall of the pad opening portion 869 from the upperend of the microlens passivation film 868 to the electrode pad 870, andcomes into contact with the top surface of the electrode pad 870. Inother words, the hydrophobic film 892 is formed to cover the microlenspassivation film 891.

A hydrophobic film 894 is formed in the sidewall portion. Thehydrophobic film 894 formed in the sidewall portion covers the sidesurface of the chip 890 from the upper end of the microlens passivationfilm 868 to a part of the silicon substrate 861. Further, the front endof the hydrophobic film 894 comes into contact with the siliconsubstrate 861. In other words, the hydrophobic film 894 is formed tocover the microlens passivation film 893.

As described above, the inner wall of each pad opening portion 869 ofthe chip 890 is covered with the hydrophobic film 892 without a gap.Further, the sidewall portion of the chip 890 is covered with thehydrophobic film 894 without a gap.

Since there is a stacked film interface in the porous wall portion andthe sidewall portion, moisture is more likely to intrude into the porouswall portion and the sidewall portion than the surface of the chip. Asthe hydrophobic film is formed in the porous wall portion and thesidewall portion to cover the stacked film interface, intrusion ofmoisture or impurities into the chip can be prevented.

Further, as the microlens passivation film and the hydrophobic film areformed in the sidewall portion (the scribe region A3), force applied toan interface between films at the time of dicing can be mitigated, and apossibility that film peeling or a crack will occur can be reduced. Apossibility that film peeling or a crack will occur can be reduced, andthus the moisture-proof performance of the chip can be further improved.

As described above, the chip 890 illustrated in FIG. 83 has a structurein which intrusion of moisture or impurities is prevented by the film inwhich the two layers of the microlens passivation film and thehydrophobic film are stacked. Thus, the chip 890 with the improvedmoisture-proof performance can be implemented.

(7-20)-Th Embodiment

FIG. 84 illustrates another configuration of a chip according to theseventh embodiment. A chip 900 illustrated in FIG. 84 configures asurface-illumination type CMOS image sensor. In the chip 900 illustratedin FIG. 84, parts having the same configuration as in the chip 880illustrated in FIG. 82 are denoted by the same reference numerals, andthen a description will proceed.

The chip 900 of FIG. 84 has a configuration in which the planarizationfilm 867 is removed from the chip 880 of FIG. 82. In other words, theceiling portion of a microlens passivation film 868 of the chip 900illustrated in FIG. 84 comes into contact with a color filter layer 866.

As a result, the chip 900 is slightly lower in flatness of a microlensthan the chip 880 of FIG. 82, but it is possible to realize a reductionin a manufacturing process and a cost reduction while implementing thesame waterproofing effect.

In the chip 900 of FIG. 84, similarly to the chip 880 of FIG. 82, forexample, a microlens passivation film 868 is formed of SiN that istransparent and has a waterproofing property, and includes a ceilingportion, a porous wall portion, and a sidewall portion.

The microlens passivation film 868 in the ceiling portion is formed foreach pixel as the microlens for collecting light onto a photodiode 862of each pixel in a pixel region A1. Further, the microlens passivationfilm 868 in the ceiling portion is formed to cover the entire regionsurrounded by the sidewall portion excluding the portion in which a padopening portion 869, a groove 901, and a groove 904 are formed.

In a pad region A2 of the chip 900, grooves (slits) are formed at bothsides of the pad opening portion 869, and a microlens passivation filmand a hydrophobic film are formed in the grooves. A groove 901-1 isformed on the pixel region A1 side of the pad opening portion 869, andon the inner wall of the groove 901-1, a hydrophobic film 903-1 isformed to be stacked on a microlens passivation film 902-1, and ahydrophobic film 903-2 is formed to be stacked on a microlenspassivation film 902-2.

Similarly, a groove 901-2 is formed on a scribe region A3 side of thepad opening portion 869, and on the inner wall of the groove 901-2, ahydrophobic film 903-3 is formed to be stacked on a microlenspassivation film 902-3, and a hydrophobic film 903-4 is formed to bestacked on a microlens passivation film 902-4.

The groove 901 is formed such that up to a part of a silicon substrate861 in which a photodiode 862 is formed is excavated. The microlenspassivation film 902 and the hydrophobic film 903 are formed on theinner side of the groove 901. In other words, the microlens passivationfilm 902 is formed to cover from the upper end of the planarization film865 to a part of the silicon substrate 861, and the front end of themicrolens passivation film 902 is formed to come into contact with thesilicon substrate 861.

The hydrophobic film 903 is formed to cover the upper end of themicrolens passivation film 868 to a part of the silicon substrate 861,and the front end of the hydrophobic film 903 is formed to come intocontact with the silicon substrate 861. In other words, the hydrophobicfilm 903 is formed to cover the microlens passivation film 902.

A groove (slit) is formed in a scribe region A3, and a hydrophobic filmis formed in the groove. A groove 904 is formed in the scribe region A3,and on the inner wall of the groove 904, a hydrophobic film 906-1 isformed to be stacked on a microlens passivation film 905-1, and ahydrophobic film 906-2 is formed to be stacked on a microlenspassivation film 905-2.

Similarly to the groove 901, the groove 904 is formed such that up to apart of the silicon substrate 861 in which the photodiode 862 is formedis excavated. The microlens passivation film 905 and the hydrophobicfilm 906 are formed on the inner side of the groove 904.

In other words, the microlens passivation film 905 is formed to coverfrom the upper end of the planarization film 865 to a part of thesilicon substrate 861, and the front end of the microlens passivationfilm 905 is formed to come into contact with the silicon substrate 861.

The hydrophobic film 906 is formed to cover the upper end of themicrolens passivation film 868 to a part of the silicon substrate 861,and the front end of the hydrophobic film 906 is formed to come intocontact with the silicon substrate 861. In other words, the hydrophobicfilm 906 is formed to cover the microlens passivation film 905.

As the groove is formed, and the microlens passivation film and thehydrophobic film are formed as described above, the pixel region A1 inwhich the photodiode 862 is arranged and the region including the colorfilter layer 866 are surrounded by the silicon substrate 861, themicrolens passivation film, and the hydrophobic film having thewaterproofing property without a gap. As a result, intrusion of moistureor impurities into the photodiode 862 and the color filter layer 866 isprevented, and an increase in a dark current and a change in spectralcharacteristics of a color filter are prevented.

As described above, according to the chip 900 illustrated in FIG. 84,intrusion of moisture or impurities into the chip 900 is prevented bythe microlens passivation film and the hydrophobic film. Thus, the chip900 with the improved moisture-proof performance can be implemented.

Since there is a stacked film interface on the pad opening portion 869and the chip edge, moisture is more likely to intrude into the padopening portion 869 and the chip edge than the surface of the chip. Asthe groove and the hydrophobic film are formed in the pad openingportion 869 and the chip edge, and the stacked film interface is coveredwith the hydrophobic film, intrusion of moisture or impurities into thechip can be prevented.

Further, as the hydrophobic film is formed in the sidewall portion (thescribe region A3), force applied to each film interface at the time ofdicing can be expected to be mitigated, and a possibility that filmpeeling or a crack will occur can be reduced.

Further, even when film peeling or a crack occurs, as the groove isformed, the occurrence of film peeling or a crack can be prevented bythe groove, and the pad region A2 can be prevented from beinginfluenced.

It is possible to reduce a possibility that film peeling or a crack willoccur and reduce influence even when film peeling or a crack occurs, andthus the moisture-proof performance of the chip can be further improved.

(7-21)-St Embodiment

FIG. 85 illustrates another configuration of a chip according to theseventh embodiment. A chip 910 illustrated in FIG. 85 configures asurface-illumination type CMOS image sensor. In the chip 910 illustratedin FIG. 85, parts having the same configuration as in the chip 860illustrated in FIG. 81 are denoted by the same reference numerals, andthen a description will proceed.

The chip 910 illustrated in FIG. 85 is different from the chip 860illustrated in FIG. 81 in that instead of the microlens passivation film868, a microlens layer 911 is formed to function as a microlens.

In the chip 910 illustrated in FIG. 85, a passivation film 912 forpreventing intrusion of moisture or impurities is formed between aninter-layer insulating film 863 and a planarization film 865. Aninterconnection layer metal 864 is formed on the top surface of theinter-layer insulating film 863, and in the portion in which theinterconnection layer metal 864 is formed, the passivation film 912 isformed between the interconnection layer metal 864 and a planarizationfilm 865.

The passivation film 912 is consecutively formed. For example, thepassivation film 912 is formed of transparent SiN (silicon nitride)having a waterproofing property.

A ceiling portion of the passivation film 912 is consecutively formedbetween the inter-layer insulating film 863 and the planarization film865 and between the interconnection layer metal 864 and theplanarization film 865, and comes into contact with the top surfaces ofthe inter-layer insulating film 863 and the interconnection layer metal864 and the bottom surface of the planarization film 865.

In a pad region A2 and a scribe region A3, the interconnection layermetal 864, the planarization film 865, and the color filter layer 866are not formed, and thus the passivation film 912 in the ceiling portionis formed between the inter-layer insulating film 863 and the microlenslayer 911, and comes into contact with the top surface of theinter-layer insulating film 863 and the bottom surface of the microlenslayer 911.

The passivation film 912 formed in the ceiling portion is formed tocover the entire region surrounded by the sidewall portion excluding theportion in which a pad opening portion 913 is formed.

The passivation film 912 formed in the sidewall portion is formed on theside surface of the chip 910 vertically to the surface of the siliconsubstrate 861 as a passivation film 915. The passivation film 915 in thesidewall portion covers a range of the side surface of the chip 910 fromthe upper end of the inter-layer insulating film 863 to a part of thesilicon substrate 861, and the inner wall of the sidewall portion comesinto contact with the silicon substrate 861.

Thus, excluding the portion in which the pad opening portion 913 isformed, the entire surface of the silicon substrate 861 including apixel region A1 is surrounded by the passivation film 912 in the ceilingportion and the passivation film 915 in the sidewall portion without agap.

As a result, intrusion of moisture or impurities from the surface (theupper portion) of the chip 910 is prevented by the passivation film 912in the ceiling portion. Further, intrusion of moisture or impuritiesfrom the side of the chip 910 is prevented by the passivation film 915in the sidewall portion. Furthermore, intrusion of moisture orimpurities from the bottom of the chip 910 is prevented by the bottomsurface of the silicon substrate 861.

As a result, for example, even when the chip 910 is placed in anenvironment in which water vapor pressure is high, and moisture israpidly diffused, an increase in a dark current or a change in spectralcharacteristics by intrusion of moisture or impurities into the surfaceof the photodiode 862 can be prevented.

Further, in the chip 910 illustrated in FIG. 85, the hydrophobic film isformed in the porous wall portion and the sidewall portion.

In the chip 910 illustrated in FIG. 85, a hydrophobic film 914-1 isformed at the pixel region A1 side of the pad opening portion 913, and ahydrophobic film 914-2 is formed at the scribe region A3 side of the padopening portion 913.

The hydrophobic film 914 formed in the pad opening portion 913 is formedto cover the inner wall of the pad opening portion 913, and cover theside surface of the passivation film 912 at the pad opening portion 913side. The front end of the hydrophobic film 914 comes into contact withthe top surface of the electrode pad 870.

A hydrophobic film 916 is formed at the chip edge. The hydrophobic film916 formed in the sidewall portion covers the side surface of the chip900 from the upper end of the passivation film 912 to a part of thesilicon substrate 861. The front end of the hydrophobic film 916 comesinto contact with the silicon substrate 861. In other words, thehydrophobic film 916 is formed to cover the passivation film 915.

As described above, the inner wall of each pad opening portion 913 ofthe chip 910 is covered with the hydrophobic film 914 without a gap. Thesidewall portion of the chip 910 is covered with the hydrophobic film916 without a gap.

Since there is a stacked film interface in the porous wall portion andthe sidewall portion, moisture is more likely to intrude into the porouswall portion and the sidewall portion than the surface of the chip. Asthe hydrophobic film is formed in the porous wall portion and thesidewall portion to cover the stacked film interface, intrusion ofmoisture or impurities into the chip can be prevented.

Further, as the passivation film and the hydrophobic film are formed inthe sidewall portion (the scribe region A3), force applied to aninterface between films at the time of dicing can be mitigated, and apossibility that film peeling or a crack will occur can be reduced. Apossibility that film peeling or a crack will occur can be reduced, andthus the moisture-proof performance of the chip can be further improved.

As described above, the chip 910 illustrated in FIG. 85 has a structurein which intrusion of moisture or impurities is prevented by the film inwhich the two layers of the passivation film and the hydrophobic filmare stacked. Thus, the chip 910 with the improved moisture-proofperformance can be implemented.

(7-22)-Nd Embodiment

FIG. 86 illustrates another configuration of a chip according to theseventh embodiment. A chip 920 illustrated in FIG. 86 configures asurface-illumination type CMOS image sensor. In the chip 920 illustratedin FIG. 86, parts having the same configuration as in the chip 910illustrated in FIG. 85 are denoted by the same reference numerals, andthen a description will proceed.

In the chip 920 illustrated in FIG. 86, similarly to the chip 910illustrated in FIG. 85, instead of the microlens passivation film 868, amicrolens layer 911 is formed to function as a microlens.

In the chip 920 illustrated in FIG. 86, similarly to the chip 910illustrated in FIG. 85, a passivation film 912 for preventing intrusionof moisture or impurities is formed between an inter-layer insulatingfilm 863 and a planarization film 865. An interconnection layer metal864 is formed on the top surface of the inter-layer insulating film 863,and in the portion in which the interconnection layer metal 864 isformed, the passivation film 912 is formed between the interconnectionlayer metal 864 and the planarization film 865.

A pixel region A1 and a pad region A2 of the chip 920 illustrated inFIG. 86 have the same configurations as the pixel region A1 and the padregion A2 as the chip 910 illustrated in FIG. 85.

A groove 921 is formed in the scribe region A3 of the chip 920, and apassivation film 922 and a hydrophobic film 923 are formed in the groove921. In other words, the groove 921 is formed in a scribe region A3, andon the inner wall of the groove 921, a hydrophobic film 923-1 is formedto be stacked on a passivation film 922-1, and a hydrophobic film 923-2is formed to be stacked on a passivation film 922-2.

The groove 921 is formed such that up to a part of the silicon substrate861 in which the photodiode 862 is formed is excavated. The passivationfilm 922 and the hydrophobic film 923 are formed on the inner side ofthe groove 921.

In other words, the passivation film 922 is formed to cover from theupper end of the inter-layer insulating film 863 to a part of thesilicon substrate 861, and the front end of the passivation film 922 isformed to come into contact with the silicon substrate 861.

The hydrophobic film 923 is formed to cover from the upper end of thepassivation film 912 to a part of the silicon substrate 861, and thefront end of the hydrophobic film 923 is formed to come into contactwith the silicon substrate 861. The hydrophobic film 923 is formed tocover the entire side surface of the passivation film 922.

As the groove is formed, and the passivation film and the hydrophobicfilm are formed as described above, the pixel region A1 in which thephotodiode 862 is arranged is surrounded by the silicon substrate 861,the passivation film, and the hydrophobic film having the waterproofingproperty without a gap. As a result, intrusion of moisture or impuritiesinto the photodiode 862 is prevented, and an increased in a dark currentis prevented.

As described above, according to the chip 920 illustrated in FIG. 86,intrusion of moisture or impurities into the chip 920 is prevented bythe passivation film and the hydrophobic film. Thus, the chip 920 withthe improved moisture-proof performance can be implemented.

Since there is a stacked film interface on the pad opening portion 913and the chip edge, moisture or the like is more likely to intrude intothe pad opening portion 913 and the chip edge than the surface of thechip. As the groove and the hydrophobic film are formed in the padopening portion 913 and the chip edge, and the stacked film interface iscovered with the hydrophobic film, intrusion of moisture or impuritiesinto the chip can be prevented.

Further, as the hydrophobic film is formed in the sidewall portion (thescribe region A3), force applied to each film interface at the time ofdicing can be expected to be mitigated, and a possibility that filmpeeling or a crack will occur can be reduced.

Further, even when film peeling or a crack occurs, as the groove isformed, the occurrence of film peeling or a crack can be prevented bythe groove, and the pad region A2 can be prevented from beinginfluenced.

It is possible to reduce a possibility that film peeling or a crack willoccur and reduce influence even when film peeling or a crack occurs, andthus the moisture-proof performance of the chip can be further improved.

(7-23)-Rd Embodiment

For example, a chip size package (CSP) technique can be employed as amethod of packaging each of the chips described in the (7-1)-st to(7-22)-nd embodiments.

FIG. 87 is a cross-sectional view schematically illustrating anexemplary configuration of a semiconductor package 930 obtained bypackaging the chip 720 illustrated in FIG. 66 by the CSP technique. InFIG. 87, parts corresponding to those of FIG. 66 are denoted by the samereference numerals, and a description thereof will be appropriatelyomitted.

In the semiconductor package 930, transparent seal resin 931 is formedon the surface of the chip 720, and a glass substrate 932 is stacked onthe seal resin 931. Thus, the chip 720 is protected from an externalenvironment.

Further, the pad opening portion 703 is also filled with the seal resin931. In other words, the inside of the pad opening portion 703surrounded by a hydrophobic film 724 formed in the porous wall portionis filled with the seal resin 931. Further, a hydrophobic film 725formed in the sidewall portion is covered with the seal resin 931.

As the pad opening portion 703 is filled with the seal resin 931, forexample, when external force is applied to the semiconductor package930, the portion filled with the seal resin 931 can be expected toundertake a shock absorber, and thus tolerance to external pressure orthe like can be improved.

Further, as the hydrophobic film 725 formed in the sidewall portion iscovered with the seal resin 931, force applied to a film interface atthe time of dicing can be mitigated, and a possibility that film peelingor a crack will occur at the time of dicing can be reduced. Furthermore,since film peeling or a crack does not occur, the moisture-proofperformance of the chip can be improved.

Further, when moisture intrudes into the seal resin 931, a component ofan adhesive included in the seal resin 931 is likely to melt into theintruded moisture, and thus the quality of the chip 720 may deteriorate.However, since intrusion of moisture into the surface of a photodiode 74and a color filter layer 77 of the chip 720 is prevented by the functionof the passivation film 721 as described above, deterioration in thequality of the chip 720 is prevented.

Further, since there are the stacked film interfaces in the portion inwhich the pad opening portion is formed and the chip edge, moisture orthe like is more likely to intrude to the portion in which the padopening portion is formed and the chip edge than the surface of thechip. As the hydrophobic film as well as the passivation film is formedin the portions to cover the stacked film interface, even when moistureintrudes into the seal resin 931, since intrusion of moisture into thesurface of the photodiode 74 and the color filter layer 77 of the chip720 is prevented, a deterioration of the quality of the chip 720 can beprevented.

(7-24)-Th Embodiment

FIG. 88 is a cross-sectional view schematically illustrating anexemplary configuration of a semiconductor package 940 obtained bypackaging the chip 730 illustrated in FIG. 68 by the CSP technique. InFIG. 88, parts corresponding to those of FIG. 68 are denoted by the samereference numerals, and a description thereof will be appropriatelyomitted.

In the semiconductor package 940, transparent seal resin 931 is formedon the surface of the chip 730, and a glass substrate 932 is stacked onthe seal resin 931. Thus, the chip 730 is protected from an externalenvironment.

Further, a pad opening portion 703, a groove 731-1, a groove 731-2, anda groove 734 are also filled with the seal resin 931. The chip edge of ascribe region A3 is also filled with the seal resin 931.

As the pad opening portion 703, the groove 731-1, the groove 731-2, andthe groove 734 are filled with the seal resin 931, for example, whenexternal force is applied to the semiconductor package 930, the portionsfilled with the seal resin 931 can be expected to undertake a shockabsorber, and thus tolerance to external pressure or the like can beimproved.

Further, as a scribe region A3 is also filled with the seal resin 931,force applied to a film interface at the time of dicing can bemitigated, and a possibility that film peeling or a crack will occur atthe time of dicing can be reduced. Furthermore, since film peeling or acrack does not occur, the moisture-proof performance of the chip can beimproved.

Further, when moisture intrudes into the seal resin 931, a component ofan adhesive included in the seal resin 931 is likely to melt into theintruded moisture, and thus the quality of the chip 730 may deteriorate.However, since intrusion of moisture into the surface of the photodiode74 and the color filter layer 77 of the chip 730 is prevented by thefunction of the passivation film 721 as described above, deteriorationin the quality of the chip 730 is prevented.

Since there is a stacked film interface on the pad opening portion 703and the chip edge, moisture is more likely to intrude into the padopening portion 703 and the chip edge than the surface of the chip. Asthe groove and the hydrophobic film are formed in the pad openingportion 703 and the chip edge, and the stacked film interface is coveredwith the hydrophobic film, intrusion of moisture or impurities into thechip can be prevented.

Further, as the hydrophobic film is formed in the sidewall portion (thescribe region A3), force applied to each film interface at the time ofdicing can be expected to be mitigated, and a possibility that filmpeeling or a crack will occur can be reduced.

Further, even when film peeling or a crack occurs, as the groove isformed, the occurrence of film peeling or a crack can be prevented bythe groove, and a pad region A2 can be prevented from being influenced.

It is possible to reduce a possibility that film peeling or a crack willoccur and reduce influence even when film peeling or a crack occurs, andthus the moisture-proof performance of the chip can be further improved.

(7-25)-Th Embodiment

FIG. 89 is a cross-sectional view schematically illustrating anexemplary configuration of a semiconductor package 950 obtained bypackaging the chip 760 illustrated in FIG. 71 by the CSP technique. InFIG. 89, parts corresponding to those of FIG. 71 are denoted by the samereference numerals, and a description thereof will be appropriatelyomitted.

In the semiconductor package 950, transparent seal resin 931 is formedon the surface of the chip 760, and a glass substrate 932 is stacked onthe seal resin 931. Thus, the chip 760 is protected from an externalenvironment.

A pad opening portion 703 is filled with the seal resin 931. In otherwords, the inside surrounded by a hydrophobic film 764 formed in theporous wall portion is filled with the seal resin 931. Further, ahydrophobic film 766 formed in the sidewall portion is also covered withthe seal resin 931.

As the pad opening portion 703 is filled with the seal resin 931, forexample, when external force is applied to the semiconductor package950, the portion filled with the seal resin 931 can be expected toundertake a shock absorber, and thus tolerance to external pressure orthe like can be improved.

Further, as the hydrophobic film 766 formed in the sidewall portion iscovered with the seal resin 931, force applied to a film interface atthe time of dicing can be mitigated, and a possibility that film peelingor a crack will occur at the time of dicing can be reduced. Furthermore,since film peeling or a crack does not occur, the moisture-proofperformance of the chip can be improved.

Further, when moisture intrudes into the seal resin 931, a component ofan adhesive included in the seal resin 931 is likely to melt into theintruded moisture, and thus the quality of the chip 760 may deteriorate.However, since intrusion of moisture into the surface of a photodiode 74and a color filter layer 77 of the chip 760 is prevented by thefunctions of microlens passivation films 761, 763, and 765 as describedabove, deterioration in the quality of the chip 760 can be prevented.

Further, since there are the stacked film interfaces in the portion inwhich the pad opening portion is formed and the chip edge, moisture orthe like is more likely to intrude to the portion in which the padopening portion is formed and the chip edge than the surface of thechip. As the hydrophobic film as well as the microlens passivation filmis formed in the portions to cover the stacked film interface, even whenmoisture intrudes into the seal resin 931, since intrusion of moistureinto the surface of the photodiode 74 and the color filter layer 77 ofthe chip 760 is prevented, a deterioration of the quality of the chip760 can be prevented.

(7-26)-Th Embodiment

FIG. 90 is a cross-sectional view schematically illustrating anexemplary configuration of a semiconductor package 960 obtained bypackaging the chip 770 illustrated in FIG. 72 by the CSP technique. InFIG. 90, parts corresponding to those of FIG. 72 are denoted by the samereference numerals, and a description thereof will be appropriatelyomitted.

In the semiconductor package 960, transparent seal resin 931 is formedon the surface of the chip 770, and a glass substrate 932 is stacked onthe seal resin 931. Thus, the chip 770 is protected from an externalenvironment.

Further, a pad opening portion 703, a groove 771-1, a groove 771-2, anda groove 774 are also filled with the seal resin 931. A scribe region A3is also filled with the seal resin 931.

As the pad opening portion 703, the groove 771-1, the groove 771-2, andthe groove 774 are filled with the seal resin 931, for example, whenexternal force is applied to the semiconductor package 930, the portionsfilled with the seal resin 931 can be expected to undertake a shockabsorber, and thus tolerance to external pressure or the like can beimproved.

Further, as the scribe region A3 is also filled with the seal resin 931,force applied to a film interface at the time of dicing can bemitigated, and a possibility that film peeling or a crack will occur atthe time of dicing can be reduced. Furthermore, since film peeling or acrack does not occur, the moisture-proof performance of the chip can beimproved.

Further, when moisture intrudes into the seal resin 931, a component ofan adhesive included in the seal resin 931 is likely to melt into theintruded moisture, and thus the quality of the chip 770 may deteriorate.However, since intrusion of moisture into the surface of a photodiode 74and a color filter layer 77 of the chip 770 is prevented by thefunctions of microlens passivation films 761, 772, and 775 as describedabove, deterioration in the quality of the chip 770 is prevented.

Since there is a stacked film interface on the pad opening portion 703and the chip edge, moisture is more likely to intrude into the padopening portion 703 and the chip edge than the surface of the chip. Asthe groove and the hydrophobic film are formed in the pad openingportion 703 and the chip edge, and the stacked film interface is coveredwith the hydrophobic film, intrusion of moisture or impurities into thechip can be prevented.

Further, as the hydrophobic film is formed in the sidewall portion (thescribe region A3), force applied to each film interface at the time ofdicing can be expected to be mitigated, and a possibility that filmpeeling or a crack will occur can be reduced.

Further, even when film peeling or a crack occurs, as the groove isformed, the occurrence of film peeling or a crack can be prevented bythe groove, and a pad region A2 can be prevented from being influenced.

It is possible to reduce a possibility that film peeling or a crack willoccur and reduce influence even when film peeling or a crack occurs, andthus the moisture-proof performance of the chip can be further improved.

(7-27)-Th Embodiment

FIG. 91 is a cross-sectional view schematically illustrating anexemplary configuration of a semiconductor package 970 obtained bypackaging the chip 780 illustrated in FIG. 73 by the CSP technique. InFIG. 91, parts corresponding to those of FIG. 73 are denoted by the samereference numerals, and a description thereof will be appropriatelyomitted.

In the semiconductor package 970, transparent seal resin 931 is formedon the surface of the chip 780, and a glass substrate 932 is stacked onthe seal resin 931. Thus, the chip 780 is protected from an externalenvironment.

A pad opening portion 703 is filled with the seal resin 931. In otherwords, the inside surrounded by a hydrophobic film 782 formed in theporous wall portion is filled with the seal resin 931. Further, ahydrophobic film 784 formed in the sidewall portion is also covered withthe seal resin 931.

As a pad opening portion 703 is filled with the seal resin 931, forexample, when external force is applied to the semiconductor package970, the portion filled with the seal resin 931 can be expected toundertake a shock absorber, and thus tolerance to external pressure orthe like can be improved.

Further, as the hydrophobic film 784 formed in the sidewall portion iscovered with the seal resin 931, force applied to a film interface atthe time of dicing can be mitigated, and a possibility that film peelingor a crack will occur at the time of dicing can be reduced. Furthermore,since film peeling or a crack does not occur, the moisture-proofperformance of the chip can be improved.

Further, when moisture intrudes into the seal resin 931, a component ofan adhesive included in the seal resin 931 is likely to melt into theintruded moisture, and thus the quality of the chip 780 may deteriorate.However, since intrusion of moisture into the surface of a photodiode 74and a color filter layer 77 of the chip 780 is prevented by thefunctions of microlens passivation films 761, 781, and 783 as describedabove, deterioration in the quality of the chip 780 can be prevented.

Further, since there are the stacked film interfaces in the portion inwhich the pad opening portion is formed and the chip edge, moisture orthe like is more likely to intrude to the portion in which the padopening portion is formed and the chip edge than the surface of thechip. As the hydrophobic film as well as the microlens passivation filmis formed in the portions to cover the stacked film interface, even whenmoisture intrudes into the seal resin 931, since intrusion of moistureinto the surface of the photodiode 74 and the color filter layer 77 ofthe chip 780 is prevented, a deterioration of the quality of the chip780 can be prevented.

(7-28)-Th Embodiment

FIG. 92 is a cross-sectional view schematically illustrating anexemplary configuration of a semiconductor package 980 obtained bypackaging the chip 790 illustrated in FIG. 74 by the CSP technique. InFIG. 92, parts corresponding to those of FIG. 74 are denoted by the samereference numerals, and a description thereof will be appropriatelyomitted.

In the semiconductor package 980, transparent seal resin 931 is formedon the surface of the chip 790, and a glass substrate 932 is stacked onthe seal resin 931. Thus, the chip 790 is protected from an externalenvironment.

Further, a pad opening portion 703, a groove 791-1, a groove 791-2, anda groove 794 are also filled with the seal resin 931. Furthermore, thechip edge of a scribe region A3 is also filled with the seal resin 931.

As the pad opening portion 703, the groove 791-1, the groove 791-2, andthe groove 794 are filled with the seal resin 931, for example, whenexternal force is applied to the semiconductor package 980, the portionsfilled with the seal resin 931 can be expected to undertake a shockabsorber, and thus tolerance to external pressure or the like can beimproved.

Further, as the scribe region A3 is also filled with the seal resin 931,force applied to a film interface at the time of dicing can bemitigated, and a possibility that film peeling or a crack will occur atthe time of dicing can be reduced. Furthermore, since film peeling or acrack does not occur, the moisture-proof performance of the chip can beimproved.

Further, when moisture intrudes into the seal resin 931, a component ofan adhesive included in the seal resin 931 is likely to melt into theintruded moisture, and thus the quality of the chip 790 may deteriorate.However, since intrusion of moisture into the surface of a photodiode 74and a color filter layer 77 of the chip 790 is prevented by thefunctions of microlens passivation films 761, 792, and 795 as describedabove, deterioration in the quality of the chip 790 is prevented.

Since there is a stacked film interface on the pad opening portion 703and the chip edge, moisture is more likely to intrude into the padopening portion 703 and the chip edge than the surface of the chip. Asthe groove and the hydrophobic film are formed in the pad openingportion 703 and the chip edge, and the stacked film interface is coveredwith the hydrophobic film, intrusion of moisture or impurities into thechip can be prevented.

Further, as the hydrophobic film is formed in the sidewall portion (thescribe region A3), force applied to each film interface at the time ofdicing can be expected to be mitigated, and a possibility that filmpeeling or a crack will occur can be reduced.

Further, even when film peeling or a crack occurs, as the groove isformed, the occurrence of film peeling or a crack can be prevented bythe groove, and a pad region A2 can be prevented from being influenced.

It is possible to reduce a possibility that film peeling or a crack willoccur and reduce influence even when film peeling or a crack occurs, andthus the moisture-proof performance of the chip can be further improved.

(7-29)-Th Embodiment

FIG. 93 is a cross-sectional view schematically illustrating anexemplary configuration of a semiconductor package 990 obtained bypackaging the chip 800 illustrated in FIG. 75 by the CSP technique. InFIG. 93, parts corresponding to those of FIG. 75 are denoted by the samereference numerals, and a description thereof will be appropriatelyomitted.

In the semiconductor package 990, transparent seal resin 931 is formedon the surface of the chip 800, and a glass substrate 932 is stacked onthe seal resin 931. Thus, the chip 800 is protected from an externalenvironment.

A pad opening portion 802 is filled with the seal resin 931. In otherwords, the inside surrounded by a hydrophobic film 804 formed in theporous wall portion is filled with the seal resin 931. Further, ahydrophobic film 806 formed in the sidewall portion is also covered withthe seal resin 931.

As the pad opening portion 802 is filled with the seal resin 931, forexample, when external force is applied to the semiconductor package990, the portion filled with the seal resin 931 can be expected toundertake a shock absorber, and thus tolerance to external pressure orthe like can be improved.

Further, as the hydrophobic film 806 formed in the sidewall portion iscovered with the seal resin 931, force applied to a film interface atthe time of dicing can be mitigated, and a possibility that film peelingor a crack will occur at the time of dicing can be reduced. Furthermore,since film peeling or a crack does not occur, the moisture-proofperformance of the chip can be improved.

Further, when moisture intrudes into the seal resin 931, a component ofan adhesive included in the seal resin 931 is likely to melt into theintruded moisture, and thus the quality of the chip 800 may deteriorate.However, since intrusion of moisture into the surface of a photodiode 74and a color filter layer 77 of the chip 800 is prevented by thefunctions of passivation films 801, 803, and 805 as described above,deterioration in the quality of the chip 800 can be prevented.

Further, since there are the stacked film interfaces in the portion inwhich the pad opening portion is formed and the chip edge, moisture orthe like is more likely to intrude to the portion in which the padopening portion is formed and the chip edge than the surface of thechip. As the hydrophobic film as well as the passivation film is formedin the portions to cover the stacked film interface, even when moistureintrudes into the seal resin 931, since intrusion of moisture into thesurface of the photodiode 74 and the color filter layer 77 of the chip800 is prevented, a deterioration in the quality of the chip 800 can beprevented.

(7-30)-Th Embodiment

FIG. 94 is a cross-sectional view schematically illustrating anexemplary configuration of a semiconductor package 1000 obtained bypackaging the chip 810 illustrated in FIG. 76 by the CSP technique. InFIG. 94, parts corresponding to those of FIG. 76 are denoted by the samereference numerals, and a description thereof will be appropriatelyomitted.

In the semiconductor package 1000, transparent seal resin 931 is formedon the surface of the chip 810, and a glass substrate 932 is stacked onthe seal resin 931. Thus, the chip 810 is protected from an externalenvironment.

Further, a pad opening portion 802, a groove 811-1, a groove 811-2, anda groove 815 are also filled with the seal resin 931. Furthermore, thechip edge of a scribe region A3 is also filled with the seal resin 931.

As the pad opening portion 802, the groove 811-1, the groove 811-2, andthe groove 815 are filled with the seal resin 931, for example, whenexternal force is applied to the semiconductor package 930, the portionsfilled with the seal resin 931 can be expected to undertake a shockabsorber, and thus tolerance to external pressure or the like can beimproved.

Further, as the scribe region A3 is also filled with the seal resin 931,force applied to a film interface at the time of dicing can bemitigated, and a possibility that film peeling or a crack will occur atthe time of dicing can be reduced. Furthermore, since film peeling or acrack does not occur, the moisture-proof performance of the chip can beimproved.

Further, when moisture intrudes into the seal resin 931, a component ofan adhesive included in the seal resin 931 is likely to melt into theintruded moisture, and thus the quality of the chip 810 may deteriorate.However, since intrusion of moisture into the surface of a photodiode 74and a color filter layer 77 of the chip 810 is prevented by thefunctions of passivation films 801, 812, and 816 as described above,deterioration in the quality of the chip 810 is prevented.

Further, since there are the stacked film interfaces in the pad openingportion 802 and the chip edge, moisture or the like is more likely tointrude into the pad opening portion 802 and the chip edge than thesurface of the chip. As the groove and the hydrophobic film are formedin the pad opening portion 802 and the chip edge, and the stacked filminterface is covered with the hydrophobic film, intrusion of moisture orimpurities into the chip can be prevented.

Further, as the hydrophobic film is formed in the sidewall portion (thescribe region A3), force applied to each film interface at the time ofdicing can be expected to be mitigated, and a possibility that filmpeeling or a crack will occur can be reduced.

Further, even when film peeling or a crack occurs, as the groove isformed, the occurrence of film peeling or a crack can be prevented bythe groove, and a pad region A2 can be prevented from being influenced.

It is possible to reduce a possibility that film peeling or a crack willoccur and reduce influence even when film peeling or a crack occurs, andthus the moisture-proof performance of the chip can be further improved.

(7-31)-St Embodiment

FIG. 95 is a cross-sectional view schematically illustrating anexemplary configuration of a semiconductor package 1010 obtained bypackaging the chip 820 illustrated in FIG. 77 by the CSP technique. InFIG. 95, parts corresponding to those of FIG. 77 are denoted by the samereference numerals, and a description thereof will be appropriatelyomitted.

In the semiconductor package 1010, transparent seal resin 931 is formedon the surface of the chip 820, and a glass substrate 932 is stacked onthe seal resin 931. Thus, the chip 820 is protected from an externalenvironment.

A pad opening portion 802 is filled with the seal resin 931. In otherwords, the inside surrounded by a hydrophobic film 823 formed in theporous wall portion is filled with the seal resin 931. Further, ahydrophobic film 825 formed in the sidewall portion is also covered withthe seal resin 931.

As the pad opening portion 802 is filled with the seal resin 931, forexample, when external force is applied to the semiconductor package1010, the portion filled with the seal resin 931 can be expected toundertake a shock absorber, and thus tolerance to external pressure orthe like can be improved.

Further, as the hydrophobic film 825 formed in the sidewall portion anda microlens layer 79 are covered with the seal resin 931, force appliedto a film interface at the time of dicing can be mitigated, and apossibility that film peeling or a crack will occur at the time ofdicing can be reduced. Furthermore, since film peeling or a crack doesnot occur, the moisture-proof performance of the chip can be improved.

Further, when moisture intrudes into the seal resin 931, a component ofan adhesive included in the seal resin 931 is likely to melt into theintruded moisture, and thus the quality of the chip 820 may deteriorate.However, since intrusion of moisture into the surface of a photodiode 74of the chip 820 is prevented by the functions of passivation films 821,822, and 824 as described above, deterioration in the quality of thechip 820 can be prevented.

Further, since there are the stacked film interfaces in the portion inwhich the pad opening portion is formed and the chip edge, moisture orthe like is more likely to intrude to the portion in which the padopening portion is formed and the chip edge than the surface of thechip. As the hydrophobic film as well as the passivation film is formedin the portions to cover the stacked film interface, even when moistureintrudes into the seal resin 931, since intrusion of moisture into thesurface of the photodiode 74 of the chip 820 is prevented, deteriorationin the quality of the chip 820 can be prevented.

(7-32)-Nd Embodiment

FIG. 96 is a cross-sectional view schematically illustrating anexemplary configuration of a semiconductor package 1020 obtained bypackaging the chip 830 illustrated in FIG. 78 by the CSP technique. InFIG. 96, parts corresponding to those of FIG. 78 are denoted by the samereference numerals, and a description thereof will be appropriatelyomitted.

In the semiconductor package 1020, transparent seal resin 931 is formedon the surface of the chip 830, and a glass substrate 932 is stacked onthe seal resin 931. Thus, the chip 830 is protected from an externalenvironment.

Further, a pad opening portion 802, a groove 831-1, a groove 831-2, anda groove 835 are also filled with the seal resin 931. Furthermore, thechip edge of a scribe region A3 is also filled with the seal resin 931.

As the pad opening portion 802, the groove 831-1, the groove 831-2, andthe groove 835 are filled with the seal resin 931, for example, whenexternal force is applied to the semiconductor package 1020, theportions filled with the seal resin 931 can be expected to undertake ashock absorber, and thus tolerance to external pressure or the like canbe improved.

Further, as the scribe region A3 is also filled with the seal resin 931,force applied to a film interface at the time of dicing can bemitigated, and a possibility that film peeling or a crack will occur atthe time of dicing can be reduced. Furthermore, since film peeling or acrack does not occur, the moisture-proof performance of the chip can beimproved.

Further, when moisture intrudes into the seal resin 931, a component ofan adhesive included in the seal resin 931 is likely to melt into theintruded moisture, and thus the quality of the chip 830 may deteriorate.However, since intrusion of moisture into the surface of a photodiode 74and a color filter layer 77 of the chip 830 is prevented by thefunctions of passivation films 821, 832, and 836 as described above,deterioration in the quality of the chip 830 is prevented.

Since there is a stacked film interface on the pad opening portion 802and the chip edge, moisture is more likely to intrude into the padopening portion 802 and the chip edge than the surface of the chip. Asthe groove and the hydrophobic film are formed in the pad openingportion 802 and the chip edge, and the stacked film interface is coveredwith the hydrophobic film, intrusion of moisture or impurities into thechip can be prevented.

Further, as the hydrophobic film is formed in the sidewall portion (thescribe region A3), force applied to each film interface at the time ofdicing can be expected to be mitigated, and a possibility that filmpeeling or a crack will occur can be reduced.

Further, even when film peeling or a crack occurs, as the groove isformed, the occurrence of film peeling or a crack can be prevented bythe groove, and the pad region A2 can be prevented from beinginfluenced.

It is possible to reduce a possibility that film peeling or a crack willoccur and reduce influence even when film peeling or a crack occurs, andthus the moisture-proof performance of the chip can be further improved.

(7-33)-Rd Embodiment

FIG. 97 is a cross-sectional view schematically illustrating anexemplary configuration of a semiconductor package 1030 obtained bypackaging the chip 840 illustrated in FIG. 79 by the CSP technique. InFIG. 97, parts corresponding to those of FIG. 79 are denoted by the samereference numerals, and a description thereof will be appropriatelyomitted.

In the semiconductor package 1030, transparent seal resin 931 is formedon the surface of the chip 840, and a glass substrate 932 is stacked onthe seal resin 931. Thus, the chip 840 is protected from an externalenvironment.

A pad opening portion 842 is filled with the seal resin 931. In otherwords, the inside surrounded by a hydrophobic film 844 formed in theporous wall portion is filled with the seal resin 931. Further, ahydrophobic film 846 formed in the sidewall portion is also covered withthe seal resin 931.

As the pad opening portion 842 is filled with the seal resin 931, forexample, when external force is applied to the semiconductor package1030, the portion filled with the seal resin 931 can be expected toundertake a shock absorber, and thus tolerance to external pressure orthe like can be improved.

Further, as the hydrophobic film 846 formed in the sidewall portion, aplanarization film 75, and a microlens layer 79 are covered with theseal resin 931, force applied to a film interface at the time of dicingcan be mitigated, and a possibility that film peeling or a crack willoccur at the time of dicing can be reduced. Furthermore, since filmpeeling or a crack does not occur, the moisture-proof performance of thechip can be improved.

Further, when moisture intrudes into the seal resin 931, a component ofan adhesive included in the seal resin 931 is likely to melt into theintruded moisture, and thus the quality of the chip 840 may deteriorate.However, since intrusion of moisture into the surface of a photodiode 74of the chip 840 is prevented by the functions of passivation films 841,843, and 845 as described above, deterioration in the quality of thechip 840 can be prevented.

Further, since there are the stacked film interfaces in the portion inwhich the pad opening portion is formed and the chip edge, moisture orthe like is more likely to intrude to the portion in which the padopening portion is formed and the chip edge than the surface of thechip. As the hydrophobic film as well as the passivation film is formedin the portions to cover the stacked film interface, even when moistureintrudes into the seal resin 931, since intrusion of moisture into thesurface of the photodiode 74 of the chip 840 is prevented, deteriorationin the quality of the chip 840 can be prevented.

(7-34)-Th Embodiment

FIG. 98 is a cross-sectional view schematically illustrating anexemplary configuration of a semiconductor package 1040 obtained bypackaging the chip 850 illustrated in FIG. 80 by the CSP technique. InFIG. 98, parts corresponding to those of FIG. 80 are denoted by the samereference numerals, and a description thereof will be appropriatelyomitted.

In the semiconductor package 1040, transparent seal resin 931 is formedon the surface of the chip 850, and a glass substrate 932 is stacked onthe seal resin 931. Thus, the chip 850 is protected from an externalenvironment.

Further, a pad opening portion 842, a groove 851-1, a groove 851-2, anda groove 855 are also filled with the seal resin 931. Furthermore, thechip edge of a scribe region A3 is also filled with the seal resin 931.

As the pad opening portion 842, the groove 851-1, the groove 851-2, andthe groove 855 are filled with the seal resin 931, for example, whenexternal force is applied to the semiconductor package 1040, theportions filled with the seal resin 931 can be expected to undertake ashock absorber, and thus tolerance to external pressure or the like canbe improved.

Further, as the scribe region A3 is also filled with the seal resin 931,force applied to a film interface at the time of dicing can bemitigated, and a possibility that film peeling or a crack will occur atthe time of dicing can be reduced. Furthermore, since film peeling or acrack does not occur, the moisture-proof performance of the chip can beimproved.

Further, when moisture intrudes into the seal resin 931, a component ofan adhesive included in the seal resin 931 is likely to melt into theintruded moisture, and thus the quality of the chip 850 may deteriorate.However, since intrusion of moisture into the surface of a photodiode 74of the chip 850 is prevented by the functions of passivation films 821,852, and 856 as described above, deterioration in the quality of thechip 850 is prevented.

Since there is a stacked film interface on the pad opening portion 842and the chip edge, moisture is more likely to intrude into the padopening portion 842 and the chip edge than the surface of the chip. Asthe groove and the hydrophobic film are formed in the pad openingportion 842 and the chip edge, and the stacked film interface is coveredwith the hydrophobic film, intrusion of moisture or impurities into thechip can be prevented.

Further, as the hydrophobic film is formed in the sidewall portion (thescribe region A3), force applied to each film interface at the time ofdicing can be expected to be mitigated, and a possibility that filmpeeling or a crack will occur can be reduced.

Further, even when film peeling or a crack occurs, as the groove isformed, the occurrence of film peeling or a crack can be prevented bythe groove, and a pad region A2 can be prevented from being influenced.

It is possible to reduce a possibility that film peeling or a crack willoccur and reduce influence even when film peeling or a crack occurs, andthus the moisture-proof performance of the chip can be further improved.

(7-35)-Th Embodiment

FIG. 99 is a cross-sectional view schematically illustrating anexemplary configuration of a semiconductor package 1050 obtained bypackaging the chip 860 illustrated in FIG. 81 by the CSP technique. InFIG. 99, parts corresponding to those of FIG. 81 are denoted by the samereference numerals, and a description thereof will be appropriatelyomitted.

In the semiconductor package 1050, transparent seal resin 931 is formedon the surface of the chip 860, and a glass substrate 932 is stacked onthe seal resin 931. Thus, the chip 860 is protected from an externalenvironment.

A pad opening portion 869 is filled with the seal resin 931. In otherwords, the inside surrounded by a hydrophobic film 872 formed in theporous wall portion is filled with the seal resin 931. Further, ahydrophobic film 874 formed in the sidewall portion is also covered withthe seal resin 931.

As the pad opening portion 869 is filled with the seal resin 931, forexample, when external force is applied to the semiconductor package1050, the portion filled with the seal resin 931 can be expected toundertake a shock absorber, and thus tolerance to external pressure orthe like can be improved.

Further, as the hydrophobic film 874 formed in the sidewall portionscovered with the seal resin 931, force applied to a film interface atthe time of dicing can be mitigated, and a possibility that film peelingor a crack will occur at the time of dicing can be reduced. Furthermore,since film peeling or a crack does not occur, the moisture-proofperformance of the chip can be improved.

Further, when moisture intrudes into the seal resin 931, a component ofan adhesive included in the seal resin 931 is likely to melt into theintruded moisture, and thus the quality of the chip 860 may deteriorate.However, since intrusion of moisture into the surface of a photodiode862 of the chip 860 is prevented by the functions of microlenspassivation films 868, 871, and 873 as described above, deterioration inthe quality of the chip 860 can be prevented.

Further, since there are the stacked film interfaces in the portion inwhich the pad opening portion is formed and the chip edge, moisture orthe like is more likely to intrude to the portion in which the padopening portion is formed and the chip edge than the surface of thechip. As the hydrophobic film as well as the passivation film is formedin the portions to cover the stacked film interface, even when moistureintrudes into the seal resin 931, since intrusion of moisture into thesurface of the photodiode 862 of the chip 860 is prevented,deterioration in the quality of the chip 860 can be prevented.

(7-36)-Th Embodiment

FIG. 100 is a cross-sectional view schematically illustrating anexemplary configuration of a semiconductor package 1060 obtained bypackaging the chip 880 illustrated in FIG. 82 by the CSP technique. InFIG. 100, parts corresponding to those of FIG. 82 are denoted by thesame reference numerals, and a description thereof will be appropriatelyomitted.

In the semiconductor package 1060, transparent seal resin 931 is formedon the surface of the chip 880, and a glass substrate 932 is stacked onthe seal resin 931. Thus, the chip 880 is protected from an externalenvironment.

Further, a pad opening portion 869, a groove 881-1, a groove 881-2, anda groove 884 are also filled with the seal resin 931. Furthermore, thechip edge of a scribe region A3 is also filled with the seal resin 931.

As the pad opening portion 869, the groove 881-1, the groove 881-2, andthe groove 884 are filled with the seal resin 931, for example, whenexternal force is applied to the semiconductor package 1060, theportions filled with the seal resin 931 can be expected to undertake ashock absorber, and thus tolerance to external pressure or the like canbe improved.

Further, as the scribe region A3 is also filled with the seal resin 931,force applied to a film interface at the time of dicing can bemitigated, and a possibility that film peeling or a crack will occur atthe time of dicing can be reduced. Furthermore, since film peeling or acrack does not occur, the moisture-proof performance of the chip can beimproved.

Further, when moisture intrudes into the seal resin 931, a component ofan adhesive included in the seal resin 931 is likely to melt into theintruded moisture, and thus the quality of the chip 880 may deteriorate.However, since intrusion of moisture into the surface of a photodiode862 of the chip 880 is prevented by the functions of microlenspassivation films 868, 882, and 885 as described above, deterioration inthe quality of the chip 880 is prevented.

Since there is a stacked film interface on the pad opening portion 842and the chip edge, moisture is more likely to intrude into the padopening portion 842 and the chip edge than the surface of the chip. Asthe groove and the hydrophobic film are formed in the pad openingportion 842 and the chip edge, and the stacked film interface is coveredwith the hydrophobic film, intrusion of moisture or impurities into thechip can be prevented.

Further, as the hydrophobic film is formed in the sidewall portion (thescribe region A3), force applied to each film interface at the time ofdicing can be expected to be mitigated, and a possibility that filmpeeling or a crack will occur can be reduced.

Further, even when film peeling or a crack occurs, as the groove isformed, the occurrence of film peeling or a crack can be prevented bythe groove, and a pad region A2 can be prevented from being influenced.

It is possible to reduce a possibility that film peeling or a crack willoccur and reduce influence even when film peeling or a crack occurs, andthus the moisture-proof performance of the chip can be further improved.

(7-37)-Th Embodiment

FIG. 101 is a cross-sectional view schematically illustrating anexemplary configuration of a semiconductor package 1070 obtained bypackaging the chip 890 illustrated in FIG. 83 by the CSP technique. InFIG. 101, parts corresponding to those of FIG. 83 are denoted by thesame reference numerals, and a description thereof will be appropriatelyomitted.

In the semiconductor package 1070, transparent seal resin 931 is formedon the surface of the chip 890, and a glass substrate 932 is stacked onthe seal resin 931. Thus, the chip 890 is protected from an externalenvironment.

A pad opening portion 869 is filled with the seal resin 931. In otherwords, the inside surrounded by a hydrophobic film 892 formed in theporous wall portion is filled with the seal resin 931. Further, ahydrophobic film 894 formed in the sidewall portion is also covered withthe seal resin 931.

As the pad opening portion 869 is filled with the seal resin 931, forexample, when external force is applied to the semiconductor package1070, the portion filled with the seal resin 931 can be expected toundertake a shock absorber, and thus tolerance to external pressure orthe like can be improved.

Further, as the hydrophobic film 894 formed in the sidewall portion iscovered with the seal resin 931, force applied to a film interface atthe time of dicing can be mitigated, and a possibility that film peelingor a crack will occur at the time of dicing can be reduced. Furthermore,since film peeling or a crack does not occur, the moisture-proofperformance of the chip can be improved.

Further, when moisture intrudes into the seal resin 931, a component ofan adhesive included in the seal resin 931 is likely to melt into theintruded moisture, and thus the quality of the chip 890 may deteriorate.However, since intrusion of moisture into the surface of a photodiode862 of the chip 890 is prevented by the functions of microlenspassivation film 868, 891, and 893 as described above, deterioration inthe quality of the chip 890 can be prevented.

Further, since there are the stacked film interfaces in the portion inwhich the pad opening portion is formed and the chip edge, moisture orthe like is more likely to intrude to the portion in which the padopening portion is formed and the chip edge than the surface of thechip. As the hydrophobic film as well as the passivation film is formedin the portions to cover the stacked film interface, even when moistureintrudes into the seal resin 931, since intrusion of moisture into thesurface of the photodiode 862 of the chip 890 is prevented,deterioration in the quality of the chip 890 can be prevented.

(7-38)-Th Embodiment

FIG. 102 is a cross-sectional view schematically illustrating anexemplary configuration of a semiconductor package 1080 obtained bypackaging the chip 900 illustrated in FIG. 84 by the CSP technique. InFIG. 102, parts corresponding to those of FIG. 84 are denoted by thesame reference numerals, and a description thereof will be appropriatelyomitted.

In the semiconductor package 1080, transparent seal resin 931 is formedon the surface of the chip 900, and a glass substrate 932 is stacked onthe seal resin 931. Thus, the chip 900 is protected from an externalenvironment.

Further, a pad opening portion 869, a groove 901-1, a groove 901-2, anda groove 904 are also filled with the seal resin 931. Furthermore, thechip edge of a scribe region A3 is also filled with the seal resin 931.

As the pad opening portion 869, the groove 901-1, the groove 901-2, andthe groove 904 are filled with the seal resin 931, for example, whenexternal force is applied to the semiconductor package 1080, theportions filled with the seal resin 931 can be expected to undertake ashock absorber, and thus tolerance to external pressure or the like canbe improved.

Further, as the scribe region A3 is also filled with the seal resin 931,force applied to a film interface at the time of dicing can bemitigated, and a possibility that film peeling or a crack will occur atthe time of dicing can be reduced. Furthermore, since film peeling or acrack does not occur, the moisture-proof performance of the chip can beimproved.

Further, when moisture intrudes into the seal resin 931, a component ofan adhesive included in the seal resin 931 is likely to melt into theintruded moisture, and thus the quality of the chip 900 may deteriorate.However, since intrusion of moisture into the surface of a photodiode862 of the chip 900 is prevented by the functions of microlenspassivation films 868, 902, and 905 as described above, deterioration inthe quality of the chip 900 is prevented.

Since there is a stacked film interface on the pad opening portion 869and the chip edge, moisture is more likely to intrude into the padopening portion 869 and the chip edge than the surface of the chip. Asthe groove and the hydrophobic film are formed in the pad openingportion 869 and the chip edge, and the stacked film interface is coveredwith the hydrophobic film, intrusion of moisture or impurities into thechip can be prevented.

Further, as the hydrophobic film is formed in the sidewall portion (thescribe region A3), force applied to each film interface at the time ofdicing can be expected to be mitigated, and a possibility that filmpeeling or a crack will occur can be reduced.

Further, even when film peeling or a crack occurs, as the groove isformed, the occurrence of film peeling or a crack can be prevented bythe groove, and a pad region A2 can be prevented from being influenced.

It is possible to reduce a possibility that film peeling or a crack willoccur and reduce influence even when film peeling or a crack occurs, andthus the moisture-proof performance of the chip can be further improved.

(7-39)-Th Embodiment

FIG. 103 is a cross-sectional view schematically illustrating anexemplary configuration of a semiconductor package 1090 obtained bypackaging the chip 910 illustrated in FIG. 85 by the CSP technique. InFIG. 103, parts corresponding to those of FIG. 85 are denoted by thesame reference numerals, and a description thereof will be appropriatelyomitted.

In the semiconductor package 1090, transparent seal resin 931 is formedon the surface of the chip 910, and a glass substrate 932 is stacked onthe seal resin 931. Thus, the chip 910 is protected from an externalenvironment.

The pad opening portion 913 is filled with the seal resin 931. In otherwords, the inside surrounded by a hydrophobic film 914 formed in theporous wall portion is filled with the seal resin 931. Further, ahydrophobic film 916 formed in the sidewall portion is also covered withthe seal resin 931.

As the pad opening portion 913 is filled with the seal resin 931, forexample, when external force is applied to the semiconductor package1090, the portion filled with the seal resin 931 can be expected toundertake a shock absorber, and thus tolerance to external pressure orthe like can be improved.

As the hydrophobic film 916 formed in the sidewall portion and amicrolens layer 911 are filled with the seal resin 931, force applied toa film interface at the time of dicing can be mitigated, and apossibility that film peeling or a crack will occur at the time ofdicing can be reduced. Furthermore, since film peeling or a crack doesnot occur, the moisture-proof performance of the chip can be improved.

Further, when moisture intrudes into the seal resin 931, a component ofan adhesive included in the seal resin 931 is likely to melt into theintruded moisture, and thus the quality of the chip 910 may deteriorate.However, since intrusion of moisture into the surface of a photodiode862 of the chip 910 is prevented by the functions of passivation films912 and 915 as described above, deterioration in the quality of the chip910 can be prevented.

Further, since there are the stacked film interfaces in the portion inwhich the pad opening portion is formed and the chip edge, moisture orthe like is more likely to intrude to the portion in which the padopening portion is formed and the chip edge than the surface of thechip. As the hydrophobic film as well as the passivation film is formedin the portions to cover the stacked film interface, even when moistureintrudes into the seal resin 931, since intrusion of moisture into thesurface of the photodiode 862 of the chip 910 is prevented,deterioration in the quality of the chip 910 can be prevented.

(7-40)-Th Embodiment

FIG. 104 is a cross-sectional view schematically illustrating anexemplary configuration of a semiconductor package 1100 obtained bypackaging the chip 920 illustrated in FIG. 86 by the CSP technique. InFIG. 104, parts corresponding to those of FIG. 86 are denoted by thesame reference numerals, and a description thereof will be appropriatelyomitted.

In the semiconductor package 1100, transparent seal resin 931 is formedon the surface of the chip 920, and a glass substrate 932 is stacked onthe seal resin 931. Thus, the chip 920 is protected from an externalenvironment.

Further, a pad opening portion 913 and a groove 921 are also filled withthe seal resin 931. Furthermore, the chip edge of a scribe region A3 isalso filled with the seal resin 931.

As the pad opening portion 913 and the groove 921 are filled with theseal resin 931, for example, when external force is applied to thesemiconductor package 1100, the portions filled with the seal resin 931can be expected to undertake a shock absorber, and thus tolerance toexternal pressure or the like can be improved.

Further, as the scribe region A3 is also filled with the seal resin 931,force applied to a film interface at the time of dicing can bemitigated, and a possibility that film peeling or a crack will occur atthe time of dicing can be reduced. Furthermore, since film peeling or acrack does not occur, the moisture-proof performance of the chip can beimproved.

Further, when moisture intrudes into the seal resin 931, a component ofan adhesive included in the seal resin 931 is likely to melt into theintruded moisture, and thus the quality of the chip 920 may deteriorate.However, since intrusion of moisture into the surface of a photodiode862 of the chip 920 is prevented by the functions of passivation films912 and 922 as described above, deterioration in the quality of the chip920 is prevented.

Since there is a stacked film interface on the pad opening portion 913and the chip edge, moisture is more likely to intrude into the padopening portion 913 and the chip edge than the surface of the chip. Asthe groove and the hydrophobic film are formed in the pad openingportion 913 and the chip edge, and the stacked film interface is coveredwith the hydrophobic film, intrusion of moisture or impurities into thechip can be prevented.

Further, as the hydrophobic film is formed in the sidewall portion (thescribe region A3), force applied to each film interface at the time ofdicing can be expected to be mitigated, and a possibility that filmpeeling or a crack will occur can be reduced.

Further, even when film peeling or a crack occurs, as the groove isformed, the occurrence of film peeling or a crack can be prevented bythe groove, and a pad region A2 can be prevented from being influenced.

It is possible to reduce a possibility that film peeling or a crack willoccur and reduce influence even when film peeling or a crack occurs, andthus the moisture-proof performance of the chip can be further improved.

Eighth Embodiment

FIG. 105 illustrates a configuration of a chip according to an eighthembodiment. FIG. 105 illustrates a wafer that includes a plurality ofchips (3 chips in FIG. 105) and is not diced yet, similarly to FIG. 2.

Here, a chip positioned at the center is referred to as a “chip 1300-1,”a chip positioned at the left is referred to as a “chip 1300-2,” and achip positioned at the right is referred to as a “chip 1300-3.” In thefollowing description, when the chips 1300-1 to 1300-3 need not bedistinguished from one another, the chips are referred to as simply a“chip 1300.”

Each chip 1300 has the same configuration as the chip 70 described abovewith reference to FIGS. 2 and 3. In other words, the chip 1300 isconfigured such that an interconnection layer 72 is arranged on asupport substrate 71, and a silicon substrate 73 is arranged on theinterconnection layer 72. In the silicon substrate 73, a plurality ofphotodiodes 74 (optical elements) serving as photoelectric conversionunits of pixels are formed at certain intervals.

The planarization film 75 is formed on the silicon substrate 73, and alight shielding film 76 for preventing light from leaking into aneighboring pixel is formed in the planarization film 75 correspondingto a position between the adjacent photodiodes 74. A color filter layer77 is formed on the planarization film 75. A planarization film 78 isformed on the color filter layer 77. A microlens layer 79 is formed onthe planarization film 78. A cover glass 81 is bonded onto the microlenslayer 79 through an adhesive layer 80.

A solder resist 1312 and a connection terminal 1313 for a connectionwith an external circuit are formed below the support substrate 71.Further, a through electrode such as a through silicon via (TSV) isformed, but illustration thereof is omitted in FIG. 105.

In the wafer illustrated in FIG. 105, a groove 1311 is formed betweenthe chips 1300. The groove 1311-1 is formed between the chip 1300-1 andthe chip 1300-2, and the groove 1311-2 is formed between the chip 1300-1and the chip 1300-3.

There is a scribe section 91-1 between the chip 1300-1 and the chip1300-2, and the groove 1311-1 is formed in the scribe section 91-1.Similarly, there is a scribe section 91-2 between the chip 1300-1 andthe chip 1300-3, and the groove 1311-2 is formed in the scribe section91-2.

In the chip 1300 illustrated in FIG. 105, the groove 1311 is formed suchthat the cover glass 81, the adhesive layer 80, the microlens layer 79,the planarization film 78, the color filter layer 77, the planarizationfilm 75, the silicon substrate 73, the interconnection layer 72, and thesupport substrate 71 are excavated.

The groove 1311 is filled with an adhesive layer 1314 formed of the samematerial as the adhesive layer 80. When resin is used as an adhesive ofthe adhesive layer 80, the groove 1311 is filled with resin as well.

The adhesive layer 1314-1 extending from the adhesive layer 80 is formedon the side surfaces of the microlens layer 79, the planarization film78, the color filter layer 77, the planarization film 75, the siliconsubstrate 73, the interconnection layer 72, and the support substrate 71at the chip 1300-1 side and the chip 1300-2 side of the groove 1311-1.

The adhesive layer 1314-2 extending from the adhesive layer 80 is formedon the side surfaces of the microlens layer 79, the planarization film78, the color filter layer 77, the planarization film 75, the siliconsubstrate 73, the interconnection layer 72, and the support substrate 71at the chip 1300-1 side and the chip 1300-3 side of the groove 1311-2.As described above, when the adhesive layer 80 is formed in thehorizontal direction, the adhesive layer 1314 is formed in the verticaldirection.

When the wafer in which the groove 1311 is formed between the chips 1300is diced along the scribe section 91, the chip 1300-1 illustrated inFIG. 106 is cut out. In the chip 1300-1 illustrated in FIG. 106, thecross-sectional surfaces of the microlens layer 79, the planarizationfilm 78, the color filter layer 77, the planarization film 75, thesilicon substrate 73, the interconnection layer 72, and the supportsubstrate 71 are covered with the film in which the adhesive layer 1314is stacked and thus not exposed on the surface.

As described above, the diced chip 1300-1 has a structure in which thestacked layers of the chip 1300-1 are covered with the adhesive layer1314-1 formed in the groove 1311-1′ (a dash is added to the groove afterdicing in order to be distinguished from the groove 1311-1 before dicingillustrated in FIG. 105).

Further, the diced chip 1300-1 has a structure in which the stackedlayers of the chip 1300-1 are covered with the adhesive layer 1314-2formed in the groove 1311-2′.

As described above, both ends of the chip 1300-1 are covered with theadhesive layer 1314. Thus, it is possible to prevent moisture fromintruding into the chip 1300-1 from the side of the chip 1300-1.

Further, the solder resist 1312-1 is formed below the chip 1300-1, andthus it is possible to prevent moisture from intruding into the chip1300-1 from the bottom. Instead of the solder resist 1312-1, an oxidefilm may be used, or an oxide film may be further stacked on the solderresist 1312-1.

Since the diced chip 1300-1 is configured such that the groove 1311-1′and the groove 1311-2′ remain as described above, a width of the groove1311-1 and the groove 1311-2 between the chips 1300 before dicing ispreferably larger than a width of a blade used in the dicing process.

As the groove 1311 is formed, and the adhesive layer 1314 is formed inthe groove 1311 as described above, the moisture-proof performance canbe further improved.

<Manufacturing of Chip According to Eighth Embodiment>

A process of manufacturing a chip (wafer) having such a groove will bedescribed. FIG. 107 is a diagram for describing a process ofmanufacturing a chip prior to dicing.

The manufacturing process described with reference to FIG. 107 willfocus on manufacturing of a groove serving as one of characteristiccomponents of the present technology, and a manufacturing method of arelated art can be applied to manufacturing of other parts such asforming of layers, and thus a description thereof will be appropriatelyomitted.

In step S1311, a semiconductor wafer in which a photodiode 74 and thelike are formed is prepared. The semiconductor wafer is configured suchthat a support substrate 71, an interconnection layer 72, a siliconsubstrate 73, a planarization film 75, a color filter layer 77, aplanarization film 78, and a microlens layer 79 are stacked, thephotodiode 74 is formed in the silicon substrate 73, and the lightshielding film 76 is formed in the planarization film 75.

In step S1311, a groove 1311-1 and a groove 1311-2 are formed in thesemiconductor wafer. The groove 1311 is formed in the scribe section 91as described above. For example, the groove 1311 is formed by performingdry etching after patterning. Alternatively, the groove 1311 may beformed by wet etching or a technique same as dicing.

The formed groove 1311 is formed to have a width w′ larger than a widthof a blade used in the dicing process. Further, the formed groove 1311has a depth h′ exposing the adhesive layer 1314 filling the groove 1311when the support substrate 71 is thinned in a subsequent process.

In step S1312, an adhesive layer 80 is formed. When the adhesive layer80 is formed, the groove 1311 is also filled with the same material as amaterial for forming the adhesive layer 80, for example, resin. Thematerial filling the groove 1311 is the adhesive layer 1314. Theadhesive layer 80 is formed using a technique such as a coatingtechnique or a lamination technique.

In step S1313, the semiconductor wafer is bonded to the cover glass 81.When the bonding is performed, in order to prevent bubbles from cominginto the bonding surface, a vacuum bonding machine is preferably used.Further, since the bonding is performed in a wafer level, there is nobig influence, and a chip size package (CSP) process which will bedescribed later is not influenced.

In step S1314, the support substrate 71 is thinned. The thinning of thesupport substrate 71 is performed up to the bottom portion of theadhesive layer 1314 (a front end of the convex portion of the adhesivelayer 1314) such that the bottom surface of the support substrate 71 ison the same plane as the bottom surface of the adhesive layer 1314.

In step S1315, a CSP process is performed. In order to open aninterconnection portion of a multi-layer interconnection (notillustrated) formed in the semiconductor wafer surface, a through holeis formed by etching, an insulating film such as a silicon oxide film isformed, the insulating film in the through hole is etched and opened, athrough electrode is formed in the through hole, for example, by Cuplating, and an interconnection is formed on a surface (a back surface)of a side opposite to a translucent substrate of the semiconductorwafer.

In step S1316, dicing is performed along the scribe section 91, and thusthe chip is diced.

As the groove 1311 is formed, and the adhesive layer 1314 is formed inthe groove 1311 as described above, the moisture-proof performance canbe further improved.

Further, as the groove 1311 is formed, the adhesive layer 1314 isstacked in the groove 1311, and dicing is performed along the adhesivelayer 1314, force applied to an interface between films at the time ofdicing can be mitigated, and a possibility that film peeling or a crackwill occur can be reduced.

Since a possibility that film peeling or a crack will occur can bereduced, the moisture-proof performance of the chip can be furtherimproved.

The examples in which the present technology is applied to CMOS imagesensors have been described above, but, for example, the presenttechnology can be applied even to other types of solid state imagingdevices such as CCD image sensors.

Further, the examples in which the passivation film and the microlenspassivation film are formed of SiN have been described above, othertransparent materials that satisfy requirements such as electriccharacteristics, optical characteristics, and durability and have awaterproofing property can be used.

Further, the present technology can be applied even when a chip ispackaged by a method other than the CSP.

A chip may be configured such that the first embodiment to the seventhembodiment are combined.

<Electronic Device>

The present technology is not limited to the application to the imagingdevice, and can be applied to general electronic devices in which animaging device is used as an image acquiring unit (a photoelectricconversion unit) such as imaging devices such as digital still camerasor video cameras, mobile terminal devices with an imaging function suchas mobile telephones, and copy machines in which an imaging device isused as an image reading unit. Further, there are cases in which amodule-like configuration mounted in an electronic device, that is, acamera module is used as an imaging device.

FIG. 105 is a block diagram illustrating an exemplary configuration ofan imaging device serving as an exemplary electronic device of thepresent technology. An imaging device 2000 of the present technologyincludes an optical unit including a lens group 2001, a solid-stateimage sensor 2002, a DSP circuit 2003 serving as a camera signalprocessing unit, a frame memory 2004, a display unit 2005, a recordingunit 2006, an operating unit 2007, a power source unit 2008, and thelike as illustrated in FIG. 105.

The DSP circuit 2003, the frame memory 2004, the display unit 2005, therecording unit 2006, the operating unit 2007, and the power source unit2008 are connected with one another via a bus line 2009.

The lens group 2001 receives incident light (image light) from asubject, and forms an image on an imaging plane of the solid-state imagesensor 2002. The solid-state image sensor 2002 converts a quantity oflight of the incident light formed on the imaging plane by the lensgroup 2001 into an electric signal in units of pixels, and outputs theelectric signal as a pixel signal. The image sensors according to anyone of the above embodiments can be used as the solid-state image sensor2002.

The display unit 2005 includes a panel display device such as a liquidcrystal display (LCD) device or an organic electro luminescence (EL)display device, and displays a moving image or a still image imaged bythe solid-state image sensor 2002. The recording unit 2006 records themoving image or the still image imaged by the solid-state image sensor2002 on a recording medium such as a digital versatile disk (DVD).

The operating unit 2007 issues an operation command on various functionsof the present imaging device according to an operation performed by theuser. The power source unit 2008 appropriately supplies various kinds ofpower serving as operation power of the DSP circuit 2003, the framememory 2004, the display unit 2005, the recording unit 2006, and theoperating unit 2007 to the supply targets.

The imaging device 2000 is applied to cameral modules for video cameras,digital still cameras, and mobile devices such as mobile telephones. Inthe imaging device 2000, the solid-state image sensor according to anyone of the above embodiments can be used as the solid-state image sensor2002.

The effects described in this specification are just examples and notlimited, and any other effect may be obtained.

Further, an embodiment of the present technology is not limited to theabove embodiments, and various changes can be made within the scope notdeparting from the gist of the present technology.

The present technology may have the following configurations.

(1)

An image sensor, including:

-   -   a substrate; a plurality of layers stacked on the substrate; the        plurality of layers including a photodiode layer having a        plurality of photodiodes formed on a surface of the photodiode        layer; the plurality of layers including at least one layer        having a groove formed such that a portion of the at least one        layer is excavated; and a transparent resin layer formed above        the photodiode layer and formed in the groove.

(2)

-   -   The image sensor according to any of the above, where the groove        has a width that is larger than a scribing blade width.

(3)

-   -   The image sensor according to any of the above, where the groove        includes a portion of the photodiode layer such that the portion        of the photodiode layer is excavated.

(4)

-   -   The image sensor according to any of the above, where the groove        includes a portion of the substrate such that the portion of the        substrate is excavated.

(5)

-   -   The image sensor according to any of the above, further        including a passivation film formed in the groove.

(6)

-   -   The image sensor according to any of the above, further        including a microlens layer formed above the photodiode layer,        where the passivation film is formed on the microlens layer.

(7)

-   -   The image sensor according to any of the above, further        including a rib formed in the transparent resin layer.

(8)

-   -   The image sensor according to any of the above, further        including a passivation film formed in the groove and the rib.

(9)

-   -   The image sensor according to any of the above, further        including a first and a second through electrode, where the        first and the second through electrode each have a sidewall        protecting portion, and where the groove includes at least a        portion of the sidewall protecting portions.

(10)

-   -   The image sensor according to any of the above, further        including a material of the second through electrode that fills        the groove.

(11)

-   -   The image sensor according to any of the above, further        including: a transparent resin layer formed above the photodiode        layer; a transparent member formed on the transparent resin        layer; a moisture resistant film formed in the groove; where the        groove includes an excavated portion of the transparent member        layer.

(12)

-   -   The image sensor according to any of the above, further        including: a transparent resin layer formed above the photodiode        layer; and a transparent member formed on the transparent resin        layer; where the groove extends to a bottom surface of the        substrate, the transparent member covers a side surface of the        groove, and the transparent resin layer is formed between the        transparent member and a side surface of the substrate.

(13)

-   -   The image sensor according to any of the above, further        including a hydrophobic film formed in the groove.

(14)

An image sensor, including:

-   -   a plurality of layers that are stacked; the plurality of layers        including a photodiode layer having a plurality of photodiodes        formed on a surface of the photodiode layer;    -   a transparent resin layer formed above the photodiode layer; a        rib formed in the transparent resin layer; and    -   a moisture resistant film formed between a bottom surface of the        rib and the transparent resin.

(15)

-   -   The image sensor according to any of the above, further        including a transparent member formed on the transparent resin        layer, where the moisture resistant film is formed between the        transparent member and the transparent resin layer.

(16)

-   -   The image sensor according to any of the above, where the        moisture resistant film includes a plurality of films having        different refractive indices that are stacked.

(17)

-   -   The image sensor according to any of the above, where the rib is        a material absorbing certain light.

(18)

-   -   An imaging device including an image sensor and support        circuits, the image sensor including:    -   a substrate; a plurality of layers stacked on the substrate; the        plurality of layers including a photodiode layer having a        plurality of photodiodes formed on a surface of the photodiode        layer; the plurality of layers including at least one layer        having a groove formed such that a portion of the at least one        layer is excavated; and a transparent resin layer formed above        the photodiode layer and formed in the groove.

(19)

-   -   The imaging device according to any of the above, where the        groove has a width that is larger than a scribing blade width.

(20)

-   -   A method, including:    -   forming a plurality of layers stacked on a substrate, the        plurality of layers including a photodiode layer having a        plurality of photodiodes formed on a surface of the photodiode        layer; forming a groove in at least one layer in the plurality        of layers, the groove being formed such that the at least one        layer is excavated; and a transparent resin layer formed above        the photodiode layer and formed in the groove.

It should be understood by those skilled in the art that variousmodifications, combinations, sub-combinations and alterations may occurdepending on design requirements and other factors insofar as they arewithin the scope of the appended claims or the equivalents thereof.

REFERENCE SIGNS LIST

-   -   71 Support substrate    -   72 Interconnection layer    -   73 Silicon substrate    -   74 Photodiode    -   75 Planarization film    -   76 Light shielding film    -   77 Color filter layer    -   78 Planarization film    -   79 Microlens layer    -   80 Adhesive layer    -   81 Cover glass    -   100 Chip

What is claimed is:
 1. An image sensor, comprising: a substrate; aplurality of layers stacked on the substrate, the plurality of layersincluding: a photodiode layer including a plurality of photodiodesformed therein; and at least one layer having a groove formed thereinsuch that a portion of the at least one layer is excavated, wherein thegroove forms a pad opening portion; an adhesive layer formed above thephotodiode layer; a cover glass above the plurality of photodiodes andon the adhesive layer; and a hydrophobic film formed in the pad openingportion.
 2. The image sensor according to claim 1, wherein the adhesivelayer is formed above the groove in a planar view.
 3. The image sensoraccording to claim 1, wherein the plurality of layers further includesan interconnection layer disposed below the photodiode layer.
 4. Theimage sensor according to claim 1, further comprising a passivation filmformed in the groove.
 5. The image sensor according to claim 1, whereina passivation film covers an inner wall of the pad opening portion. 6.The image sensor according to claim 1, wherein the groove includes aportion of the photodiode layer such that the portion of the photodiodelayer is excavated.
 7. The image sensor according to claim 1, whereinthe adhesive layer is further formed in the groove.
 8. The image sensoraccording to claim 1, wherein the plurality of layers further includes aplanarization film formed above the photodiode layer; and the groove isformed such that a portion of the planarization film is excavated. 9.The image sensor according to claim 8, wherein the plurality of layersfurther includes a color filter layer formed above the planarizationfilm; and the groove is formed such that a portion of the color filterlayer is excavated.
 10. An image sensor, comprising: a substrate; aplurality of layers stacked on the substrate, the plurality of layersincluding: a photodiode layer including a plurality of photodiodesformed therein; and at least one layer having a groove formed thereinsuch that a portion of the at least one layer is excavated; an adhesivelayer formed above the photodiode layer; and a cover glass above theplurality of photodiodes and on the adhesive layer, wherein the grooveforms a pad opening portion, and wherein a passivation film comes intocontact with a top surface of an electrode pad formed at a bottom of thepad opening portion.
 11. The image sensor according to claim 10, whereinthe plurality of layers further includes an interconnection layerdisposed below the photodiode layer.
 12. The image sensor according toclaim 10, wherein the groove includes a portion of the photodiode layersuch that the portion of the photodiode layer is excavated.
 13. An imagesensor, comprising: a substrate; a plurality of layers stacked on thesubstrate, the plurality of layers including: a photodiode layerincluding a plurality of photodiodes formed therein; and at least onelayer having a groove formed therein such that a portion of the at leastone layer is excavated; an adhesive layer formed above the photodiodelayer; and a cover glass above the plurality of photodiodes and on theadhesive layer, wherein the plurality of layers further includes aninterconnection layer disposed below the photodiode layer, and whereinthe groove is formed such that a portion of the interconnection layer isexcavated.
 14. The image sensor according to claim 13, wherein theadhesive layer is formed above the groove in a planar view.
 15. Theimage sensor according to claim 13, further comprising a passivationfilm formed in the groove.
 16. The image sensor according to claim 13,wherein the groove forms a pad opening portion, and wherein apassivation film covers an inner wall of the pad opening portion. 17.The image sensor according to claim 13, wherein the groove includes aportion of the photodiode layer such that the portion of the photodiodelayer is excavated.
 18. The image sensor according to claim 13, whereinthe adhesive layer is further formed in the groove.
 19. The image sensoraccording to claim 13, wherein the plurality of layers further includesa planarization film formed above the photodiode layer; and the grooveis formed such that a portion of the planarization film is excavated.20. The image sensor according to claim 19, wherein the plurality oflayers further includes a color filter layer formed above theplanarization film; and the groove is formed such that a portion of thecolor filter layer is excavated.